90n03
Abstract: NP90N03VUG NP90N03VUG-E1-AY DIODE MARKING code UG 45
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N03VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N03VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N03VUG-E1-AY NP90N03VUG-E2-AY
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NP90N03VUG
NP90N03VUG
NP90N03VUG-E1-AY
NP90N03VUG-E2-AY
O-252
AEC-Q101ems,
90n03
NP90N03VUG-E1-AY
DIODE MARKING code UG 45
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90n04
Abstract: NP90N04VUG 90n04 UG NP90N04V DIODE MARKING code UG 45
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N04VUG-E1-AY NP90N04VUG-E2-AY
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NP90N04VUG
NP90N04VUG
NP90N04VUG-E1-AY
NP90N04VUG-E2-AY
O-252
AEC-Q101ems,
90n04
90n04 UG
NP90N04V
DIODE MARKING code UG 45
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90N055
Abstract: NP90N055 NP90N055VUG NP90N055VUG-E1-AY NP90N055VUG-E2-AY MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR DIODE MARKING code UG 45
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N055VUG-E1-AY NP90N055VUG-E2-AY
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NP90N055VUG
NP90N055VUG
NP90N055VUG-E1-AY
NP90N055VUG-E2-AY
O-252
90N055
NP90N055
NP90N055VUG-E1-AY
NP90N055VUG-E2-AY
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
DIODE MARKING code UG 45
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60n03
Abstract: 60N03 m 60N03 UG 60N03 to NP60N03S NP60N03SUG D19547EJ1V0DS
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP60N03SUG-E1-AY NP60N03SUG-E2-AY
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NP60N03SUG
NP60N03SUG
NP60N03SUG-E1-AY
NP60N03SUG-E2-AY
O-252
AEC-Q101ems,
60n03
60N03 m
60N03 UG
60N03 to
NP60N03S
D19547EJ1V0DS
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K4201
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)
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2SK4201
2SK4201
2SK4201-S19-AY
O-220
K4201
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2SK4201
Abstract: 2SK4201-S19 2SK42
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)
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2SK4201
2SK4201
2SK4201-S19-AY
O-220
2SK4201-S19
2SK42
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Untitled
Abstract: No abstract text available
Text: S T U/D1955NL S amHop Microelectronics C orp. Dec 31,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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U/D1955NL
O-252
O-251
O-252AA
O-252
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Untitled
Abstract: No abstract text available
Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.
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U/D1955NL
O-252
O-251
O-252AA
Tube/TO-252
O-252
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D1955NL
Abstract: D1955
Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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U/D1955NL
O-252
O-251
O-252AA
Tube/TO-252
O-252
D1955NL
D1955
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Untitled
Abstract: No abstract text available
Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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U/D1955NL
O-252
O-251
O-252AA
Tube/TO-252
O-252
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Untitled
Abstract: No abstract text available
Text: S T U/D1955NL S amHop Microelectronics C orp. Oct 07,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 55@ V G S = 10V
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U/D1955NL
O-252
O-251
O-252AA
O-252
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2SK4213
Abstract: 2SK421 2SK4213-ZK 2SK42 2sk4213-zk-e1-ay
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
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2SK4213
2SK4213
2SK4213-ZK-E1-AY
2SK4213-ZK-E2-AY
2SK421
2SK4213-ZK
2SK42
2sk4213-zk-e1-ay
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2SK4212
Abstract: 2SK4212-ZK-E1-AY 2SK421 2SK4212-ZK
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4212 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
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2SK4212
2SK4212
2SK4212-ZK-E1-AY
2SK4212-ZK-E2-AY
2SK4212-ZK-E1-AY
2SK421
2SK4212-ZK
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transistor D195
Abstract: 3-pin D195 transistor 2n3906 equivalent transistor S1201 S1202 S3019 d195 transistor
Text: Revision 1.0 - November 22, 2000 APPLICATION NOTE S3019 with 1 x 9 Lucent Fiber Optics and S1202 NILE/S1201 CONGO Introduction The AMCC S3019 SONET/SDH transceiver and clock recovery chip is a fully integrated serialization/deserialization SONET STS-12/STM-4 622.08 Mbps and STS-3/STM-1 (155.52 Mbps) interface device. This device is
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S3019
S1202
NILE/S1201
STS-12/STM-4
STS-12/STM-4
D195/R319
transistor D195
3-pin D195 transistor
2n3906 equivalent transistor
S1201
d195 transistor
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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90n03
Abstract: NP90N03VUG
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NP90N055
Abstract: NP90N055VUG NP90N055VUG-E1-AY
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK4201
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK4201
Abstract: 2SK4201-S19
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TC518512
Abstract: transistor D195
Text: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er
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TC518512PL/FL/FTL/rRL-70LV/80LV/10LV
TheTC518512PL
TC518512PL
TC518512PL-LV
D-194
TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV
D-195
TC518512
transistor D195
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trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4L3052
4L3056
wiring diagram audio amplifier ic 6283
germanium
Transistor Shortform Datasheet & Cross References
halbleiter index transistor
2N5160 MOTOROLA
transistor ITT 2907
1N5159
2N 5574
inverter welder 4 schematic
diagrams de ic lg 8838
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