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    TRANSISTOR D929 Search Results

    TRANSISTOR D929 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D929 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d933

    Abstract: D932 BUK9MNN-65PKK MS-013 SO20 transistor D929
    Text: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MNN-65PKK d933 D932 BUK9MNN-65PKK MS-013 SO20 transistor D929

    Untitled

    Abstract: No abstract text available
    Text: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MNN-65PKK

    Untitled

    Abstract: No abstract text available
    Text: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MNN-65PKK