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    TRANSISTOR C848 Search Results

    TRANSISTOR C848 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C848 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1864

    Abstract: BTD1864I3 BTB1243I3
    Text: CYStech Electronics Corp. Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1864I3 Features • Low VCE sat • Excellent current gain characteristics • Complementary to BTB1243I3


    Original     		PDF C848I3 BTD1864I3 BTB1243I3 O-251 UL94V-0 D1864 BTD1864I3 BTB1243I3

    D2150

    Abstract: NPN transistor ECB TO-92 PT10m BTD2150A3
    Text: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2006.03.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA


    Original     		PDF C848A3 BTD2150A3 100mA BTB1424A3 UL94V-0 D2150 NPN transistor ECB TO-92 PT10m BTD2150A3

    D882S

    Abstract: TRANSISTOR D882S NPN transistor ECB TO-92 BTB772SA3 BTD882SA3
    Text: CYStech Electronics Corp. Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882SA3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics


    Original     		PDF C848A3-H BTD882SA3 BTB772SA3 UL94V-0 D882S TRANSISTOR D882S NPN transistor ECB TO-92 BTB772SA3 BTD882SA3

    D2150

    Abstract: D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A
    Text: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA


    Original     		PDF C848A3 BTD2150A3 100mA BTB1424A3 UL94V-0 D2150 D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A

    D882 q

    Abstract: D882 TRANSISTOR PIN h D882 TRANSISTOR b 772 p D882 TRANSISTOR D882 D882 TRANSISTOR transistor D882 datasheet d882 equivalent J D882
    Text: CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.11.22 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics


    Original     		PDF C848T3-H BTD882T3 BTB772T3 O-126 -55is UL94V-0 D882 q D882 TRANSISTOR PIN h D882 TRANSISTOR b 772 p D882 TRANSISTOR D882 D882 TRANSISTOR transistor D882 datasheet d882 equivalent J D882

    BTB1424AD3

    Abstract: BTD2150AD3 d2150a
    Text: CYStech Electronics Corp. Spec. No. : C848D3 Issued Date : 2004.07.06 Revised Date : 2005.04.20 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics


    Original     		PDF C848D3 BTD2150AD3 200mA BTB1424AD3 O-126ML UL94V-0 BTB1424AD3 BTD2150AD3 d2150a

    BTB772AM3

    Abstract: BTD882AM3
    Text: CYStech Electronics Corp. Spec. No. : C848M3-H Issued Date : 2003.06.17 Revised Date : 2005.07.11 Page No. : 1/4 Low VCE sat NPN Epitaxial Planar Transistor BTD882AM3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics


    Original     		PDF C848M3-H BTD882AM3 BTB772AM3 OT-89 UL94V-0 BTB772AM3 BTD882AM3

    d2150a

    Abstract: TRANSISTOR C 4460 D2150 BTB1424AD3 BTD2150AD3
    Text: CYStech Electronics Corp. Spec. No. : C848D3 Issued Date : 2004.07.06 Revised Date : 2005.11.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics


    Original     		PDF C848D3 BTD2150AD3 200mA BTB1424AD3 O-126ML UL94V-0 d2150a TRANSISTOR C 4460 D2150 BTB1424AD3 BTD2150AD3

    BTD2150L3

    Abstract: BTB1424L3
    Text: CYStech Electronics Corp. Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date : 2005.07.13 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150L3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics


    Original     		PDF C848L3 BTD2150L3 BTB1424L3 OT-223 UL94V-0 BTD2150L3 BTB1424L3

    D2150

    Abstract: d2150a BTD2150AT3
    Text: CYStech Electronics Corp. Spec. No. : C848T3 Issued Date : 2004.07.01 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AT3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics


    Original     		PDF C848T3 BTD2150AT3 200mA BTB1424AT3 O-126 UL94V-0 D2150 d2150a BTD2150AT3

    BTB1424L3

    Abstract: BTD2150L3
    Text: CYStech Electronics Corp. Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date : 2204.11.15 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150L3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics


    Original     		PDF C848L3 BTD2150L3 BTB1424L3 OT-223 UL94V-0 BTB1424L3 BTD2150L3

    TRANSISTOR D882

    Abstract: transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882
    Text: CYStech Electronics Corp. Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics


    Original     		PDF C848D3-H BTD882D3 200mA BTB772D3 O-126ML UL94V-0 TRANSISTOR D882 transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882

    D882 TRANSISTOR PIN

    Abstract: D882 q D882 TRANSISTOR D882 TRANSISTOR D882 D882 SPECIFICATION h D882 D882 p J D882 transistor D882 datasheet
    Text: CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3/S Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics


    Original     		PDF C848T3-H BTD882T3/S BTB772T3/S BTD882T3 O-126 UL94V-0 D882 TRANSISTOR PIN D882 q D882 TRANSISTOR D882 TRANSISTOR D882 D882 SPECIFICATION h D882 D882 p J D882 transistor D882 datasheet

    BTB1424N3

    Abstract: BTD2150N3
    Text: CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2006.10.25 Page No. : 1/5 Low VCE sat NPN Epitaxial Planar Transistor BTD2150N3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A • Excellent current gain characteristics


    Original     		PDF C848N3-A BTD2150N3 BTB1424N3 OT-23 Pw350s, UL94V-0 BTB1424N3 BTD2150N3

    d1760

    Abstract: TRANSISTOR d1760 BTB1184J3 BTD1760J3 d1760 NPN Transistor BTD1760
    Text: CYStech Electronics Corp. Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2005.10.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics


    Original     		PDF C848J3 BTD1760J3 BTB1184J3 O-252 UL94V-0 d1760 TRANSISTOR d1760 BTB1184J3 BTD1760J3 d1760 NPN Transistor BTD1760

    BTB1424N3

    Abstract: BTD2150N3
    Text: CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 1/4 Low VCE sat NPN Epitaxial Planar Transistor BTD2150N3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A • Excellent current gain characteristics


    Original     		PDF C848N3-A BTD2150N3 BTB1424N3 OT-23 UL94V-0 BTB1424N3 BTD2150N3

    D882 TRANSISTOR PIN

    Abstract: D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet
    Text: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882I3 BVCEO IC RCESAT Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 1/6 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A


    Original     		PDF BTD882I3 C848I3-H BTB772I3 O-251 Pw350s UL94V-0 D882 TRANSISTOR PIN D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet

    D882 TRANSISTOR PIN

    Abstract: D882 SPECIFICATION D882 TRANSISTOR TO 252 D882 D882 252 d882 J D882 d882 to252 transistor "D882 p" d882 power transistor
    Text: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882J3 BVCEO IC RCESAT Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 1/7 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A


    Original     		PDF BTD882J3 C848J3-H BTB772J3 O-252 Pw350us UL94V-0 D882 TRANSISTOR PIN D882 SPECIFICATION D882 TRANSISTOR TO 252 D882 D882 252 d882 J D882 d882 to252 transistor "D882 p" d882 power transistor

    BTB1424AM3

    Abstract: BTD2150AM3
    Text: Spec. No. : C848M3-A Issued Date : 2002.08.18 Revised Date : 2005.10.04 Page No. : 1/5 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2150AM3 Features • Low VCE sat , VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA • Excellent current gain characteristics


    Original     		PDF C848M3-A BTD2150AM3 BTB1424AM3 OT-89 UL94V-0 BTB1424AM3 BTD2150AM3

    d1760

    Abstract: TRANSISTOR d1760 d1760 NPN Transistor C848J3 BTB1184J3 BTD1760J3 BTD1760
    Text: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC RCESAT Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6 50V 3A 125mΩ typ. Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A


    Original     		PDF BTD1760J3 C848J3 BTB1184J3 O-252 UL94V-0 d1760 TRANSISTOR d1760 d1760 NPN Transistor C848J3 BTB1184J3 BTD1760J3 BTD1760

    c845

    Abstract: c846 transistor D-12 IRGBC30K C-844
    Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC30K O-220AB C-848 c845 c846 transistor D-12 IRGBC30K C-844

    c845

    Abstract: C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER
    Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC30K O-220AB C-848 c845 C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER

    s48b

    Abstract: CS-48B C848B transistor marking SA 8
    Text: Transistors SST6838 I NPN General Purpose Transistor SST6838 •Features 1 8 V ceo < 4 0 V tc= 1m A) 2 ) Com plem ents the SST8839. •External dimensions (Units ' mm) • Package, marking, and packaging specifications Type Package name Marking SST8838


    OCR Scan     		PDF SST6838 SST8839. SST8838 100MHz C848B SPEC-C22) s48b CS-48B transistor marking SA 8

    c845

    Abstract: No abstract text available
    Text: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    OCR Scan     		PDF IRGBC30K C-847 O-22QAB C-848 4A554S2 0020b3fl c845