Transistor C G 774 6-1
Abstract: transistor 2N4033 2N4033
Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53
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2N4033
Transistor C G 774 6-1
transistor 2N4033
2N4033
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MTD8000M3B-T
Abstract: No abstract text available
Text: Photo Transistor Product No: M T D 8 000M3B-T Peak Sensitivity Wavelength: 880nm The MTD8000M3B-T is a photo transistor in a ceramic package. It is well suited for high reliability and high sensitivity applications. FEATURES APPLICATIONS > High Reliability in Demanding Environments
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000M3B-T
880nm
MTD8000M3B-T
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tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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BD135
Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
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MRF20030/D
MRF20030
BD135
BD136
MJD47
MRF20030
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ
MOTOROLA 727
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) 4.2+/-0.2 (d) 5.6+/-0.2 6.2+/-0.2 (3.6) 8.0+/-0.2 0.65+/-0.2 (b) RD09MUP2 is a MOS FET type transistor
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
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Untitled
Abstract: No abstract text available
Text: AU K CORP. Photo Transistor KDT-6315A Description The KDT-6315A is a high-sensitivity & surface mount type silicon phototransistor. It’s ideal for various kinds of optical transistor such as touch panels for C/D, ATM, Car navigation system and even AV Instrument and
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KDT-6315A
KDT-6315A
Emitter-Collec80
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Untitled
Abstract: No abstract text available
Text: AU K CORP. Photo Transistor KST-0315A Description The KST-0315A is a high-sensitivity & surface mount type silicon phototransistor. It’s ideal for various kinds of optical transistor such as touch panels for C/D, ATM, Car navigation system and even AV Instrument and
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KST-0315A
KST-0315A
1000lx,
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0315a
Abstract: KST-0315A SmD TRANSISTOR av
Text: AUK CORP. Photo Transistor KST-0315A Description The KST-0315A is a high-sensitivity & surface mount type silicon phototransistor. It’s ideal for various kinds of optical transistor such as touch panels for C/D, ATM, Car navigation system and even AV Instrument and
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KST-0315A
KST-0315A
1000lx,
0315a
SmD TRANSISTOR av
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TO-92 CASE MPSA06
Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06
Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70
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MPSA06
TO-92 CASE MPSA06
F 9016 transistor
7333 A
MPSa06 equivalent
transistor MPSA06
transistor 7333
MPSA06 transistor
MPSA06
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7333 A
Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333
Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70
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MPSA06
7333 A
transistor MPSA06
MPSA06
npn 9016 transistor
transistor 7333
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bf199 equivalent
Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF
Text: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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BF199
bf199 equivalent
BF199
transistor NPN BF199
bf199 transistor
BF199 RF
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bf199 equivalent
Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
Text: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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BF199
bf199 equivalent
bF199 transistor
BF199
F 9016 transistor
transistor 9016 npn
03 transistor
data bf199
ic 9400
BF199 RF
transistor NPN BF199
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philips 3595
Abstract: BLX69 BLX69A 60306 cm 3593
Text: 86D 0 1790 D T i N AMER P H I L I P S / D I S C R E T E ObE D • BLX69A bbSBTBl 0014028 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V, The transistor is resistance stabilized and is
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BLX69A
philips 3595
BLX69
BLX69A
60306
cm 3593
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NPN transistor 2n2222 Zin
Abstract: 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1
Text: O rder th is data sheet by MRF858/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e MRF858 NPN Silicon RF Power Transistor M otorola P referre d D evice CLASS A 8 00-960 MHz 3.6 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF858/D
MK145BP
2PHX33729Q-0
NPN transistor 2n2222 Zin
2N2222 npn transistor
2N2222 transistor SOA
358E-06
NT 407 F TRANSISTOR TO 220
2N2222 motorola
ATIC 59 C1
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D b b s a ^ i O D 1S171 a - - DEVELOPMENT DATA 11 This data sheet contains advance information and specifications are subject to change without notice. RX1011B350Y T ? 3 3 ' I G - PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C
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1S171
RX1011B350Y
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motorola AN938
Abstract: MRF567 mrf56
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line 1.5 W 870 M H z RF LOW POWER TRANSISTOR NPN SILICON RF LOW POWER TRANSISTOR N P N SILICON . . . d e s ig n e d p rim a rily fo r w id e b a n d large s ig n a l p redrive r stages in the 800 M H z fre q u en cy range.
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MRF557
motorola AN938
MRF567
mrf56
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BFX89
Abstract: case BFX89 transistor IR 652 P
Text: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.
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bbS3T31
BFX89
7Z08812
7Z08857
7Z08814
T-37-15
7Z08815
BFX89
case BFX89
transistor IR 652 P
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Untitled
Abstract: No abstract text available
Text: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,
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bbS3T31
LAE4001R
bt53131
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microstripline
Abstract: acrian RF POWER TRANSISTOR 8mob5 VCC125 ACRIAN transistor 835 A1W TRANSISTOR 8008-6 8MOB15 8MOB25
Text: ^ 0 1 8 2 .9 9 8 ':, A C R I AN A Ï NC*; GENERAL »E D 0 0 1 3 S ti D E SC R IP TIO N The 8MOB25 is an internally matched, common base transistor capable of providing 25 Watts of CW RF output power at 835 MHz. This transistor is specifically designed for cellular radio amplifier
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000135b
8MOB25
1-10PF
microstripline
acrian RF POWER TRANSISTOR
8mob5
VCC125
ACRIAN
transistor 835
A1W TRANSISTOR
8008-6
8MOB15
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Untitled
Abstract: No abstract text available
Text: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is
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BLX69A
bb53c
bb53131
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thomson rf transistor
Abstract: thomson microwave transistor sd1013
Text: 1 S G S-¡-THOMSON DSC D | TTETEB? Q O D Q ltiE r T- 5 ? ' 0 . 7 SOLID STATE MICROWAVE SD1013 THOMSON-CSF COMPONENTS CORPORATION Montgomery ville, PA 18936 • 215 362-8500 ■ TW X 510-661-7299 10 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD1013 is an epitaxial silicon NPN-planar transistor
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SD1013
SD1013
thomson rf transistor
thomson microwave transistor
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RX1011B350Y
Abstract: broad-band Microwave Class-C Transistor Amplifiers
Text: N AMER P H I L I P S / D I S C R E T E bbSB^l ObE D 0 0 1 5 1 7 ^ fi D EVELOPM EN T DATA RX1011B350Y T h is data sheet contains advance inform ation and specifications are subject to change w ith out notice. r-f 33-/S" PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C
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RX1011B350Y
T-33-
7Z23071
RX1011B350Y
broad-band Microwave Class-C Transistor Amplifiers
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mouse Phototransistor
Abstract: BA0B WPT-352PM
Text: Waitrony Photo Transistor M odule No.: W PT-352PM 1. G eneral Description: D im ensions The WPT-352PM is a high sensitivity NPN silicon photo transistor with 2-phase output, which is mounted in a compact black epoxy package. 1. EMITTER P T R B 2. COLLECTOR (COM)
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WPT-352PM
WPT-352PM
mouse Phototransistor
BA0B
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