oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A
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ZXTC4591AMC
ZXTD4591AM832
D-81541
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A
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ZXTC6720MC
ZXTDE4M832
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXCT6718MC ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A
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ZXCT6718MC
ZXTDB2M832
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TRANSISTOR blw97
Abstract: MGP705 4312 020 36640 BLW97 transistor d1 391 MLA876 SOT121B 101 Ceramic Disc Capacitors
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A,
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BLW97
SC08a
TRANSISTOR blw97
MGP705
4312 020 36640
BLW97
transistor d1 391
MLA876
SOT121B
101 Ceramic Disc Capacitors
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transistor gl 1117
Abstract: MGP485 Transistor gl 1117 B BLW60C IEC 320 C13 MSB056 MGP480
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification File under Discrete Semiconductors, SC08a March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW60C
SC08a
transistor gl 1117
MGP485
Transistor gl 1117 B
BLW60C
IEC 320 C13
MSB056
MGP480
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D313 amplifier
Abstract: No abstract text available
Text: UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier and switching applications. 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS SYMBOL VALUE UNIT
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O-220
QW-R203-001
D313 amplifier
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION
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ZXTC6717MC
ZXTDA1M832
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transistor D313
Abstract: d313 transistor D313 amplifier d313 D313 for amplifier transistor D313 DATA SHEET D313 E D313 equivalent TRANSISTOR NPN D313 d313 transistor data
Text: UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier and switching applications. 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS SYMBOL VALUE UNIT
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O-220
QW-R203-001
transistor D313
d313 transistor
D313 amplifier
d313
D313 for amplifier
transistor D313 DATA SHEET
D313 E
D313 equivalent
TRANSISTOR NPN D313
d313 transistor data
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transistor gl 1117
Abstract: trimmer 3-30 pf BLW60C MSB056
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial
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BLW60C
transistor gl 1117
trimmer 3-30 pf
BLW60C
MSB056
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BLW50F
Abstract: PHILIPS 4312 amplifier SOT123 Package HF power amplifier 4312 020 36640 MGP472
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW50F
SC08a
BLW50F
PHILIPS 4312 amplifier
SOT123 Package
HF power amplifier
4312 020 36640
MGP472
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4312 020 36640
Abstract: SOT121B SOT121 BLW97 PHILIPS 4312 amplifier TRANSISTOR blw97 3 pin TRIMMER capacitor 3 pin trimmer capacitors
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power
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BLW97
4312 020 36640
SOT121B
SOT121
BLW97
PHILIPS 4312 amplifier
TRANSISTOR blw97
3 pin TRIMMER capacitor
3 pin trimmer capacitors
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BD443
Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power
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BLW77
BD443
MGP540
BD228
BLW77
MGP523
RF POWER TRANSISTOR NPN vhf
philips ceramic disc capacitors 1500 pf
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power
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BLW96
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors built-in resistors EMD38 General purpose digital transistor (NPN+PNP) SOT-563 FEATURES DTr1:NPN digital transistor,DTC114Y DTr2:PNP digital transistor,DTA113Z Mounting possible with SOT-563 automatic mounting machines
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EMD38
OT-563
DTC114Y
DTA113Z
OT-563
-20mA
-10mA
100MHz
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BLW83
Abstract: philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and
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BLW83
BLW83
philips carbon film resistor
BY206
BD204
RF amplifiers in the HF and VHF
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BD443
Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power
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BLW76
BD443
BLW76
BD228
philips polystyrene capacitor
MGP501
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4312 020 36640
Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW86
SC08a
4312 020 36640
BLW86
HF power amplifier
ferroxcube wideband hf choke
PHILIPS 4312 amplifier
BY206
BY206 diode
SOt123 Package
22 pf trimmer capacitor datasheet
4 carbon wire resistor
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marking DA1
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A
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ZXTC6717MC
ZXTDA1M832
marking DA1
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BLW96
Abstract: PR37 RESISTOR RESISTOR pr37 MGP700 BLW96 HF power amplifier SOT121B
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW96
SC08a
BLW96
PR37 RESISTOR
RESISTOR pr37
MGP700
BLW96 HF power amplifier
SOT121B
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ZETEX complementary transistor PRODUCT LINE
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A
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ZXTC4591AMC
ZXTD4591AM832
D-81541
ZETEX complementary transistor PRODUCT LINE
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: mß/EREX KD221275A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DlISl D3 flinQtOfl Transistor Module 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD221275A7
Amperes/1200
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Untitled
Abstract: No abstract text available
Text: T • bb53131 □ D3333tl 330 HIAPX N APIER PHILIPS/DISCRETE b'lE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The
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bb53131
D3333t
BFT93W
OT323
BFT93W
BFT93.
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