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    TRANSISTOR D 1795 Search Results

    TRANSISTOR D 1795 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 1795 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    tda8362b

    Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
    Text: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF 1N4003ID 1N4005G 1N4006G 30-Jun-02 30-Jun-01 30-Jun-01 31-Dec-01 tda8362b OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262

    difference between IGBT and MOSFET IN inverter

    Abstract: IGBT SCHEMATIC use igbt for 3 phase induction motor rectifier pwm igbt DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink
    Text: AN1541/D Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. http://onsemi.com APPLICATION NOTE INTRODUCTION As power conversion relies more on switched applications, semiconductor manufacturers need to create


    Original     		PDF AN1541/D r14525 difference between IGBT and MOSFET IN inverter IGBT SCHEMATIC use igbt for 3 phase induction motor rectifier pwm igbt DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink

    IGBT SCHEMATIC

    Abstract: motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1541/D AN1541 Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. INTRODUCTION As power conversion relies more on switched applications,


    Original     		PDF AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541

    IC free

    Abstract: Nippon Aleph r 2501 kk 106 OJ-451-N23 D2253 HP 4506 oj-4506-n23 Aleph 1N23 diode OH-217
    Text: www.aleph-usa.com Photosensors DATA BOOK Photosensors DATA BOOK JUN 2004 First edition Things to keep in mind when using the data book 1. Changes in specifications Due to improvements, please be aware that the specifications/descriptions, etc., of the products contained


    Original     		PDF QS9000/TS16949 IC free Nippon Aleph r 2501 kk 106 OJ-451-N23 D2253 HP 4506 oj-4506-n23 Aleph 1N23 diode OH-217

    Reflective Type

    Abstract: IC free OS-551A-N2 OH-218-A5 OH-318-A5 JASO d 611 Nippon Aleph high resolution reflective photo interrupter OM-751-N24 OH-217
    Text: Photosensors DATA BOOK August 2007 Second edition Things to keep in mind when using the data book 1. Changes in specifications Due to improvements, please be aware that the specifications/descriptions, etc., of the products contained in this data book are subject to change without prior notice.


    Original     		PDF 827-8000FAX. 44-1933-679600FAX 852-2411-0318FAX Reflective Type IC free OS-551A-N2 OH-218-A5 OH-318-A5 JASO d 611 Nippon Aleph high resolution reflective photo interrupter OM-751-N24 OH-217

    Untitled

    Abstract: No abstract text available
    Text: 19-1795; Rev 1; 9/05 Low-Power Triple-Output TFT LCD DC-DC Converter The MAX1779 triple-output DC-DC converter provides highly efficient regulated voltages required by small active matrix, thin-film transistor TFT liquid-crystal displays (LCDs). One high-power DC-DC converter and


    Original     		PDF MAX1779 250kHz MAX1779 16-pin

    Untitled

    Abstract: No abstract text available
    Text: 19-1795; Rev 1; 9/05 Low-Power Triple-Output TFT LCD DC-DC Converter The MAX1779 triple-output DC-DC converter provides highly efficient regulated voltages required by small active matrix, thin-film transistor TFT liquid-crystal displays (LCDs). One high-power DC-DC converter and


    Original     		PDF MAX1779 250kHz MAX1779 16-pin

    MAX1779

    Abstract: MAX1779EUE
    Text: 19-1795; Rev 0; 11/00 Low-Power Triple-Output TFT LCD DC-DC Converter The MAX1779 triple-output DC-DC converter provides highly efficient regulated voltages required by small active matrix, thin-film transistor TFT liquid-crystal displays (LCDs). One high-power DC-DC converter and


    Original     		PDF MAX1779 250kHz MAX1779 16-pin MAX1779EUE

    Untitled

    Abstract: No abstract text available
    Text: 19-1795; Rev 0; 11/00 Low-Power Triple-Output TFT LCD DC-DC Converter The MAX1779 triple-output DC-DC converter provides highly efficient regulated voltages required by small active matrix, thin-film transistor TFT liquid-crystal displays (LCDs). One high-power DC-DC converter and


    Original     		PDF MAX1779 250kHz MAX1779 16-pin

    Untitled

    Abstract: No abstract text available
    Text: 123455667 DC-Motor Controller 89ABCD9E7 CPU o o MelexCM CPU Dual RISC CPU – 5MIPS o LIN protocol controller o 16-bit application CPU90 Internal RC-Oscillator Memories o o 2kbyte RAM, 30kbyte Flash, 128 byte EEPROM Flash for series production Periphery


    Original     		PDF 89ABCD9E7 16-bit CPU90 30kbyte 100-kBaud 100Hz 100kHz 16-channel 10-bit

    Transistor 9845

    Abstract: handsfree chip microphone electret electret 3 AS2522B k 1241 transistor AS2522 525 r 1241 transistor austriamicrosystems phone AS2522A
    Text: austriamicrosystems Telephone Line Interface and Speakerphone Circuit AS2522A, AS2522B Delivery as Dice preliminary Key Features - Line/Speech circuit, DTMF dialer, FSK transmitter and tone ringer on a 32-pin CMOS-IC Enhanced voice switching Background noise monitoring


    Original     		PDF AS2522A, AS2522B AS2522 CH-8640 Transistor 9845 handsfree chip microphone electret electret 3 k 1241 transistor AS2522 525 r 1241 transistor austriamicrosystems phone AS2522A

    Transistor 9845

    Abstract: AS2524 D-81539 81539 handsfree chip
    Text: Telephone Line Interface and Speakerphone Circuit AS2523/24 Delivery as Dice preliminary Key Features - Line/Speakerphone circuit on a 28-pin CMOS-IC, simplified inventory: same die for AS2523 and AS2524 Serial I/F on AS2523, parallel I/F on AS2524 Enhanced voice switching


    Original     		PDF AS2523/24 28-pin AS2523 AS2524 AS2523, Transistor 9845 D-81539 81539 handsfree chip

    PC9203

    Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
    Text: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439


    OCR Scan     		PDF PC44E PC44H PC2102 PC3439 PC3442 PC3585 PC3879 PC4036* PC5038 PC5240 PC9203 PC638 PC6079 PC5671 PC160-1 PC9166 PC5303 C6650 PC9202

    2SK1795

    Abstract: MEI-1202 TEA-1035
    Text: DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK1795 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The2S K 1795 is N-channel M O S Field Effect Transistor designed fo r PACKAGE DIMENSIONS in millimeters high voltage switching applications.


    OCR Scan     		PDF 2SK1795 IEI-1209) MEI-1202 TEA-1035

    Untitled

    Abstract: No abstract text available
    Text: O utline Dimensions Case : E-pack 2 .5 5 - 0 2 5,2 EIAJ No. ^ 0-2 V P Æ îi n ff l Date code 1795 9N 2 .3 2 .3 P in s ty le $ B ase C o lle cto r U n it • mm E m itt e r A bsolute Maximum R atings Junction Temperature -X- - X 3IJIE Base Voltage X ; 7 ?


    OCR Scan     		PDF 2SA1795

    2SK1795

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T he2S K 1795 is N-channel M O S Field Effect Transistor designed for


    OCR Scan     		PDF 2SK1795 The2SK1795isN-channel IEI-1209) 2SK1795 MEI-1202 TEA-1035

    transistor A 562

    Abstract: No abstract text available
    Text: Technische Information/Technical Information IGBT-Module IGBT-Modules BSM 10 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Kollektor-Em itter-Sperrspannung collector-em itter voltage Kollektor-Dauergleichstrom


    OCR Scan     		PDF

    TH3L10

    Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
    Text: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500


    OCR Scan     		PDF 2SD1022 2SB1282 O-220 TH3L10 3L10Z* TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-F1062 OT-23 BFT92 H35bD5 900MHz

    Untitled

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK1795 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


    OCR Scan     		PDF 2SK1795

    ut161

    Abstract: bip 373 UT162 AOI13 UT163 half adder circuit using 2*1 multiplexer G/transistor bip 109 UT169 SCA92 AOI21
    Text: Radiation-Hardened Semicustom Products UTD-R Gate Array Family Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER April 1990 FEA TU RES □ Total dose 1 x 106 rads Si to this data sheet specification according to M IL-STD-883, M ethod 1019 □ Total dose 1 x 107 rads (Si) functional


    OCR Scan     		PDF IL-STD-883, cobalt-60 150mA 500msec -3-4-90-PD ut161 bip 373 UT162 AOI13 UT163 half adder circuit using 2*1 multiplexer G/transistor bip 109 UT169 SCA92 AOI21

    ip 66

    Abstract: TLP1242C6
    Text: TOSHIBA TLP1242 C6 TOSHIBA PHOTO INTERRUPTER INFRATED LED + PHOTOTRANSISTOR T L P 1 2 4 2 ( C 6) Unit in mm COPIER, PAGE PRINTER, FACSIMILE FAN-HEATER, AIR CONDITIONER TERMINAL EQUIPMENT IN BANKING FACILITIES GAME MACHINE TLP1242 (C6) is a compact photointerrupter with


    OCR Scan     		PDF TLP1242 TLP1242 ip 66 TLP1242C6