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    TRANSISTOR COMMON BASE AMPLIFIER Search Results

    TRANSISTOR COMMON BASE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR COMMON BASE AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2470

    Abstract: 55AP transistor Common Base amplifier
    Text: R.A.P.992605-BEHRE 2425-25 25 WATT, 24V, Class C Microwave 2410-2470 MHz GENERAL DESCRIPTION CASE OUTLINE 55AP Common Base Narrow Lead The 2425-25 is a common base bipolar transistor capable of providing 25 Watts of Class C RF output power over the band of 2410-2470 MHz. This transistor is


    Original     		PDF 992605-BEHRE 2470 55AP transistor Common Base amplifier

    TAN75A

    Abstract: common base transistor
    Text: TAN75A NPN RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: The ASI TAN75A is a Common Base Transistor Designed for TACAN Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching


    Original     		PDF TAN75A TAN75A common base transistor

    J162

    Abstract: transistor j162 SATCOM ASAT35L
    Text: ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting


    Original     		PDF ASAT35L ASAT35L J162 transistor j162 SATCOM

    TAN250A

    Abstract: TACAN transistor TACAN
    Text: TAN250A RF POWER TRANSISTOR DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. PACKAGE STYLE FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching MAXIMUM RATINGS


    Original     		PDF TAN250A TAN250A TACAN transistor TACAN

    norton amplifier

    Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
    Text: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output


    Original     		PDF AN-278 norton amplifier LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode

    MSC80183

    Abstract: MSC85623
    Text: MSC80183 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80183 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for Amplifier/Oscillator Applications up to 2.3 GHz. PACKAGE 230 2L FLG FEATURES: • • Hermetically Sealed Package


    Original     		PDF MSC80183 MSC80183 MSC85623 MSC85623

    2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR


    Original     		PDF MRF16030 MRF16030 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"

    2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    Abstract: 2.4 ghz transmitter rf test
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR


    Original     		PDF MRF16006 MRF16006 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test

    AM0912-150

    Abstract: JTIDS 2L TRANSISTOR "RF Power Transistor"
    Text: AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching


    Original     		PDF AM0912-150 AM0912-150 JTIDS 2L TRANSISTOR "RF Power Transistor"

    AM0912-080

    Abstract: TACAN TACAN transistor
    Text: AM0912-080 RF POWER TRANSISTOR DESCRIPTION: The ASI AM0912-080 is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching PACKAGE - .400 x .400 2NLFL


    Original     		PDF AM0912-080 AM0912-080 TACAN TACAN transistor

    Untitled

    Abstract: No abstract text available
    Text: AM0912-080 RF POWER TRANSISTOR DESCRIPTION: The ASI AM0912-080 is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching PACKAGE - .400 x .400 2NLFL


    Original     		PDF AM0912-080 AM0912-080

    MMBTH10RG

    Abstract: No abstract text available
    Text: MMBTH10RG MMBTH10RG NPN RF Transistor C • This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators.


    Original     		PDF MMBTH10RG OT-23 MMBTH10RG

    motorola sps transistor

    Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
    Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR


    Original     		PDF MRF16030/D MRF16030 MRF16030 DEVICEMRF16030/D motorola sps transistor motorola 572 transistor Motorola 1600 395C-01 sps transistor

    2SC5170

    Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for


    OCR Scan     		PDF 2SC5170 2SC5170 100Hz) 110mVtyp X10-3 LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR

    BFY88

    Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
    Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration


    OCR Scan     		PDF i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288

    UHF TRANSISTOR

    Abstract: 700M SG991AC
    Text: GAE GREAT AMERICAN ELECTROINCS SG991AC Silicon NPN high power UHF transistor SG991AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:


    OCR Scan     		PDF SG991AC FO-57C 0D000S? UHF TRANSISTOR 700M SG991AC

    UHF TRANSISTOR

    Abstract: SG9132AC
    Text: w GAE GREAT AMERICAN ELECTROINCS SG9132AC Silicon NPN high power UHF transistor SG9132AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:


    OCR Scan     		PDF SG9132AC FO-57C Volt-57C UHF TRANSISTOR SG9132AC

    UHF TRANSISTOR

    Abstract: SG9101AC transistor Common collector configuration npn 28v 100w amplifier
    Text: GAE GREAT AMERICAN ELECTROINCS SG9101AC Silicon NPN high power UHF transistor SG9101 AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:


    OCR Scan     		PDF SG9101AC SG9101 FO-57C 700MhzA/cc 000004b UHF TRANSISTOR SG9101AC transistor Common collector configuration npn 28v 100w amplifier

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D • bb53T31 □01SE7ci 1 ■ RZB12050Y -r -5 3 -1 3 J PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor intended for use in a common-base, class-C narrowband amplifier operating under pulsed conditions.


    OCR Scan     		PDF bb53T31 01SE7c RZB12050Y

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0015121 T I _ J V PVB42004X T ~ Z 1 - 01 MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-B power amplifier up to 4,2 GHz. Features:


    OCR Scan     		PDF PVB42004X

    2689* transistor

    Abstract: MRF1035
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor Designed for 10 25-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 70 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON


    OCR Scan     		PDF MRF10500 MRF10350 376C00 MRF10070 2689* transistor MRF1035

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F 1500 The RF Line M icrowave Pulse Power Transistor Motorola Preferred Device Designed for 1025-1150 MHz pulse common base amplifier applications such as DME. • 500 W PEAK . 1025-1150 MHz MICROWAVE POWER TRANSISTOR


    OCR Scan     		PDF MRF1500

    motorola 269-5

    Abstract: z627
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 1 0 25-1 150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 150 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR


    OCR Scan     		PDF MRF10500 MRF10150 motorola 269-5 z627

    BF314

    Abstract: TRANSISTOR bf314
    Text: ' "JÊ S ILIC O N sS NPN HIGH PLANAR EPITAXIAL FREQUENCY TRANSISTOR % MECHANICAL OUTLINE GENERAL DESCRIPTION : The BF31^ is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration. TO-92F


    OCR Scan     		PDF BF314 O-92F 120ohm 190MHz 100MHz 200MHz 100MHz TRANSISTOR bf314