telefunken IC 121
Abstract: No abstract text available
Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure
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D-74025
telefunken IC 121
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log sheet air conditioning
Abstract: ZXT849K ZXT849KTC
Text: ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK SUMMARY BVCEO = 30V : RSAT = 33m typical; IC = 7A DESCRIPTION Packaged in the D-Pak outline this high current high performance 30V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits
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ZXT849K
ZXT849KTC
25oad
log sheet air conditioning
ZXT849K
ZXT849KTC
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ZXT953K
Abstract: ZXT953KTC of ZXT953KTC
Text: ZXT953K 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high performance 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits
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ZXT953K
-100V
ZXT953KTC
ZXT953K
ZXT953KTC
of ZXT953KTC
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ZXT951K
Abstract: ZXT951KTC ZXT951 Bv 42 transistor
Text: ZXT951K 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -60V : RSAT = 53m typical; IC = -6A DESCRIPTION Packaged in the D-PAK outline this high current high performance 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits
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ZXT951K
ZXT951KTC
ZXT951K
ZXT951KTC
ZXT951
Bv 42 transistor
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Untitled
Abstract: No abstract text available
Text: ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various
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ZXT1053AK
ZXT1053AKTC
522-ZXT1053AKTC
ZXT1053AKTC
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Untitled
Abstract: No abstract text available
Text: ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK SUM M ARY BV CEO = 30V : RSAT = 33m typical; IC = 7A DESCRIPTION Packaged in the D-Pak outline this high current high perform ance 30V NPN transistor offers low on state losses m aking it ideal for use in DC-DC circuits
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ZXT849K
T849KTC
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ZXT790AK
Abstract: ZXT790AKTC ZXT790A
Text: ZXT790AK 40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = -40V : RSAT = 83m ; IC = -3A DESCRIPTION Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power
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ZXT790AK
ZXT790AKTC
ZXT790A
ZXT790AK
ZXT790AKTC
ZXT790A
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A 673 C2 transistor
Abstract: npn 2222 transistor inverter design using plc log sheet air conditioning NY TRANSISTOR MAKING ZXT1053AK ZXT1053AKTC
Text: ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various
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ZXT1053AK
ZXT1053AKTC
A 673 C2 transistor
npn 2222 transistor
inverter design using plc
log sheet air conditioning
NY TRANSISTOR MAKING
ZXT1053AK
ZXT1053AKTC
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ZXT690BK
Abstract: ZXT690BKTC
Text: ZXT690BK 45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = 45V : RSAT = 77m ; IC = 3A DESCRIPTION Packaged in the D-Pak outline this high gain 45V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power
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ZXT690BK
ZXT690BKTC
ZXT690B
ZXT690BK
ZXT690BKTC
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Untitled
Abstract: No abstract text available
Text: ZXT953K 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN D-PAK SUM M ARY BV CEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high perform ance 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits
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ZXT953K
-100V
T953KTC
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Untitled
Abstract: No abstract text available
Text: ZXT951K 60V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN D-PAK SUM M ARY BV CEO = -60V : RSAT = 53m typical; IC = -6A DESCRIPTION Packaged in the D-PAK outline this high current high perform ance 60V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits
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ZXT951K
T951KTC
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Untitled
Abstract: No abstract text available
Text: ZXT790AK 40V PNP M EDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUM M ARY BV CEO = -40V : RSAT = 83m ; IC = -3A DESCRIPTION Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power
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ZXT790AK
ZXT790AKTC
ZXT790A
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BUX45
Abstract: transistor et 460
Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection
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CB-19
BUX45
transistor et 460
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transistor NEC D 822 P
Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters
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2SC4226
2SC4226
SC-70
2SC4226-T1
2SC4226-T2
transistor NEC D 822 P
transistor number D 2498
702 mini transistor
NEC D 822 P
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear
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DD3T433
BLW83
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BLX13
Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested
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711005t.
BLX13
r-33-//
BLX13
BLX13A
C 3311 transistor
HF band power amplifier
philips 3h1
transistor f
PH ON 823
philips Fxc 3 b
SOT-56
transistor c 1971
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transistor Siemens 14 S S 92
Abstract: 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B
Text: ESC D • fl23StiQS 0004773 1 MS I E G , Programmable Unijunction Transistor BRY 56 7” ^ o f SIEMENS AKTIENGESELLSCHAF Programmable silicon planar unijunction transistor in TO 92 plastic package 10 A 3 DIN 41868 . K8max Type Ordering code BRY561» BRY 56 A
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fl23StiQS
BRY561»
Q68000-A803
Q68000-A803-S1
Q68000-A803-S2
Q68000-A803-S3
23SbGS
02BStaQS
GG04777
BRY56
transistor Siemens 14 S S 92
2sc 3150 transistor
BRY 56 C
Bry 56
BRY 66 A
BRY 56 B
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DTA143XS
Abstract: No abstract text available
Text: h DTA143XU/DTA143XK/DTA143XS/DTA143XF DTA143XL/DTA143XA/DTA143XV > v ^ £ / T ransistors D TA 143X U /D T A 143XK /D TA 143XS D TA 143XF/D TA 143XL/D TA 143XA DTA143XV h7>y'X^ }£iaF*3loh7>y'X^ h -7 > y 7. £ X -f " j /Transistor Switch Digital Transistors (Includes Resistors)
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DTA143XU/DTA143XK/DTA143XS/DTA143XF
DTA143XL/DTA143XA/DTA143XV
143XK
143XS
143XF/D
143XL/D
143XA
DTA143XV
DTA143XS
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LA 7693
Abstract: ic CD 4047 7737 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain
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2SC5014
2SC5014-T1
2SC5014-T2
LA 7693
ic CD 4047
7737 transistor
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transistor Siemens 14 S S 92
Abstract: CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor
Text: ESC D • 023StiOS 0004773 1 M S Ï E G , Programmable Unijunction Transistor BRY 56 T -3 - ^ - o f SIEMENS AKTIEN6ESELLSCHAF Programmable silicon planar unijunction transistor in TO 9 2 plastic package 10 A 3 DIN 4 1 8 6 8 . H8m ax Type O rdering cod e
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23SlaOS
BRY561'
Q68000-A803
Q68000-A803-S1
068000-A803-S2
Q68000-A803-S3
DQ04777
BRY56
transistor Siemens 14 S S 92
CBV2
BRY56
Q68000-A803
Q68000-A803-S1
Q68000-A803-S3
IW transistor
BRY 56 A
Programmable unijunction
D 823 transistor
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2SK822
Abstract: TD-4002 TD400
Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK822 DESCRIPTION The 2SK822 is N-channel MOS Field E ffect Power Transistor designed fo r sw itching power supplies, DC-DC PACKAGE D IM EN SIO N S in m illim e te rs (inches)
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2SK822
2SK822
1987M
TD-4002
TD400
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from
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2SC5010
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