foto sensor
Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
Text: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor
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GPXY6052
foto sensor
optical interrupter darlington
gabellichtschranke
datasheet ic 4060
Fototransistor
Q62702-P5263
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PDF
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foto sensor
Abstract: Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter
Text: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor
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Original
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GPX06992
foto sensor
Fototransistor
opto counter
Opto Interrupter slotted
1/IRF 9330
gabellichtschranke
Q62702-P5263
w 9330
opto sensor counter
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PDF
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4 npn transistor ic 14pin
Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation
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PA104
PA104B:
PA104G:
14-pin
PA104
4 npn transistor ic 14pin
lowest noise audio NPN transistor
C10535E
MICRO-X TRANSISTOR MARK Q6
8 npn transistor ic 14pin
MIL GRADE TRANSISTOR ARRAY
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PDF
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nj TRANSISTOR
Abstract: 450KW
Text: 3mm Silicon PNP Photo Transistor Dialight 551-7610 1.57 [.062] 4.32 [.170] 7.11 .280 Features 6.35 [.250] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability 3.00 [.118] DIA. 5.08 [.200]
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MIL-STD-202E,
nj TRANSISTOR
450KW
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PDF
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nj TRANSISTOR
Abstract: No abstract text available
Text: NEW 3mm Infrared Discrete LED Silicon PNP Photo Transistor Dialight 521-9740 Features 5.18 [.204] 4.09 [.161] .79 [.031] .61 [.024] SQ. .71 [.028] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability
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MIL-STD-202E,
nj TRANSISTOR
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PDF
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4 npn transistor ic 14pin
Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package
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PA102
PA102B:
14-pin
PA102G:
PA102
4 npn transistor ic 14pin
8 npn transistor ic 14pin
C10535E
UPA102G
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PDF
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4 npn transistor ic 14pin
Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package
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PA101
PA101B:
14-pin
PA101G:
PA101B-E1
4 npn transistor ic 14pin
MIL GRADE TRANSISTOR ARRAY
C10535E
Silicon Bipolar Transistor Q6
MICRO-X TRANSISTOR MARK Q6
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PDF
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Rise time of photo transistor
Abstract: No abstract text available
Text: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MDB 1. GENERAL DESCRIPTION The HI-T70MDB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with black epoxy encapsulation. With daylight filter the phototransistor is sensitive only to infrared rays.
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HI-T70MDB
HI-T70MDB
200Lux
2000Lux
Rise time of photo transistor
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PDF
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PHOTO TRANSISTOR
Abstract: "photo transistor"
Text: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MDA 1. GENERAL DESCRIPTION The HI-T70MDA is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with black epoxy encapsulation. With daylight filter the phototransistor is sensitive only to infrared rays.
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HI-T70MDA
HI-T70MDA
200Lux
2000Lux
PHOTO TRANSISTOR
"photo transistor"
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PDF
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CS1W-CN118
Abstract: AR2315 CS1W-CN114 cable connection diagram CPM2C-BAT01 cn118 CS1W-CN118 cable connection diagram CN111 CPM2C CS1W-CN118 cable datasheet 500 hour counter with memory function circuit diagram
Text: CPM2C Specifications CPM2C General Specifications CPU Units with 10 I/O points Item Relay outputs Transistor outputs CPU Units with 20 I/O points Transistor outputs Expansion I/O Units 10 I/O points (Relay outputs) 24 I/O points (Transistor outputs) Supply voltage
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075-mm
accele300
OUT01000
OUT01001:
OUT01002
CS1W-CN118
AR2315
CS1W-CN114 cable connection diagram
CPM2C-BAT01
cn118
CS1W-CN118 cable connection diagram
CN111
CPM2C
CS1W-CN118 cable datasheet
500 hour counter with memory function circuit diagram
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PDF
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Monolithic Transistor Pair
Abstract: MD6002
Text: MD6002 Complementary Monolithic Transistor Pair 67.00 Transistors Multiple Transisto. Page 1 of 1 Enter Your Part # Home Part Number: MD6002 Online Store MD6002 Diodes Complementary Monolithic Transistor Pair Transistors Integrated Circuits Optoelectronics
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MD6002
MD6002
com/md6002
Monolithic Transistor Pair
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PDF
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2N6055
Abstract: No abstract text available
Text: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Part Number: 2N6055 Online Store 2N6055 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics
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2N6055
2N6055
com/2n6055
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PDF
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2N1671B
Abstract: No abstract text available
Text: 2N1671B UNIJUNCTION TRANSISTOR 26.87 Thyristors Unijunction Transistors PN . Page 1 of 1 Enter Your Part # Home Part Number: 2N1671B Online Store 2N1671B Diodes UNIJUNCTION TRANSISTOR Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N1671B
2N1671B
com/2n1671b
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PDF
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2N6056
Abstract: ALL SILICON COMPLEMENTARY transistors darlington
Text: 2N6056 Darlington complementary silicon power transistor 8.63 Transistors Darlington T. Page 1 of 2 Enter Your Part # Home Part Number: 2N6056 Online Store 2N6056 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics
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2N6056
2N6056
com/2n6056
ALL SILICON COMPLEMENTARY transistors darlington
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PDF
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CA3046
Abstract: CA3046 NPN FN341 FN-3414
Text: CA3046 General Purpose NPN Transistor Arrays FN341.4 3.98 Transistors Multiple Tran. Page 1 of 1 Enter Your Part # Home Part Number: CA3046 Online Store CA3046 Diodes General Purpose NPN Transistor Arrays FN341.4 Transistors Integrated Circuits Optoelectronics
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CA3046
FN341
CA3046
com/ca3046
CA3046 NPN
FN-3414
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N6313 60V complementary PNP silicon power transistor 3.75 Transistors Transistors Bi. Page 1 of 1 Enter Your Part # Home Part Number: 2N6313 Online Store 2N6313 Diodes 60V complementary PNP silicon power transistor Transistors Integrated Circuits Optoelectronics
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2N6313
2N6313
com/2n6313
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PDF
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MHQ2369H
Abstract: MHQ2369 you lost me
Text: MHQ2369 Independent Transistor Array 9.60 Transistors Multiple Transistors - Arrays a. Page 1 of 1 Enter Your Part # Home Part Number: MHQ2369 Online Store MHQ2369 Diodes Independent Transistor Array Transistors Enter code INTER3 at checkout.* Integrated Circuits
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MHQ2369
MHQ2369
com/mhq2369
MHQ2369H
you lost me
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PDF
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transistor 1052
Abstract: WPDT-317D photo darlington sensor Rise time of photo transistor p317d
Text: Photo Transistor Waitrony Module No.: WPDT-317D 1. General Description: The WPDT-317D is ; output NPN photo dai transistor mounted in an end black epoxy package. This photo darlington transistor narrow angular response. Dimensions 2. Features > > ^ > Compact 03mm
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OCR Scan
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WPDT-317D
WPDT-317D
Temper317D
transistor 1052
photo darlington sensor
Rise time of photo transistor
p317d
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PDF
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u101b
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)
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OCR Scan
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uPA101B
14-pin
tPA101G
u101b
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)
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OCR Scan
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uPA102
PA102B:
PA102G:
14-pin
PA102
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PDF
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Untitled
Abstract: No abstract text available
Text: 3mm Silicon PNP Photo Transistor n Ìn lm U l I m a iig n r • 551-7610 1.57 062] [. Features 6.35 250 ] - -[. • • • • • ± 3.00 [. 118] DIA. T 3.67 149] Silicon PNP type transistor Narrow acceptance angle Daylight filtered Good linearity High reliability
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OCR Scan
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450kW
MIL-STD-202E,
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PDF
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transistor 9740
Abstract: No abstract text available
Text: Dialight Infrared Discrete LED Silicon PNP Photo Transistor 521 .9740 Features • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability AB SO LU TE M A X IM U M RA TING S TA=25°C Operating and Storage
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OCR Scan
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MIL-STD-202E,
transistor 9740
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PDF
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Untitled
Abstract: No abstract text available
Text: 3mm Silicon PNP Photo Transistor Dîalî ght 551-7610 Features • • • • • Silicon PNP type transistor Narrow acceptance angle Daylight filtered Good linearity High reliability ABSO LU TE MA X IM U M RATINGS TA=25°C O perating and Storage Tem perature Range (°C)
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OCR Scan
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450kW
MIL-STD-202E,
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PDF
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transistor 9740
Abstract: No abstract text available
Text: Dia light Infrared Discrete LED Silicon PNP Photo Transistor 521 -9740 Features • • • • • Silicon PNP type transistor Narrow acceptance angle Daylight filtered Good linearity High reliability A B S O L U T E M A X IM U M R A T IN G S TA=25°C Operating and Storage
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OCR Scan
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MIL-STD-202E,
transistor 9740
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PDF
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