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    TRANSISTOR DC 27K Search Results

    TRANSISTOR DC 27K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR DC 27K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VLP4045LT-4R7M

    Abstract: VLP4045LT-6R8M VLP4045 TMK316BJ106KL LMK212ABJ106KG VLP4045LT XC9246B75 XFL4020-332MEB XC9247B75 XC9247B65
    Text: XC9246/XC9247 Series ETR05024-004 16V Driver Transistor Built-In Step-Down DC/DC Converters ☆GreenOperation-compatible •GENERAL DESCRIPTION XC9246/XC9247 series is a 16V step-down DC/DC converter with a built-in driver transistor. The series provides high


    Original     		PDF XC9246/XC9247 ETR05024-004 XC9246 VLP4045LT-4R7M VLP4045LT-6R8M VLP4045 TMK316BJ106KL LMK212ABJ106KG VLP4045LT XC9246B75 XFL4020-332MEB XC9247B75 XC9247B65

    Step-Down

    Abstract: 16V Step-Down DC/DC Converter XC9246 XC9247
    Text: XC9246/XC9247 Series ETR05024-005a 16V Driver Transistor Built-In Step-Down DC/DC Converters ☆GreenOperation-compatible •GENERAL DESCRIPTION XC9246/XC9247 series is a 16V step-down DC/DC converter with a built-in driver transistor. The series provides high


    Original     		PDF XC9246/XC9247 ETR05024-005a Step-Down 16V Step-Down DC/DC Converter XC9246 XC9247

    mark A E sot-89

    Abstract: MA721
    Text: ELM94xxB CMOS PFM step-up DC/DC converter •General description ELM94xxB is CMOS step-up DC/DC converter which consists of reference voltage source, error amplifier, oscillation circuit, start-up circuit, PFM control circuit, switching transistor and output voltage setting resistor.


    Original     		PDF ELM94xxB ELM94 mark A E sot-89 MA721

    ma721

    Abstract: ELM9550D
    Text: ELM95xxD CMOS PWM step-up DC/DC converter •General description ELM95xxD series is CMOS PWM step-up DC/DC converter which consists of reference voltage source, error amplifier, oscillation circuit, start-up circuit, PWM control circuit, switch transistor and output voltage setting


    Original     		PDF ELM95xxD ELM95 ELM9550D) MA721, ma721 ELM9550D

    Untitled

    Abstract: No abstract text available
    Text: ELM94xxB CMOS PFM step-up DC/DC converter •General description ELM94xxB is CMOS step-up DC/DC converter which consists of reference voltage source, error amplifier, oscillation circuit, start-up circuit, PFM control circuit, switching transistor and output voltage setting resistor.


    Original     		PDF ELM94xxB ELM94

    MA721

    Abstract: ELM9550D ELM9530D
    Text: ELM95xxD CMOS PWM step-up DC/DC converter •General description ELM95xxD series is CMOS PWM step-up DC/DC converter which consists of reference voltage source, error amplifier, oscillation circuit, start-up circuit, PWM control circuit, switch transistor and output voltage setting


    Original     		PDF ELM95xxD ELM95 ELM9550D) MA721, MA721 ELM9550D ELM9530D

    Untitled

    Abstract: No abstract text available
    Text: ELM95xxD CMOS PWM step-up DC/DC converter •General description ELM95xxD series is CMOS PWM step-up DC/DC converter which consists of reference voltage source, error amplifier, oscillation circuit, start-up circuit, PWM control circuit, switch transistor and output voltage setting


    Original     		PDF ELM95xxD ELM95 ELM9550D) MA721,

    power supply DC 48v 100a power supply circuit diagram

    Abstract: ELM9433B MA721 C22F elm9450
    Text: ELM94xxB CMOS PFM step-up DC/DC converter •General description ELM94xxB is CMOS step-up DC/DC converter which consists of reference voltage source, error amplifier, oscillation circuit, start-up circuit, PFM control circuit, switching transistor and output voltage setting resistor.


    Original     		PDF ELM94xxB ELM94 power supply DC 48v 100a power supply circuit diagram ELM9433B MA721 C22F elm9450

    TK40P03M1

    Abstract: TK40P03M tk40p03m,
    Text: TK40P03M1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TK40P03M1 High-Efficiency DC-DC Converter Applications Desktop PC Applications High forward transfer admittance: |Yfs| = 55 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 30 V)


    Original     		PDF TK40P03M1 14MAX TK40P03M1 TK40P03M tk40p03m,

    TK50P03M1

    Abstract: tk50p03m TC5016
    Text: TK50P03M1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TK50P03M1 High-Efficiency DC-DC Converter Applications Desktop PC Applications High forward transfer admittance: |Yfs| = 90 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 30 V)


    Original     		PDF TK50P03M1 14MAX TK50P03M1 tk50p03m TC5016

    TK40P04M

    Abstract: TK40P04M1
    Text: TK40P04M1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TK40P04M1 High-Efficiency DC-DC Converter Applications Switching Regulator 1.08±0.2 Unit: mm • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)


    Original     		PDF TK40P04M1 TK40P04M TK40P04M1

    tk50p04m

    Abstract: TK50P04M1 DSAE002552
    Text: TK50P04M1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TK50P04M1 High-Efficiency DC-DC Converter Applications Switching Regulator 1.08±0.2 Unit: mm • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)


    Original     		PDF TK50P04M1 tk50p04m TK50P04M1 DSAE002552

    Untitled

    Abstract: No abstract text available
    Text: TK5P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK5P50D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ID 5 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK5P50D 14MAX 58MAX

    Untitled

    Abstract: No abstract text available
    Text: TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4P60DB Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.7 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1)


    Original     		PDF TK4P60DB 14MAX 58MAX

    Untitled

    Abstract: No abstract text available
    Text: TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 6 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK6P53D 14MAX 58MAX

    Untitled

    Abstract: No abstract text available
    Text: TK4P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4P50D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ID 4 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK4P50D 14MAX 58MAX

    Untitled

    Abstract: No abstract text available
    Text: TK4P60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4P60DA Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.5 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1)


    Original     		PDF TK4P60DA 14MAX 58MAX

    Untitled

    Abstract: No abstract text available
    Text: TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4P60DB Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.7 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK4P60DB 14MAX 58MAX

    Untitled

    Abstract: No abstract text available
    Text: TK5P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK5P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 5 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK5P53D 14MAX

    TK6P

    Abstract: TK6P53D transistor Toshiba
    Text: TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 6 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK6P53D 14MAX 58MAX TK6P TK6P53D transistor Toshiba

    Untitled

    Abstract: No abstract text available
    Text: TK4P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4P50D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ID 4 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK4P50D 14MAX 58MAX

    TK5P50D

    Abstract: TK5P50
    Text: TK5P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5P50D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ID 5 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK5P50D 14MAX 58MAX TK5P50D TK5P50

    000110V

    Abstract: No abstract text available
    Text: TK5P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 5 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK5P53D 14MAX 000110V

    Untitled

    Abstract: No abstract text available
    Text: TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 6 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2


    Original     		PDF TK6P53D 14MAX 58MAX