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    TRANSISTOR D 2213 Search Results

    TRANSISTOR D 2213 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 2213 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMUN2211LT1/D SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2211LT1 SER IES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    MMUN2211LT1/D MMUN2211LT1 OT-23 OT-23 O-236AB) PDF

    aim 65

    Abstract: Q68000-A4984
    Text: 2SC D • 0235bGS GDOMflHi A WÊSI EG NPN Silicon Power Transistor SIEMENS AKTIEN GE SE LL SC HA F BU 626 A - Q 'T '- 3 3 - / 3 BU 626 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is


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    0235bGS Q68000-A4984 fi235bOS BU626A D--10 aim 65 Q68000-A4984 PDF

    transistor d 2213

    Abstract: No abstract text available
    Text: KSR1213 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circu it. Inverter, Interface circu it, D river C ircu it • B uilt in b is s R e sisto r (R , =2.2kQ, R j*47kfl) • Com plem ent to KSR 2213 ABSOLUTE MAXIMUM RATINGS (TA=25t;)


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    KSR1213 47kfl) transistor d 2213 PDF

    transistor 626

    Abstract: BU626A transistor d 2213 Q68000-A4984
    Text: 2SC D • 02 35b G S GDOMflHi S IE Û & BU 626 A NPN Silicon Power Transistor '-3 3 -/ 3 SIEM EN S A K T IE N G E S E L L S C H A F BU 626 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is


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    0235bGS Q68000-A4984 fi235bOS transistor 626 BU626A transistor d 2213 Q68000-A4984 PDF

    93 marking sc-59

    Abstract: N2211 2213T1
    Text: Order this data sheet by MUN2211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M U N2211T1 M UN2212T1 M U N 2213T1 B ias R e sisto r T ra n s is to r NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and


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    MUN2211T1/D SC-59 MUN2211T1 MUN2212T1 MUN2213T1 2PHX31020F-2 93 marking sc-59 N2211 2213T1 PDF

    2SC2522

    Abstract: 15D transistor 2SC2522A R2213 2C2523 2sa1073 2SC25 10ICI
    Text: FUJITSU MICROEL ECT RONICS 31E D B 374=^2 DOlbSlfl 3 S F M I r - 22-13 E f t . r . S F : PRODUCT PROFILE " U H T i C U 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION T he 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN gen era l purpose, high pow er


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    r-22-13 2SC2522, 2C2522A, 2C2523 2SC2522/2SC2522A/2SC2523 2SC2522/2SC25 /2SC2523 300lis; 2SC2522A T-33-13 2SC2522 15D transistor R2213 2C2523 2sa1073 2SC25 10ICI PDF

    809p

    Abstract: No abstract text available
    Text: DIONICS INC 65 fìu sh m o re Street W estbu ry N Y 1 1 5 9 0 5 1 6 9 9 7 - 7 4 7 4 Ì- M - . *& , n>. » A -11' VACUUM -vi*» jr . • . if-«*,«’1. . . i& ë The Dionics DTP 209 discrete PNP transistor, and D l 809P, 609P, and 409P PNP arrays are designed for


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: KSR1213 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, Driver C ircuit • B uilt in bias R esistor (R, =2.2Ki2, R2=47K£2) • C om plem ent to K SR 2213 ABSOLUTE MAXIMUM RATINGS (T a=25°C)


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    KSR1213 PDF

    D1829

    Abstract: 2SB1227 2SD1829
    Text: [^O rd e ring n u m b e r: EN 2213B 2SB1227/2SD1829 No.2213B PNP/NPN Epitaxial Planar Silicon Darlington Transistor SAXYO i Driver Applications A pplications • Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constantvoltage regulators.


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    2213B 2SB1227/2SD1829 2SB1227 D1829 2SB1227 2SD1829 PDF

    transistor BD 512

    Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
    Text: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier­ ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be­ stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern­


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    12-VAkku /50Hz III/18/379 transistor BD 512 transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A PDF

    Untitled

    Abstract: No abstract text available
    Text: w w w .fa irc h ild s e m i.c o m S E M I C O N D U C T O R tm RC4391 Inverti ng and Step-Down S w i t c h i n g Regul at or Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage Regulates supply changes • Micropower —


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    RC4391 RC4391 DS30004391 PDF

    stackpole ferrite 24B

    Abstract: 1601 resistor dale MBR140P stackpole 24b curves P-6042 pot core inductor ferrite pot core stackpole 24b saturation NY TRANSISTOR MAKING LIST 1N914
    Text: F A IR C H IL D s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m RC4391 In v e r tin g and S te p - D o w n S w i t c h i n g R e g u la to r Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage


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    RC4391 RC4391 DS30004391 stackpole ferrite 24B 1601 resistor dale MBR140P stackpole 24b curves P-6042 pot core inductor ferrite pot core stackpole 24b saturation NY TRANSISTOR MAKING LIST 1N914 PDF

    Untitled

    Abstract: No abstract text available
    Text: w w w .fa irc h ild s e m i.c o m S E M I C O N D U C T O R tm RC4391 Inverti ng and Step-Down S w i t c h i n g Regul at or Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage Regulates supply changes • Micropower —


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    RC4391 RC4391 DS30004391 PDF

    pot core inductor

    Abstract: 2N33904 2N33904 transistor MBR140P RC4391N SP-Cap/ Polymer Aluminum Capacitors RC4190 RC4391 RV4391 Stackpole ferrite
    Text: www.fairchildsemi.com RC4391 Inverting and Step-Down Switching Regulator Features • High performance — High switch current — 375 mA High efficiency — 70% typically • Low battery detection capability • 8-lead mini-DIP or S.O. package • Versatile —


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    RC4391 RC4391 DS30004391 pot core inductor 2N33904 2N33904 transistor MBR140P RC4391N SP-Cap/ Polymer Aluminum Capacitors RC4190 RV4391 Stackpole ferrite PDF

    rc4191

    Abstract: Indiana general ferrite core ferroxcube Ee core
    Text: Raytheon Electronics S e m ic o n d u c to r D iv is io n RC4391 Inverting and Step-Down Switching Regulator Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage Regulates supply changes • M icropower — Low quiescent current — 170 |lA


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    RC4391 RC4391 RC4391N RC4391M RV4391N RM4391D 00Cnfl7E rc4191 Indiana general ferrite core ferroxcube Ee core PDF

    2N33904

    Abstract: stackpole 24b curves 2n3904 npn fairchild beta stackpole ferrite 24B rc4191 ferrite pot core mini inverter circuit schematic diagram NY TRANSISTOR MAKING LIST Siemens Ferrite n27 1N914
    Text: F A IR C H IL D s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m RC4391 In v e r tin g and S te p - D o w n S w i t c h i n g R e g u la to r Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage


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    RC4391 RC4391 DS30004391 2N33904 stackpole 24b curves 2n3904 npn fairchild beta stackpole ferrite 24B rc4191 ferrite pot core mini inverter circuit schematic diagram NY TRANSISTOR MAKING LIST Siemens Ferrite n27 1N914 PDF

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm RC4391 Inverting and Step-Down Switching Regulator Features • High performance — High switch current — 375 mA High efficiency — 70% typically • Low battery detection capability


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    RC4391 RC4391 PDF

    2N33904

    Abstract: 2N33904 transistor Stackpole ferrite MBR140P 2N3635 MOTOROLA RM4391 2n3904 npn fairchild beta Dale Resistor 7501 1N914 RC4391
    Text: PRODUCT SPECIFICATION RC4391 Pin Descriptions Pin Assignments LBR 1 8 VFB Pin Number Pin Function Description LBD 2 7 VREF 1 Low Battery Resistor LBR CX 3 6 +VS 2 Low Battery Detector (LBD) 3 Timing Capacitor (CX) 4 Ground 5 External Inductor (LX) 6 +Supply Voltage (+VS)


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    RC4391 RV4391 RM4391 DS30004391 2N33904 2N33904 transistor Stackpole ferrite MBR140P 2N3635 MOTOROLA RM4391 2n3904 npn fairchild beta Dale Resistor 7501 1N914 RC4391 PDF

    rc4391n

    Abstract: rc4191 MEAB RC4193 2n3904 npn fairchild beta RC419
    Text: F A I R C H I L D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC4391 I n v e r t i n g a nd S t e p - D o w n S w i t c h i n g R e g u l a t o r Features • High performance — High switch current — 375 mA High efficiency — 70% typically


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    RC4391 RC4391 rc4391n rc4191 MEAB RC4193 2n3904 npn fairchild beta RC419 PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF

    marking code 38 SMD Transistor

    Abstract: smd transistor 547 TRANSISTOR SMD CODE PACKAGE SOT363 transistor smd code marking nc marking code PF SMD Transistor smd transistor sot363 TRANSISTOR SMD catalog TRANSISTOR SMD MARKING CODE 26 transistor smd code marking nc g TRANSISTOR SMD MARKING CODE GFs
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH206 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = -12 V


    Original
    BSH206 BSH206 OT363 OT363 marking code 38 SMD Transistor smd transistor 547 TRANSISTOR SMD CODE PACKAGE SOT363 transistor smd code marking nc marking code PF SMD Transistor smd transistor sot363 TRANSISTOR SMD catalog TRANSISTOR SMD MARKING CODE 26 transistor smd code marking nc g TRANSISTOR SMD MARKING CODE GFs PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ S-8430AF STEP UP & DOWN VOLTAGE REGULATOR T h e S -8 4 3 0 A F is a c h o p p e r-ty p e D C /D C c o n v e rte r d e v e lo p e d b y using th e C M O S p ro c e s s . It a u to m a tic a lly s te p s th e v o lta g e up an d d o w n a c c o rd in g to th e input v o lta g e .


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    S-8430AF yp100 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor BCW72LT1 NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter- Base Voltage Symbol Value Unit VCEO 45 Vdc v CBO 50 Vdc Ve b o 5.0 Vdc 'c 100 mAdc Collector Current — Continuous


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    BCW72LT1 -236A PDF