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    TRANSISTOR D2525 Search Results

    TRANSISTOR D2525 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D2525 Datasheets Context Search

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    TRANSISTOR D2525

    Abstract: 2sd2525 2SB1640 D2525
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640


    Original     		PDF 2SD2525 2SB1640 TRANSISTOR D2525 2sd2525 2SB1640 D2525

    TRANSISTOR D2525

    Abstract: D2525 2SB1640 2SD2525
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640


    Original     		PDF 2SD2525 2SB1640 TRANSISTOR D2525 D2525 2SB1640 2SD2525

    TRANSISTOR D2525

    Abstract: D2525 2SD2525 2SB1640
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) · Complementary to 2SB1640


    Original     		PDF 2SD2525 2SB1640 TRANSISTOR D2525 D2525 2SD2525 2SB1640

    TRANSISTOR D2525

    Abstract: d2525 2sd2525 2SB1640
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640


    Original     		PDF 2SD2525 2SB1640 TRANSISTOR D2525 d2525 2sd2525 2SB1640

    TRANSISTOR D2525

    Abstract: 2sd2525
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640


    Original     		PDF 2SD2525 2SB1640 2-10T1A TRANSISTOR D2525 2sd2525