PUMF12
Abstract: MCE153
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor
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MBD128
PUMF12
OT363
OT323
SC-70)
613514/01/pp7
PUMF12
MCE153
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PUMF11
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor
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MBD128
PUMF11
OT363
OT323
SC-70)
613514/01/pp7
PUMF11
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D1486
Abstract: 2SC4342
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SC4342
2SC4342
O-126
D1486
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D1485
Abstract: 2SA1720
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SA1720
2SA1720
O-220
D1485
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DTC114TE
Abstract: SMD310 motorola DTC114TE
Text: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a
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DTC114TE/D
DTC114TE
416/SC
DTC114TE/D*
DTC114TE
SMD310
motorola DTC114TE
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DTC114YE
Abstract: SMD310 motorola DTC114YE
Text: MOTOROLA Order this document by DTC114YE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a
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DTC114YE/D
DTC114YE
416/SC
DTC114YE/D*
DTC114YE
SMD310
motorola DTC114YE
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2SA1743
Abstract: C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
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2SA1743
2SA1743
C11531E
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IC-3479
Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits
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PA1428A
PA1428A
PA1428AH
IC-3479
IC-8359
uPA1428
transistor array high speed
uPA1428AH
IEI-1213
PA1428
MF-1134
PA1428AH
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2SD1581
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is
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2SD1581
2SD1581
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DTA143EE
Abstract: SMD310 43 DTA143EE
Text: MOTOROLA Order this document by DTA143EE/D SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA143EE/D
DTA143EE
416/SC
DTA143EE/D*
DTA143EE
SMD310
43 DTA143EE
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PA1476
Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1476
PA1476
PA1476H
transistor b 1202
uPA1476
uPA1476H nec
UPA1476H
NEC SIP
pa*476
IEI-1213
MEI-1202
MF-1134
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2SA1742
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal
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2SA1742
2SA1742
O-220
O-220)
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ic 8705
Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1436A
PA1436A
PA1436AH
ic 8705
IC-8705
nec 8705
IC-3482
PA1436AH
IEI-1209
UPA1436AH
pa1436
transistor array high speed
IEI-1213
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DTA114YE
Abstract: SMD310
Text: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA114YE/D
DTA114YE
416/SC
DTA114YE/D*
DTA114YE
SMD310
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IC-3523
Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and
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PA1458
PA1458
PA1458H
IC-3523
IC-6342
MEI-1202
MF-1134
IEI-1213
power transistor array
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2SC4550
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4550
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NEC 2sc4552
Abstract: 2SC4552
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4552
2SC4552
NEC 2sc4552
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uPA1456H
Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1456
PA1456
PA1456H
uPA1456H
IC-3521
IC-6340
IEI-1213
MEI-1202
MF-1134
DARLINGTON TRANSISTOR ARRAY
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D1615
Abstract: transistor ab2 12
Text: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for
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2SD2425
2SD2425
2SB1578
C11531E)
D1615
transistor ab2 12
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mcl610
Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR
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MCT210
MCT26
MCT66
MCL600
MCL610
MCT81
MCA81
MCL611
Transistor Data chart
mcl600
mcs6200
transistor 6 B
transistor c 2500
MCT4R
MCL601
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MCT8 opto
Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR
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MCT210
MCT26
MCT66
C1255
10TT1.
MCT8 opto
c1252
MCL601
MCT8 opto switch
C1246
4N25
4N26
4N27
4N28
4N35
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2SC3603
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
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2SC3603
2SC3603
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
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2SC3603
2SC3603
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise
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2SC3587
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