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    TRANSISTOR C4881 Search Results

    TRANSISTOR C4881 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C4881 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		2SC4881 PDF

    transistor C4881

    Abstract: c4881
    Text: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		2SC4881 2-10R1A transistor C4881 c4881 PDF

    transistor C4881

    Abstract: c4881 2SC4881
    Text: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		2SC4881 transistor C4881 c4881 2SC4881 PDF

    c4881

    Abstract: transistor C4881 2SC4881
    Text: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 s (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		2SC4881 c4881 transistor C4881 2SC4881 PDF