transistor D1140
Abstract: D1140 2SD1140
Text: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
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2SD1140
transistor D1140
D1140
2SD1140
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D1140
Abstract: D1140 transistor diagram 2SD1140 transistor D1140 d1140 equivalent component
Text: 2SD1140 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
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2SD1140
D1140
D1140 transistor diagram
2SD1140
transistor D1140
d1140 equivalent component
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Untitled
Abstract: No abstract text available
Text: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
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2SD1140
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transistor D1140
Abstract: D1140 2SD1140
Text: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
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2SD1140
transistor D1140
D1140
2SD1140
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D1140
Abstract: transistor D1140 2SD1140
Text: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
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2SD1140
D1140
transistor D1140
2SD1140
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transistor D1140
Abstract: D1140 2SD1140
Text: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
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2SD1140
transistor D1140
D1140
2SD1140
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transistor D1140
Abstract: No abstract text available
Text: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
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2SD1140
O-92MOD
transistor D1140
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2SJ462
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings unit : mm The 2SJ462 is a switching device which can be driven directly 5.7 ±0.1 2.0 ±0.2 by an IC operating at 3 V.
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2SJ462
2SJ462
C10535E
MEI-1202
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PA1800
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1800 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1800 is a switching device which can be driven directly by a 4.0-V power source. The µPA1800 features a low on-state resistance and
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PA1800
PA1800
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D1151
Abstract: D207L
Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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O-126
2SC3679
2SC3680
BU508AS
BU508A
2SC4747
2SC4430
2SC3996
2SC3997
2SC3998
D1151
D207L
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D287A
Abstract: SH120 Ga 81 SR118
Text: HD66300T Horizontal Driver for TFT-Type LCD Color TV Description Features The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. • LCD drive outputs: 120
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HD66300T
HD66300T
D287A
SH120
Ga 81
SR118
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C10535E
Abstract: C10943X C11531E MEI-1202 PA1753 TEA-1035
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1753 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is Dual N-Channel MOS Field Ef- in: millimeter fect Transistor designed for power management application of notebook computers, and Li-ion bat-
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PA1753
C10535E
C10943X
C11531E
MEI-1202
PA1753
TEA-1035
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hd61105
Abstract: no2rg SR119 msf1 D113 D114 D115 D116 D117 D118
Text: HD66300T Horizontal Driver for TFT-Type LCD Color TV Description The HD66300T is a horizontal driver used for TFT-type (Thin Film Transistor) LCD color TVs. Specifically, it drives the drain bus signals of a TFT-type LCD panel. The HD66300T receives as input three video signals R, G, B, and their inverted signals 5, * and %.
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HD66300T
HD66300T
hd61105
no2rg
SR119
msf1
D113
D114
D115
D116
D117
D118
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TEB-528
Abstract: 2SJ462 C10535J TEB-537 MEI-603
Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SJ462 PチャネルMOS FET スイッチング用 2SJ462はPチャネル縦形MOS FETで，3 V電源系ICの出力による直接駆動が可能なスイッチング素子です。
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2SJ462
2SJ462PMOS
29MAX.
19MAX.
D11449JJ1V0DS00
108-0171NEC
46017NEC
54024NEC
TEB-528
2SJ462
C10535J
TEB-537
MEI-603
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D304X
Abstract: D4515 d4515 transistor d209l D207L D1151 BUS14 D208L transistor D207L transistor D208L
Text: Products Search Home About Us Product News Application Message to Us Contact Us Power Supply| Lighting| Appliances| Automotive| Products Category You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode
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O-126
O-126
D1160
2SC3320
BUS13
D211L
2SC2623
2N6678
D304X
D4515
d4515 transistor
d209l
D207L
D1151
BUS14
D208L
transistor D207L
transistor D208L
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d4515
Abstract: d209l transistor D208L
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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O-126
D1148D
D1151
D1160
D1173A
BUT11A
D4515
2SC3320
BUS13
d4515
d209l
transistor D208L
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UPA1800
Abstract: UPA1800GR-9JG NEC *50A nec 10D
Text: DATA SHEET MOS Held Effect Transistor UPA1800 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The uPA1800 is a switching device which can be driven directly by a 4.0V power source. The uPA1800 features a low on-state resistance and excellent
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UPA1800
27mQMAX.
UPA1800GR-9JG
NEC *50A
nec 10D
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings unit : mm The 2SJ462 is a switching device which can be driven directly 5.7 ±0.1 by an 1C operating at 3 V. 1.5 ±0.1
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2SJ462
2SJ462
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / M OS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings unit ; mm The 2S J462 is a switching device which can be driven directly 5.7 ± 0 J by an 1C operating at 3 V,
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2SJ462
2SJ462
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A1022
Abstract: D601A c2480 C4561 S-Mini D1938 transistor A1022 D602A XN06506
Text: Transistors Selection Guide by Applications and Functions •5-Pin S-Mini Type (D8)*5-Pin Mini Type (D15)*6-Pin S-Mini Type (D9)*6-Pin Mini Type (D16) Package Transistor, FET # Transistors (XN: 5- and 6-Pin Mini Type Package, XP: 5- and 6-Pin S-Mini Type Package)
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XN6501
XP6501
D601A
C4444
C2480
C3904
C4561
XN6543
C2404
D1149
A1022
D601A
S-Mini
D1938
transistor A1022
D602A
XN06506
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Untitled
Abstract: No abstract text available
Text: DTD114EK/DTD114ES/DTD114EF DTD114EL/DTD114EA/DTD114EV h ~p > v X $ /T ra n s is to rs DTD114EK/DTD114ES/DTD114EF DTD114EL/DTD114EA/DTD114EV J f i i i a r t j i t Is 's v 7* $ h 7 > y ^ $ ^ ,f 7 f ,/Transistor Switch Digital Transistors (Includes Resistors)
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DTD114EK/DTD114ES/DTD114EF
DTD114EL/DTD114EA/DTD114EV
DTD114E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA1753 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dua! N-Channe! M O S Field Ef fect Transistor designed for power management application of notebook computers, and Li-ion bat
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uPA1753
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D1915
Abstract: D1915 Transistors TRANSISTOR D1915 c3904 D1915 transistor B709A A1022 xp5555 XN4501 XP1201
Text: Transistors Selection Guide by Applications and Functions •5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)
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XN1401
XP1401
XN1501
XP1501
XN1601
XP1601
XN1B301
XP1B301
XN1C301
XP1C301
D1915
D1915 Transistors
TRANSISTOR D1915
c3904
D1915 transistor
B709A
A1022
xp5555
XN4501
XP1201
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D1915
Abstract: D1915 Transistors d1915f TRANSISTOR D1915 D1915 transistor XN1111 mini type (D7)
Text: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)
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XN1111
XP1111
XN1112
XP1112
XN1113
XP1113
XN1114
XP1114
XN1115
XP1115
D1915
D1915 Transistors
d1915f
TRANSISTOR D1915
D1915 transistor
mini type (D7)
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