NEC diode
Abstract: transistor marking 7D 2SD1695 C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and
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2SD1695
2SD1695
NEC diode
transistor marking 7D
C11531E
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Untitled
Abstract: No abstract text available
Text: BUL1403ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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BUL1403ED
BUL1403ED
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BUL903ED
Abstract: No abstract text available
Text: BUL903ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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BUL903ED
BUL903ED
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Untitled
Abstract: No abstract text available
Text: Medium Power Transistor Motor, Relay drive (6010V, 2A) 2SD2143 1.5 5.1 (2) 6.5 0.9 5.5 2.3 (1) 0.75 Dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads.
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2SD2143
R1120A
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OPB704WZ
Abstract: opb704g OPB70AWZ OPB704 OP505 OPB705 OPB703 890N
Text: Reflective Object Sensor OPB703 through OPB705, OPB703WZ through OPB705WZ, OPB70AWZ through OPB70HWZ Features: • • • • Phototransistor output High sensitivity Low-cost plastic housing Available with lenses for dust protection and ambient light filtration
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OPB703
OPB705,
OPB703WZ
OPB705WZ,
OPB70AWZ
OPB70HWZ
OPB703,
OPB704
OPB705
890nm)
OPB704WZ
opb704g
OP505
890N
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transistor smd yw
Abstract: PMEM4020AND PMEM4020APD smd transistor equivalent table MHC081
Text: PMEM4020AND NPN transistor/Schottky rectifier module Rev. 01 — 4 October 2004 Product data sheet 1. Product profile 1.1 General description Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457
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PMEM4020AND
OT457
SC-74)
PMEM4020APD.
transistor smd yw
PMEM4020AND
PMEM4020APD
smd transistor equivalent table
MHC081
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hcpl4053
Abstract: IL33153 ac motor speed control circuit diagram with IGBT HCPL-4053 what is fast IGBT transistor desaturation design Discrete IGBTS wiring diagram brushless AC motor HALF BRIDGE NPN DARLINGTON POWER MODULE igbt ac motor speed control
Text: TECHNICAL DATA IL33153 Single IGBT Gate Driver The IL33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing
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IL33153
IL33153
012AA)
hcpl4053
ac motor speed control circuit diagram with IGBT
HCPL-4053
what is fast IGBT transistor
desaturation design
Discrete IGBTS
wiring diagram brushless AC motor
HALF BRIDGE NPN DARLINGTON POWER MODULE
igbt ac motor speed control
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Thermal Design
Abstract: transistor q7 BUT 11 Transistor 78l00 transistor TA 78L 78M00 NJM7800 7221U 79m00 NJM431U
Text: 3-TERMINAL VOLTAGE REGULATOR 1. Protection Circuit 1 Positive Voltage 3-Terminal Regulator (Fig.1) (1-1) Thermal Shut Down Circuit The thermal shut down circuit cuts off the output voltage to drop down the temperature to the safe level when the junction temperature in the chip goes up to extreme high (Tj=150~200°C).
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MGP2N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching
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MGP2N60D
220AB
MGP2N60D
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79LOO
Abstract: NJM431U NJM79L00 NJU7211U NJU7212U TO-220F torque transistor TA 78L qs sot-89 on 614 power transistor *7201U
Text: E JR C 3 3-TERMINAL VOLTAGE REGULATOR 1.Protection Circuit 1 Positive Voltage 3-Terminal Regulator (Fig.l) (1-1) Thermal Shut Down Circuit The thermal shut down circuit cuts off the output voltage to drop down the temperature to the safe level when the junc
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Untitled
Abstract: No abstract text available
Text: MH 66004, 66005 H IG H V O LTA G E O PTO -ISO LA TO R S C - ! O L IF C IR O N IC P R O R O C S DIVISION 40,000 V FEATURES 3LEADS DIA' BLACK DOT 2 • High temperature operation+125°C • Hermetic ceramic packaging • High surge protection / LEADS RED DOT
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Mil-66004
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Design and Fabrication of 5V Constant Voltage Power supply
Abstract: CS-8101 alarm system with constant current source inductive power regulator electromechanical VOLTAGE REGULATOR PNP DARLINGTON SINK DRIVER 500ma linear regulator application
Text: Application Note Linear Regulator Protection Circuitry by Kieran OÕMalley Most monolithic linear regulators contain basic protection features to safeguard against potentially catastrophic events. These features include short circuit and overvoltage protection, thermal shutdown, reverse battery and reverse transient protection.
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TRANSISTOR SMD MARKING CODE
Abstract: PMEM4010PD PNP TRANSISTOR SOT457 TRANSISTOR SMD MARKING CODE A1 transistor SMD 104 TRANSISTOR SMD MARKING CODE MV DIODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010PD PNP transistor/Schottky diode module Product specification 2002 Oct 28 Philips Semiconductors Product specification PNP transistor/Schottky diode module PMEM4010PD PINNING FEATURES • 600 mW total power dissipation
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M3D302
PMEM4010PD
SCA74
613514/01/pp12
TRANSISTOR SMD MARKING CODE
PMEM4010PD
PNP TRANSISTOR SOT457
TRANSISTOR SMD MARKING CODE A1
transistor SMD 104
TRANSISTOR SMD MARKING CODE MV DIODE
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AN9201
Abstract: CA3242 CA3242E CA3262 CA3262A CA3272 CA3272A CA3282 CA3292A HIP0080
Text: No. AN9201.1 Application Note April 1994 PROTECTION CIRCUITS FOR QUAD AND OCTAL LOW SIDE POWER DRIVERS by Wayne Austin Overview Normally, the defined requirements for a Quad or Octal Driver are very much affected by the type of protection circuits used on
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AN9201
CA3242
CA3242E
CA3262
CA3262A
CA3272
CA3272A
CA3282
CA3292A
HIP0080
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SS14 SOD123
Abstract: SS14 DIODE schottky SS14 DIODE dc-dc DC SS14 diode Silicon Schottky Diode sod123 SMA-DIODE SOD523 footprint SS14 DIODE AN1039 high power bipolar transistor selection
Text: AN10393 BISS transistors and MEGA Schottky rectifiers - improved technologies for discrete semiconductors Rev. 01.00 — 01 September 2005 Application note Document information Info Content Keywords BISS transistor, MEGA Schottky rectifier, DC/DC converter, Loadswitch,
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AN10393
PBSS4240V,
PBSS4350T,
PBSS4320T,
PMEG2010AEJ,
PMEG1020EJ,
PMEG6010AED,
OD323F,
OT666
SS14 SOD123
SS14 DIODE schottky
SS14 DIODE dc-dc
DC SS14 diode
Silicon Schottky Diode sod123
SMA-DIODE
SOD523 footprint
SS14 DIODE
AN1039
high power bipolar transistor selection
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PCIM 176
Abstract: AN9201 CA3292 CA3242E CA3272 ca3242E harris ca3262 PROTECTED QUAD LOW-SIDE DRIVER WITH FAULT DETECTION CA3242 CA3262A
Text: Harris Semiconductor No. AN9201.1 Harris Intelligent Power April 1994 PROTECTION CIRCUITS FOR QUAD AND OCTAL LOW SIDE POWER DRIVERS by Wayne Austin Overview Normally, the defined requirements for a Quad or Octal Driver are very much affected by the type of protection circuits used on
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AN9201
CA3242
CA3282
CA3262,
CA3262A
CA3292A
CA3272,
CA3272A
HIP0080,
HIP0081
PCIM 176
CA3292
CA3242E
CA3272
ca3242E harris
ca3262
PROTECTED QUAD LOW-SIDE DRIVER WITH FAULT DETECTION
CA3242
CA3262A
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Untitled
Abstract: No abstract text available
Text: 7MBP200RA060 600V / 200A 7 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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Untitled
Abstract: No abstract text available
Text: 7MBP25RA120 1200V / 25A 7 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection
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MIG75Q7CSB1X
Abstract: TLP559
Text: MIG75Q7CSB1X MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG75Q7CSB1X 1200V/75A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter, brake power circuits and control circuits (IGBT drive units, protection units for short-circuit
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MIG75Q7CSB1X
200V/75A
E87989
MIG75Q7CSB1X
TLP559
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification DTDG23YP Features NPN Epitaxial Planar Silicon Transistor with built-in resistors and zener diode . High DC Current Gain. Built-in Zener Diode Gives Strong Protection Against Reverse Surge By L-load (an inductive load). Absolute Maximum Ratings Ta = 25
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DTDG23YP
40x40x0
500mA
30MHz
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1000w inverter PURE SINE WAVE schematic diagram
Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design
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MGS05N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGS05N60D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGS05N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in
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MGS05N60D/D
MGS05N60D
IGBTMGS05N60D/D
MGS05N60D
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IGBT in TO92 Package
Abstract: MGS13002D
Text: MOTOROLA Order this document by MGS13002D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGS13002D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in
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MGS13002D/D
MGS13002D
IGBT in TO92 Package
MGS13002D
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Untitled
Abstract: No abstract text available
Text: Ä 7# SGS-THOMSON & MAGNETIC PICKUP IGNITION CONTROLLER • DIRECT DRIVING OF THE EXTERNAL DAR LINGTON ■ OPERATES WITH A WIDE RANGE OF MAG NETIC PICKUP TYPES ■ CHARGING ANGLE DWELL CONTROL ■ COIL CURRENT PEAK LIMITATION ■ CONTINUOUS COIL CURRENT PROTECTION
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300ms.
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