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    TRANSISTOR DATA 3150 Search Results

    TRANSISTOR DATA 3150 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR DATA 3150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D088 PBSS8110T R75/02/pp12 771-PBSS8110TT/R

    sot23 marking u8

    Abstract: PBSS8110T PBSS9110T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D088 PBSS8110T R75/02/pp12 sot23 marking u8 PBSS8110T PBSS9110T

    transistor s46

    Abstract: SC6210 marking S46 sot89 PBSS4350x PBSS5350X Sc-6210 marking code s46
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 21 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X


    Original     		PDF M3D109 PBSS5350X SC-62) R75/03/pp12 transistor s46 SC6210 marking S46 sot89 PBSS4350x PBSS5350X Sc-6210 marking code s46

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T


    Original     		PDF M3D088 PBSS8110T R75/02/pp12

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 21 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X


    Original     		PDF M3D109 PBSS5350X SC-62) R75/03/pp12

    transistor s46

    Abstract: marking S46 sot89 PBSS4350X PBSS5350X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor


    Original     		PDF M3D109 PBSS5350X SC-62) SCA76 R75/03/pp12 transistor s46 marking S46 sot89 PBSS4350X PBSS5350X

    transistor s46

    Abstract: marking code s46 PBSS4350x PBSS5350X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor


    Original     		PDF M3D109 PBSS5350X SC-62) SCA75 R75/02/pp11 transistor s46 marking code s46 PBSS4350x PBSS5350X

    transistor s46

    Abstract: marking S46 sot89 MLE186 PBSS5350 MLE168 MLE170 free transistor equivalent book
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D109 PBSS5350X SC-62) SCA75 613514/01/pp12 transistor s46 marking S46 sot89 MLE186 PBSS5350 MLE168 MLE170 free transistor equivalent book

    free transistor equivalent book

    Abstract: transistor npn U8 dec npn U8 free all transistor equivalent book PBSS8110T PBSS9110T transistor ic equivalent book marking A 103 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jul 28 2003 Dec 22 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D088 PBSS8110T SCA75 R75/02/pp12 free transistor equivalent book transistor npn U8 dec npn U8 free all transistor equivalent book PBSS8110T PBSS9110T transistor ic equivalent book marking A 103 transistor

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    Transistor J550

    Abstract: j584 transistor
    Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26H200W03S AFT26H200W03SR6 Transistor J550 j584 transistor

    smd transistor 6g

    Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
    Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component

    BLS7G2933S-150

    Abstract: a 3150 data sheet JESD625-A
    Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 1 — 12 November 2010 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS7G2933S-150 BLS7G2933S-150 a 3150 data sheet JESD625-A

    transistor d 1302

    Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component

    BLS7G2933S-150

    Abstract: radar amplifier s-band SOT922-1 JESD625-A
    Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS7G2933S-150 BLS7G2933S-150 radar amplifier s-band SOT922-1 JESD625-A

    Untitled

    Abstract: No abstract text available
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS7G2933S-150

    Untitled

    Abstract: No abstract text available
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130

    TRANSISTOR SMD MARKING CODE 42

    Abstract: TRANSISTOR SMD MARKING CODES PMEM4030NS PMEM4030PS
    Text: PMEM4030PS PNP transistor/Schottky rectifier module Rev. 01 — 28 June 2005 Product data sheet 1. Product profile 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1


    Original     		PDF PMEM4030PS OT96-1 SO8/MS-012) PMEM4030NS. TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODES PMEM4030NS PMEM4030PS

    2SC6082

    Abstract: Sanyo ic ENA0279
    Text: 2SC6082 Ordering number : ENA0279 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit . Features


    Original     		PDF 2SC6082 ENA0279 A0279-4/4 2SC6082 Sanyo ic ENA0279

    transistor c6082

    Abstract: ENA0279B 2SC6082 C6082
    Text: 2SC6082 Ordering number : ENA0279B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features


    Original     		PDF ENA0279B 2SC6082 PW10s, A0279-7/7 transistor c6082 ENA0279B 2SC6082 C6082

    transistor c6082

    Abstract: No abstract text available
    Text: 2SC6082 Ordering number : ENA0279B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features


    Original     		PDF 2SC6082 ENA0279B A0279-7/7 transistor c6082

    transistor c6082

    Abstract: c6082 ENA0279A
    Text: 2SC6082 Ordering number : ENA0279A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit Features


    Original     		PDF ENA0279A 2SC6082 PW10s, A0279-5/5 transistor c6082 c6082 ENA0279A

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp