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    TRANSISTOR D138 Search Results

    TRANSISTOR D138 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D138 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking TG

    Abstract: PA1900
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1900 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1900 is a switching device which can be driven 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5 V power source.


    Original     		PDF PA1900 PA1900 marking TG

    D1380

    Abstract: PA1900
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1900 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1900 is a switching device which can be driven 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5 V power source.


    Original     		PDF PA1900 PA1900 D1380

    D1380

    Abstract: PA1912 SC-95 UPA1912TE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5-V power source. +0.1 The µPA1912 features a low on-state resistance and excellent


    Original     		PDF PA1912 PA1912 D1380 SC-95 UPA1912TE

    D1380

    Abstract: 2SK3107 SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 0.1 +0.1 –0.05 0.3 ± 0.05 2.5-V power source.


    Original     		PDF 2SK3107 2SK3107 SC-75 D1380

    2SK3107

    Abstract: SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3107 is a switching device which can be driven directly by a 0.3 +0.1 –0 2.5 V power source. 0.15 +0.1


    Original     		PDF 2SK3107 2SK3107 SC-75 SC-75

    D13806

    Abstract: UPA1912TE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5-V power source. +0.1 The µPA1912 features a low on-state resistance and excellent


    Original     		PDF PA1912 PA1912 D13806 UPA1912TE

    2SJ559

    Abstract: SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SJ559 is a switching device which can be driven directly by a 0.3 +0.1 –0 2.5 V power source. 0.15 +0.1


    Original     		PDF 2SJ559 2SJ559 SC-75 SC-75

    D1380

    Abstract: 2SK3107 SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3107 is a switching device which can be driven directly by a 0.3 +0.1 –0 2.5 V power source. 0.15 +0.1


    Original     		PDF 2SK3107 2SK3107 SC-75 D1380 SC-75

    D1380

    Abstract: Nec 658
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1814 is a switching device which can be driven directly by a 4 V power source. The µPA1814 features a low on-state resistance and


    Original     		PDF PA1814 PA1814 D1380 Nec 658

    UPA1856GR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and


    Original     		PDF PA1856 PA1856 UPA1856GR

    PA1914

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance


    Original     		PDF PA1914 PA1914

    PA1815

    Abstract: UPA1815GR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and


    Original     		PDF PA1815 PA1815 UPA1815GR

    UPA1856GR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and


    Original     		PDF PA1856 PA1856 UPA1856GR

    PA1856

    Abstract: PA1856GR-9JG UPA1856GR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and


    Original     		PDF PA1856 PA1856 PA1856GR-9JG UPA1856GR

    UPA1856GR

    Abstract: PA1856 PA1856GR-9JG
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5 V power source. The µPA1856 features a low on-state resistance and


    Original     		PDF PA1856 PA1856 UPA1856GR PA1856GR-9JG

    D1380

    Abstract: 2SJ559
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is


    Original     		PDF 2SJ559 2SJ559 D1380

    PA1913

    Abstract: UPA1913TE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5 V power source • Low on-state resistance


    Original     		PDF PA1913 PA1913 UPA1913TE

    D1380

    Abstract: PA1856 PA1856GR-9JG UPA1856GR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and


    Original     		PDF PA1856 PA1856 D1380 PA1856GR-9JG UPA1856GR

    D1380

    Abstract: PA1815 UPA1815GR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and


    Original     		PDF PA1815 PA1815 D1380 UPA1815GR

    PA1912

    Abstract: UPA1912TE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1912 features a low on-state resistance and excellent 2.8 ±0.2 switching characteristics, and is suitable for applications such


    Original     		PDF PA1912 PA1912 UPA1912TE

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR ¿


    OCR Scan     		PDF uPA1804 on-s30 D13868EJ1V0DS00

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 9 0 0 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1900 is a switching device which can be driven directly by a 2.5 V power source.


    OCR Scan     		PDF uPA1900 D13809EJ1V0DS00 PA1900

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 6 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1856 is a switching device which can be driven directly by a 2.5 V power source.


    OCR Scan     		PDF uPA1856 D13808EJ1V0DS00 PA1856 13808EJ1V 0DS00

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 9 1 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1914 is a switching device which can be driven directly by a 4 V power source.


    OCR Scan     		PDF JUPA1914 D13810EJ1V0DS00 PA1914