TRANSISTOR C63 Search Results

TRANSISTOR C63 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C63 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor C639 Abstract: transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table Text: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistor series Rev. 07 — 8 March 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement Philips	Original	PDF	BC639; BCP56; BCX56 BC639 SC-43A* BC640 BCP56 OT223 SC-73 BCP53 transistor C639 transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table
transistor C635 Abstract: c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147 Text: BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistor series Rev. 06 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement	Original	PDF	BC635; BCP54; BCX54 BC635 SC-43A BC636 BCP54 OT223 SC-73 BCP51 transistor C635 c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147
transistor c63716 Abstract: c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52 Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 — 18 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement	Original	PDF	BC637; BCP55; BCX55 BC637 SC-43A BC638 BCP55 OT223 SC-73 BCP52 transistor c63716 c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52
c628 DIODE Abstract: IRGB430UD2 C628 transistor diode c631 transistor C629 C632 c626 diode Text: Previous Datasheet Index Next Data Sheet PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes	Original	PDF	IRGB430UD2 O-220AB C-632 c628 DIODE IRGB430UD2 C628 transistor diode c631 transistor C629 C632 c626 diode
C639 Abstract: transistor C639 transistor C640 c638 transistor c637 transistor transistor C635 transistor C636 c640 transistor transistor C639 w IRGP430UD2 Text: Previous Datasheet Index Next Data Sheet PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes	Original	PDF	IRGP430UD2 O-247AC C-640 C639 transistor C639 transistor C640 c638 transistor c637 transistor transistor C635 transistor C636 c640 transistor transistor C639 w IRGP430UD2
c638 transistor Abstract: C639 transistor C639 c637 transistor transistor C640 transistor C636 c63610 c640 transistor C633 transient transistor C635 Text: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz	Original	PDF	IRGP430UD2 O-247AC C-640 c638 transistor C639 transistor C639 c637 transistor transistor C640 transistor C636 c63610 c640 transistor C633 transient transistor C635
transistor C639 Abstract: C639 c638 transistor transistor C636 transistor C635 transistor C640 c638 diode c637 transistor c640 transistor transistor C639 w Text: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz	Original	PDF	IRGP430UD2 O-247AC C-640 transistor C639 C639 c638 transistor transistor C636 transistor C635 transistor C640 c638 diode c637 transistor c640 transistor transistor C639 w
transistor C632 Abstract: c628 DIODE igbt 500V 15A C628 transistor transistor c625 diode c631 IRGB430UD2 irgb430ud c627 DIODE Text: PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz	Original	PDF	IRGB430UD2 O-220AB C-632 transistor C632 c628 DIODE igbt 500V 15A C628 transistor transistor c625 diode c631 IRGB430UD2 irgb430ud c627 DIODE
Untitled Abstract: No abstract text available Text: 19-4625; Rev 0; 5/09 MAX17102 Evaluation Kit The MAX17102 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides the voltages and features required for activematrix, thin-film transistor (TFT), liquid-crystal displays	Original	PDF	MAX17102 450mA MAX17102
IRGB430UD2 Abstract: diode c631 c627 DIODE c628 DIODE Text: PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz	Original	PDF	IRGB430UD2 O-220AB C-632 IRGB430UD2 diode c631 c627 DIODE c628 DIODE
GC 380 Abstract: D-12 IRGBC40F Text: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V	Original	PDF	IRGBC40F 10kHz) O-220AB GC 380 D-12 IRGBC40F
c63916 Abstract: c63910 transistor C639 transistor c63916 c639 transistor C63910 cbc639 bc639 bc639 nxp c639 equivalent Text: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors Rev. 08 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA	Original	PDF	BC639; BCP56; BCX56 BC639 SC-43A BC640 BCP56 OT223 SC-73 BCP53 c63916 c63910 transistor C639 transistor c63916 c639 transistor C63910 cbc639 bc639 nxp c639 equivalent
c63610 Abstract: transistor C636 BC635 BC636 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA	Original	PDF	BC636; BCP51; BCX51 BC636 SC-43A BC635 BCP51 OT223 SC-73 BCP54 c63610 transistor C636 BC635 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A
c63716 Abstract: transistor c63716 C637 C-63716 BC637 BC637-16 BC638 BCP52 BCP55 BCX52 Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistors Rev. 07 — 25 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA	Original	PDF	BC637; BCP55; BCX55 BC637 SC-43A BC638 BCP55 OT223 SC-73 BCP52 c63716 transistor c63716 C637 C-63716 BC637-16 BC638 BCP52 BCP55 BCX52

c63610 Abstract: bc636 BCX51 c636 philips Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 06 — 29 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips	Original	PDF	BC636; BCP51; BCX51 BC636 BCP51 SC-43A SC-73 SC-62 O-243 c63610 bc636 BCX51 c636 philips
transistor c63816 Abstract: c63816 c638 transistor c63816 transistor BC638 14046 BC637 BC638-16 BCP52 BCX52 Text: BC638; BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 06 — 29 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips	Original	PDF	BC638; BCP52; BCX52 BC638 SC-43A BC637 BCP52 OT223 SC-73 BCP55 transistor c63816 c63816 c638 transistor c63816 transistor BC638 14046 BC637 BC638-16 BCP52 BCX52
C63816 Abstract: transistor c63816 c638 transistor cbc638 sot89 AE pnp c63816 transistor TO-92 plastic package transistors BC637 BC638 BC638-16 Text: BC638; BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 07 — 26 June 2007 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA	Original	PDF	BC638; BCP52; BCX52 BC638 SC-43A BC637 BCP52 OT223 SC-73 BCP55 C63816 transistor c63816 c638 transistor cbc638 sot89 AE pnp c63816 transistor TO-92 plastic package transistors BC637 BC638-16
BUL310 Abstract: No abstract text available Text: B U L 310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MP4507 TOSHIBA PO W ER TRANSISTOR M OD ULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING	OCR Scan	PDF	MP4507
transistor 2n5330 Abstract: transistor c63 NPN Transistor VCEO 80V 100V Text: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)	OCR Scan	PDF	203mm) 40MHz 40MHz 300pF transistor 2n5330 transistor c63 NPN Transistor VCEO 80V 100V
transistor C639 Abstract: transistor C635 c639 transistor C639 w Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635	OCR Scan	PDF	BC635/637/639 BC635/638/640 BC635 BC637 BC639 transistor C639 transistor C635 c639 transistor C639 w
transistor C632 Abstract: igbt 500V 15A c632 DIODE c630 diode IRGB430UD2 C632 Text: P D - 9.1067 bitemational [ïôr \|Rectifier IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c es = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes	OCR Scan	PDF	IRGB430UD2 O-220AB O-22QAB transistor C632 igbt 500V 15A c632 DIODE c630 diode IRGB430UD2 C632
transistor C636 Abstract: C636 IRGP430UD2 G633 Text: htemational P D - 9.1063 SR ectifier IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes ail "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz	OCR Scan	PDF	IRGP430UD2 O-247AC transistor C636 C636 IRGP430UD2 G633
transistor C637 Abstract: c637 transistor Text: International ^Rectifier P D - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features Vces • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz	OCR Scan	PDF	IRGP430UD2 O-247AC 4aSS452 transistor C637 c637 transistor

TRANSISTOR C63 Search Results

TRANSISTOR C63 Result Highlights (5)

TRANSISTOR C63 Datasheets Context Search

transistor C639

transistor C635

transistor c63716

c628 DIODE

C639

c638 transistor

transistor C639

transistor C632

Untitled

IRGB430UD2

GC 380

c63916

c63610

c63716

c63610

transistor c63816

C63816

BUL310

Untitled

transistor 2n5330

transistor C639

transistor C632

transistor C636

transistor C637