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    TRANSISTOR C607 Search Results

    TRANSISTOR C607 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C607 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D45H11

    Abstract: D45H11J3
    Text: Spec. No. : C607J3 Issued Date : 2005.07.11 Revised Date :2006.04.07 Page No. : 1/5 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics • Pb-free package


    Original     		PDF C607J3 D45H11J3 O-252 UL94V-0 D45H11 D45H11J3

    D45H11

    Abstract: D45H11J3 C607J3
    Text: Spec. No. : C607J3 Issued Date : 2005.07.11 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 BVCEO IC RCESAT -80V -8A 75mΩ Features • Low VCE sat • High BVCEO • Excellent current gain characteristics


    Original     		PDF C607J3 D45H11J3 O-252 UL94V-0 D45H11 D45H11J3 C607J3

    Untitled

    Abstract: No abstract text available
    Text: Spec. No. : C607J3-A Issued Date : 2006.06.07 Revised Date : Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955J3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage


    Original     		PDF C607J3-A BTP955J3 O-252 UL94V-0

    BTP955L3

    Abstract: No abstract text available
    Text: Spec. No. : C607L3 Issued Date : 2005.02.04 Revised Date : 2006.06.23 Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage


    Original     		PDF C607L3 BTP955L3 OT-223 UL94V-0 BTP955L3

    2SC6072

    Abstract: C6072
    Text: 2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz typ. Absolute Maximum Ratings (Tc = 25°C) Characteristic


    Original     		PDF 2SC6072 2SC6072 C6072

    2SC6072

    Abstract: C6072
    Text: 2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz typ. Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 2SC6072 SC-67 2-10U1A 2SC6072 C6072

    2SC6076

    Abstract: No abstract text available
    Text: 2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.)


    Original     		PDF 2SC6076 2SC6076

    Untitled

    Abstract: No abstract text available
    Text: 2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.)


    Original     		PDF 2SC6076

    C6078

    Abstract: No abstract text available
    Text: 2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6078 ○ Power Amplifier Applications ○ Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 µs (typ)


    Original     		PDF 2SC6078 2-10T1A C6078

    2SC6077

    Abstract: No abstract text available
    Text: 2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 s (typ)


    Original     		PDF 2SC6077 2SC6077

    GC 607 TRANSISTOR

    Abstract: c609 transistor transistor C610 IRGP440U C608
    Text: Previous Datasheet Index Next Data Sheet PD - 9.779A IRGP440U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGP440U O-247AC C-610 GC 607 TRANSISTOR c609 transistor transistor C610 IRGP440U C608

    Untitled

    Abstract: No abstract text available
    Text: 2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 µs (typ)


    Original     		PDF 2SC6077 2-10T1A

    c609 transistor

    Abstract: GC 607 TRANSISTOR transistor C607 c608 A transistor IRGP440U C605 Q
    Text: PD - 9.779A IRGP440U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		PDF IRGP440U O-247AC C-610 c609 transistor GC 607 TRANSISTOR transistor C607 c608 A transistor IRGP440U C605 Q

    2SC6078

    Abstract: C6078
    Text: 2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6078 ○ Power Amplifier Applications ○ Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 s (typ)


    Original     		PDF 2SC6078 2SC6078 C6078

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Untitled

    Abstract: No abstract text available
    Text: 2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6075

    TRANSISTOR D2102

    Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
    Text: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and


    Original     		PDF TX-28/25/21MD4 TZS6EZ002 TZS7EZ006 TZS7EZ005 TRANSISTOR D2102 L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS

    1-450-358-11

    Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
    Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.


    Original     		PDF TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		PDF KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112

    transistor C9012

    Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
    Text: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 Quvyvƒ†ÃTr€ vp‚qˆp‡‚…† The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.


    Original     		PDF GTV1000 AN98051 GTV1000 TDA884X C9029 220uF C6004 transistor C9012 transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    K105 transistor

    Abstract: K110 B3 transistor k105 transistor C458 transistor C639 varistor 520 k14 Diode C84 009 pct303 g5020 toshiba l500
    Text: ORDER NO. CPD0212020C0 Personal Computer CF-T1 This is the Service Manual for the following areas. M …for U.S.A. and Canada E …for U.K. G …for Germany Model No. CF-T1R64ZZ1 2 1: Operation System G: Microsoft Windows® XP Professional MUI K: Microsoft® Windows® XP Professional


    Original     		PDF CPD0212020C0 CF-T1R64ZZ1 65536/16M dots/1024 dots/1280 UNR9113J0L K105 transistor K110 B3 transistor k105 transistor C458 transistor C639 varistor 520 k14 Diode C84 009 pct303 g5020 toshiba l500

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123