TRANSISTOR D 2627
Abstract: Telefunken Electronic transistor D 2624 transistor k 2628 Telefunken 105 transistor 2all CB-108 ic 546 DIN 41872 transistor BU 104
Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage
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r-33-13
T-33-13
2380T
TRANSISTOR D 2627
Telefunken Electronic
transistor D 2624
transistor k 2628
Telefunken 105
transistor 2all
CB-108
ic 546
DIN 41872
transistor BU 104
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TRANSISTOR D 2627
Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage
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r-33-13
T0126
15A3DIN
TRANSISTOR D 2627
transistor D 2624
transistor k 2628
TRANSISTOR 1300 3B
on 2518 transistor
TCA 321
Telefunken Electronic
12A3
T0126
BU546
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transistor D 2624
Abstract: No abstract text available
Text: MOT OROL A SC XSTRS/R 4bE D F • b3b725H 0GT4b4b Ô « N O T t T -3 3 -C R M O TO ROLA SEMICONDUCTOR MRF427 TECHNICAL DATA MRF427A The R F Li ne 25 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r high-voltage a p p lic a tio n s as a high -p o w e r
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b3b725H
MRF427
MRF427A
MRF427,
transistor D 2624
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pepi c
Abstract: TRANSISTOR D 2627 pepi cr MRF427 transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469
Text: MOTOROLA SC XSTRS/R 4bE F D m b3b7254 00T4b4b ô T - 3 3 "O S MOTOROLA SEM ICONDUCTOR MRF427 MRF427A TECHNICAL DATA The RF Line 25 W ( P E P ) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . designed p r im a r ily fo r hig h -v o lta g e a p p lic a tio n s as a h ig h -p o w e r
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b3b7254
00T4b4b
T-33-cR
MRF427
MRF427A
MRF427,
T-33-09
pepi c
TRANSISTOR D 2627
pepi cr
transistor D 2624
arco 469 trimmer capacitor
arco TRIMMER capacitor 463
s49 transistor
pepi
TRIMMER capacitor 469
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MRF861
Abstract: l6sh
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor D e s ig n e d fo r 2 4 V olt U H F la rg e - s ig n a l, c o m m o n e m itte r, c la s s A lin e a r a m p lifie r a p p lica tio n s in in d u stria l and c o m m e rc ia l e q u ip m e n t o p e ra tin g in the
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MRF861
l6sh
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2SK470
Abstract: 2sk47 btt4
Text: SEC j i i r / W Z M O S Field E ffe ct P o w e r T ra n sisto r J _ 2SK470 v ^ — MOS F E T X f m I i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 7 0 ii, F E T t\ X f y f > d c > ;< — i 7 • - t — • 'J 1 / —
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2SK470
2SK470Ã
PWS10
2SK470
2sk47
btt4
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2SK163
Abstract: 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466
Text: NEC j m = t= r iv r x J u n c t io n Field E ffe c t T r a n s is to r A 2SJ44 V 3 h = 7 > i> * 9 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Low Noise Amplifier ^ • » 0 / P A C K A G E D IM EN SIO N S ^/FEATU RES Unit : mm O ¡15I f EE, H i g h
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02SK163
SC-43B
545tS4i8
2SK163
2sk163 transistor
Free 9014
transistor 2sk163
PA33
SS 9014
TC-5466
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TC-6252
Abstract: TC6252 WJ M64
Text: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m
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Cycled50
82cMS25Ã
TC-6252
TC6252
WJ M64
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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TRANSISTOR D 2627
Abstract: SG3627 20ii2 SG3627J SG1627J
Text: SG1627/SG2627/SG3627 SILICON DUAL HIGH-CURRENT OUTPUT DRIVER LINEAR INTEG RATED CIRCUITS DESCRIPTION FEATURES The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each
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SG1627/SG2627/SG3627
500mA
300ns
SG1524
SG1627
MIL-STD-883
SG1627
500mA
SG1627J/883B
SG1627J
TRANSISTOR D 2627
SG3627
20ii2
SG3627J
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Untitled
Abstract: No abstract text available
Text: BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-200PB
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transistor j449
Abstract: BLF7G27L-200PB TRANSISTOR BV 32 j449 transistor
Text: BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-200PB
transistor j449
BLF7G27L-200PB
TRANSISTOR BV 32
j449 transistor
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BLF8G27LS-140V
Abstract: SOT1120B
Text: BLF8G27LS-140V Power LDMOS transistor Rev. 2 — 27 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz.
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BLF8G27LS-140V
Excelle10
BLF8G27LS-140V
SOT1120B
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Untitled
Abstract: No abstract text available
Text: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF7G27L-135
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BLF8G27LS-140V
Abstract: No abstract text available
Text: BLF8G27LS-140V Power LDMOS transistor Rev. 1 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1.
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BLF8G27LS-140V
BLF8G27LS-140V
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TRANSISTOR D 2627
Abstract: No abstract text available
Text: SG1627ISG2627/SG3627 SILICON Œ N E ^L LINEAR INTEG RATED CIRCUITS DUAL HIGH-CURRENT OUTPUT DRIVER D E S C R IP T IO N FEA TU R ES The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each
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SG1627ISG2627/SG3627
500mA
300ns
SG1524
MIL-STD-883
SG1627
16-PIN
SG1627J/883B
SG1627J
SG2627J
TRANSISTOR D 2627
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SG3627
Abstract: TRANSISTOR D 2627 SG1627J SG1627 SG3627J constant current source with 500mA SG2627 SG1627J/883B SG1524 Scans-003836
Text: SG1627/SG2627/SG3627 SILIC O N GENERÄL LINEAR INTEGRATED CIRCUITS DUAL HIGH-CURRENT OUTPUT DRIVER D E S C R IP T IO N FE A TU R E S The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each
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SG1627/SG2627/SG3627
SG1627
500mA
16-PIN
SG1627J/883B
SG1627J
SG2627J
SG3627J
SG3627
TRANSISTOR D 2627
SG3627J
constant current source with 500mA
SG2627
SG1524
Scans-003836
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-140 Power LDMOS transistor Rev. 1 — 28 March 2013 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance
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BLF8G27LS-140
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-140 Power LDMOS transistor Rev. 2 — 5 June 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF8G27LS-140
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 2 — 22 April 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
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BLF8G27LS-150V;
BLF8G27LS-150GV
BLF8G27LS-150V
8G27LS-150GV
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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IRF7341 application note
Abstract: ccfl driver schematic lcd ccfl driver schematic AME9000 pwm variable frequency drive circuit diagram chop ccfl driver MARKING EA1 star delta connection LOGIC wiring circuit diagram 24PIN AME9001
Text: AME, Inc. CCFL Backlight Controller AME9001 n General Description n Pin Configuration The AME9001 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps CCFL . Specifically the AME9001 drives 3 external MOSFETs that, in turn, drive a wirewound transformer
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AME9001
AME9001
24PIN
2023-DS9001-A
IRF7341 application note
ccfl driver schematic
lcd ccfl driver schematic
AME9000
pwm variable frequency drive circuit diagram chop
ccfl driver
MARKING EA1
star delta connection LOGIC wiring circuit diagram
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ccfl backlight controller schematic
Abstract: AME9001AETH IRF7341 application note AME9000 MARKING EA1 circuit fluorescent tube 24v pwm variable frequency drive circuit diagram chop 24PIN 2N3906 AME9001
Text: AME, Inc. CCFL Backlight Controller AME9001 n General Description n Pin Configuration The AME9001 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps CCFL . Specifically the AME9001 drives 3 external MOSFETs that, in turn, drive a wirewound transformer
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AME9001
AME9001
24PIN
2023-DS9001-B
ccfl backlight controller schematic
AME9001AETH
IRF7341 application note
AME9000
MARKING EA1
circuit fluorescent tube 24v
pwm variable frequency drive circuit diagram chop
2N3906
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