TRANSISTOR C6082 Search Results

TRANSISTOR C6082 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C6082 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor c6082 Abstract: c6082 ENA0279A Text: 2SC6082 Ordering number : ENA0279A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features	Original	ENA0279A 2SC6082 PW10s, A0279-5/5 transistor c6082 c6082 ENA0279A	PDF
transistor c6082 Abstract: ENA0279B 2SC6082 C6082 Text: 2SC6082 Ordering number : ENA0279B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features	Original	ENA0279B 2SC6082 PW10s, A0279-7/7 transistor c6082 ENA0279B 2SC6082 C6082	PDF
transistor c6082 Abstract: No abstract text available Text: 2SC6082 Ordering number : ENA0279B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features	Original	2SC6082 ENA0279B A0279-7/7 transistor c6082	PDF
transistor c6082 Abstract: C6082 2SC6082 Text: Ordering number : ENA0279B 2SC6082 Bipolar Transistor http://onsemi.com 50V, 15A, Low VCE sat NPN TO-220F-3SG Applications • High-speed switching applications (switching regulator, driver circuit) Features • • Adoption of MBIT process Low collector-to-emitter saturation voltage	Original	ENA0279B 2SC6082 O-220F-3SG A0279-7/7 transistor c6082 C6082 2SC6082	PDF
ISL6259 Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor Text: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01	Original		PDF