TRANSISTOR C5706 3A Search Results

TRANSISTOR C5706 3A Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C5706 3A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
c5706 Abstract: Transistor C5706 c5706 transistor c5706 1a c5706 equivalent transistor c5706 equivalent Transistor C5706 3a BTC5706A3 C5706 3a C5706 I Text: CYStech Electronics Corp. Spec. No. : C819A3 Issued Date : 2006.06.06 Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation	Original	PDF	C819A3 BTC5706A3 UL94V-0 c5706 Transistor C5706 c5706 transistor c5706 1a c5706 equivalent transistor c5706 equivalent Transistor C5706 3a BTC5706A3 C5706 3a C5706 I

Catalog Datasheet

MFG & Type

PDF

Document Tags

c5706

Abstract: Transistor C5706 c5706 transistor c5706 1a c5706 equivalent transistor c5706 equivalent Transistor C5706 3a BTC5706A3 C5706 3a C5706 I
Text: CYStech Electronics Corp. Spec. No. : C819A3 Issued Date : 2006.06.06 Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation

Original

PDF

C819A3 BTC5706A3 UL94V-0 c5706 Transistor C5706 c5706 transistor c5706 1a c5706 equivalent transistor c5706 equivalent Transistor C5706 3a BTC5706A3 C5706 3a C5706 I