2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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DIODE D29 -08
Abstract: diode D32 D-30 D-32 KD224575 DIODE D29
Text: f B M o m r KD224575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 75 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD224575
Amperes/600
DIODE D29 -08
diode D32
D-30
D-32
KD224575
DIODE D29
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transistor a12t
Abstract: transistor d30
Text: m N E R B C KD224575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 75 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD224575
Amperes/600
72THbEl
transistor a12t
transistor d30
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial
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0D31815
BFR91
BFR91/02
ON4186)
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PDF
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BUK456
Abstract: C055 T0220AB 7ts transistor
Text: N AflER P H I L I P S / D I S C R E T E b^E D • hbS3=J31 003Qb6S DST » A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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003Qb6S
BUK456-200A/B
T0220AB
BUK456
-200A
-200B
C055
7ts transistor
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2 SamHop Microelectronics Corp. Jul.16 2004 ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 4.5V
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STU/D3055L2
O-252
O-251
O-252AA
U/D3055L2
O-252
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V
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STU/D3055L2
O-252
O-251
O-252AA
U/D3055L2
Tube/TO-252
O-252
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d3055
Abstract: No abstract text available
Text: STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V
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STU/D3055L2-60
O-252
O-251
O-252AA
300ms
U/D3055L2-60
Tube/TO-252
d3055
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D3055
Abstract: CJD3055 cev code CJD2955
Text: Central CJD2955 PNP CJD3055 NPN Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CJD2955, CJ D3055types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a
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CJD2955
CJD3055
CJD2955,
D3055types
400mA
500mA,
0gg17m7
0DD174Ã
D3055
cev code
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PDF
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 10V
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STU/D3055L2
O-252
O-251
O-252AA
U/D3055L2
O-252
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PDF
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D306S
Abstract: No abstract text available
Text: STU/D306S SamHop Microelectronics Corp. Oct.16,2006 Ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS c ID RDS ON 7 40V 53A (mW) Super high dense cell design for low RDS(ON). Typ Rugged and reliable. @ VGS = 10V
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STU/D306S
O-252
O-251
O-252AA
U/D306S
Tube/TO-252
O-252
D306S
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PDF
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D30N03
Abstract: No abstract text available
Text: SDU/D30N03L SamHop Microelectronics Corp. JULY, 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS Super high dense cell design for low RDS ON . RDS(ON) (mW ) TYP ID Rugged and reliable. 11.5 @ VGS = 10V 30V TO-252 and TO-251 Package.
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SDU/D30N03L
O-252
O-251
O-252AA
D30N03
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Untitled
Abstract: No abstract text available
Text: STU/D300S SamHop Microelectronics Corp. Mar 05, 2007 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m W ) Max Rugged and reliable. 24 @ VGS = 10V 30V TO-252 and TO-251 Package.
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STU/D300S
O-252
O-251
O-252AA
U/D300S
Tube/TO-252
O-252
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PDF
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Untitled
Abstract: No abstract text available
Text: Green Product STU/D307S S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS ON (m Ω) Max 9.5 @ VGS=-10V 14 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON).
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STU/D307S
252AA(
O-252
O-252
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PDF
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.
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Original
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STU/D3055L2-60
O-252
O-251
O-252AA
300ms
U/D3055L2-60
O-252
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PDF
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Untitled
Abstract: No abstract text available
Text: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.
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Original
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STU/D3055L2-60
O-252
O-251
O-252AA
300ms
U/D3055L2-60
Tube/TO-252
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PDF
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C5239
Abstract: No abstract text available
Text: STU/D3055L2 SamHop Microelectronics Co rp. Mar.06, 2007 ver1.4 N-Channel Logic Level Enhancement Mode F ield Effect Transistor PRODUCT V DSS FEA TURES SUMMARY ID R DS ON (mW ) Super high dense cell desig n for low R DS(ON). Max Rugged and reliable. 45 @ VGS = 10V
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STU/D3055L2
O-252
O-251
O-252AA
urrent-C85
U/D3055L2
Tube/TO-252
C5239
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PDF
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Untitled
Abstract: No abstract text available
Text: Green Product STU/D30L01 S a mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ 100V 30A 30 @ VGS=10V Rugged and reliable.
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STU/D30L01
O-252
O-251
252AA(
O-252
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PDF
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Untitled
Abstract: No abstract text available
Text: Green Product STU/D30L01A S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ 100V 30A 30 @ VGS=10V Rugged and reliable.
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STU/D30L01A
O-252
O-251
252AA(
O-252
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PDF
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D3055
Abstract: 1S10M
Text: S T U/D3055NL S amHop Microelectronics C orp. P reliminary May.28,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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Original
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U/D3055NL
O-252
O-251
O-252AA
300ms
Tube/TO-252
D3055
1S10M
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PDF
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Untitled
Abstract: No abstract text available
Text: S T U/D3030NL S amHop Microelectronics C orp. Nov 30 , 2004 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.
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Original
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U/D3030NL
O-252
O-251
O-252AA
O-252
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PDF
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D3055L
Abstract: D3055
Text: S T U/D3055L Green Product S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mΩ) S uper high dense cell design for low R DS (ON ).
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Original
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U/D3055L
O-252
O-251
O-252AA
Tube/TO-252
O-252
D3055L
D3055
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PDF
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d30n02
Abstract: No abstract text available
Text: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V
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Original
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DU/D30N02
O-252
O-251
O-252AA
Tube/TO-252
O-252
d30n02
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PDF
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