EN5387
Abstract: FX901 PNP Transistor MOSFET
Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low
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EN5387
FX901
FX901]
EN5387
FX901
PNP Transistor MOSFET
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low
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EN5387
FX901
FX901]
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c124 npn
Abstract: transistor NPN C124 OPA623X2 transisTOR C124 c124 transistor C121 C124 C202 C203 C206
Text: * OPA623X2 WIDE BANDWIDTH, CURRENT FEEDBACK, MACROMODEL, COMPLEX VERSION * * CREATED 8/92 KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;
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OPA623X2
029E-12
017E-12
050E-12
80E-12
00E-12
1567E-16
272E-3
67E-3
248E-20
c124 npn
transistor NPN C124
transisTOR C124
c124 transistor
C121
C124
C202
C203
C206
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OPA660
Abstract: P-N-P CURRENT MIRROR ZENER DIODE 27c diode zener 27c AB-181 basic electronik operational transconductance amplifier 27C zener 8pin 382 229 diamond circuit
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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OPA660
OPA660
P-N-P CURRENT MIRROR
ZENER DIODE 27c
diode zener 27c
AB-181
basic electronik
operational transconductance amplifier
27C zener
8pin 382 229
diamond circuit
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c124 npn
Abstract: transistor NPN C124 TRANSISTOR BC 1366 c124 transistor C2099 transistor c124 C203 C204 C208 C209
Text: * OPA622X2 WIDE-BANDWIDTH OPERATIONAL AMPLIFIER MACROMODEL COMPLEX VERSION * * CREATED 8/92 BY KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;
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OPA622X2
029E-12
017E-12
050E-12
80E-12
00E-12
1567E-16
272E-3
67E-3
248E-20
c124 npn
transistor NPN C124
TRANSISTOR BC 1366
c124 transistor
C2099
transistor c124
C203
C204
C208
C209
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AB-181
Abstract: OPA660
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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OPA660
OPA660
AB-181
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bc557
Abstract: OP AMP DIL8 AM417 BC557C BCW68H transistor 91 330 analog
Text: RATIOMETRIC VOLTAGE TRANSMITTER AM417 FEATURES GENERAL DESCRIPTION • Supply Voltage 5V± ±5% Ratio Range • Wide Operating Temperature Range: –40°C.+100°C • Ratiometrical Current Source for Transducer Excitation • Instrumentation Amplifier Input
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AM417
AM417
bc557
OP AMP DIL8
BC557C
BCW68H
transistor 91 330 analog
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triac with snubber
Abstract: RF transistor W2W TRIAC RCA Westinghouse SCR handbook BATTERY CHARGER SCR ZO 607 TRIAC 11Z13 TRIAC zo 607 MA AC 220v fan motor speed control triac bt136 220v dimmer light bt139
Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’
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DL137/D
May-2000
r14525
DL137/D
triac with snubber
RF transistor W2W
TRIAC RCA
Westinghouse SCR handbook
BATTERY CHARGER SCR
ZO 607 TRIAC
11Z13
TRIAC zo 607 MA
AC 220v fan motor speed control triac bt136
220v dimmer light bt139
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TRIAC zo 607 MA
Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’
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DL137/D
May-2000
r14525
TRIAC zo 607 MA
ZO 607 TRIAC
Westinghouse SCR handbook
tl-130 transformer
BRX49 equivalent
800w class d circuit diagram schematics
triac MAC 97 AB
triac MAC 97 A6
ZO 103 TRIAC
1N5760
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CIRCUITS BY USING 2N6027
Abstract: 2n6027 practical application circuits 2N6028 schematic equivalent transistor of 2n6027 2N6028 Application Note transistor put 2n6028 triac control thyristor firing circuit SCR 320 Snubber Capacitor transistor 2N6028 2N6241 equivalent
Text: SECTION 3 THYRISTOR DRIVERS AND TRIGGERING 1.0 Edited and Updated W ≥ BASE WIDTH L ≥ DIFFUSION LENGTH Triggering a thyristor requires meeting its gate energy specifications and there are many ways of doing this. In general, the gate should be driven hard and fast to ensure
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2SA1647
Abstract: 2SA1647-Z d1483
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING Unit: mm 6.5 ±0.2 5.0 ±0.2 This transistor is ideal for use in switching regulators, DC/DC
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2SA1647,
2SA1647-Z
2SA1647
2SA1647-Z
d1483
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transistor 1647
Abstract: 2SA1647
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647,1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 This transistor is ideal for use in switching regulators, DC/DC
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2SA1647
1647-Z
transistor 1647
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Untitled
Abstract: No abstract text available
Text: CPC1580 Optically Isolated Gate Drive Circuit INTEGRATED CIRCUITS DIVISION Features Description • • • • • • • The CPC1580 optical gate driver provides isolated control of a discrete power MOSFET transistor without the need of an external power supply. Control of the
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CPC1580
CPC1580
3750Vrms
DS-CPC1580-R01
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431 transistor
Abstract: CPC1580P
Text: CPC1580 Optically Isolated Gate Drive Circuit INTEGRATED CIRCUITS DIVISION PRELIMINARY Features Description • • • • • • • The CPC1580 optical gate driver provides isolated control of a discrete power MOSFET transistor without the need of an external power supply. Control of the
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3750Vrms
CPC1580
CPC1580
DS-CPC1580-R00H
431 transistor
CPC1580P
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MP4305
Abstract: No abstract text available
Text: MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type Darlington power transistor 4 in 1 MP4305 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin)
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MP4305
MP4305
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647,1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PACKAGE DRAWINGS Unit: mm DESCRIPTION 6.5 ±0.2 voltage. 5.0 ±0.2 0.5 ±0.1 2 3 1.1 ±0.2 • Available for high-current control in small dimension
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2SA1647
1647-Z
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2SA1647
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647,1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PACKAGE DRAWINGS Unit: mm DESCRIPTION 6.5 ±0.2 voltage. 5.0 ±0.2 0.5 ±0.1 2 3 1.1 ±0.2 • Available for high-current control in small dimension
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2SA1647
1647-Z
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67031
Abstract: Si5711EDU-T1-GE3 Si5711EDU si5711
Text: Si5711EDU Vishay Siliconix P-Channel 20 V D-S MOSFET and PNP Low VCE(sat) Switching Transistor FEATURES MOSFET - PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21
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Si5711EDU
2002/95/EC
11-Mar-11
67031
Si5711EDU-T1-GE3
si5711
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transistor k44
Abstract: No abstract text available
Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve
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TISP8200HDM
TISP8201HDM
TISP820xHDM
GR-1089-CORE
TSP0620
transistor k44
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transistor array K1 marking
Abstract: bourns capacitor network transistor k44
Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve
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TISP8200HDM
TISP8201HDM
TISP820xHDM
GR-1089-CORE
IP51-781-5700
TSP0620
transistor array K1 marking
bourns capacitor network
transistor k44
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TISP8201HDMR-S
Abstract: GR-1089-CORE TISP8200HDMR-S pnp npn dual emitter connected transistor k44
Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve
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TISP8200HDM
TISP8201HDM
TISP820xHDM
Program1-41-7685510
TSP0620
TISP8201HDMR-S
GR-1089-CORE
TISP8200HDMR-S
pnp npn dual emitter connected
transistor k44
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transistor equivalent irf510
Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
Text: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.
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Mj2955 power transistor using regulator
Abstract: 48 VDC voltage regulator 369A MC78M00
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Three-Terminal Medium Current Positive Voltage Regulators The MC78M00 Series positive voltage regulators are identical to the popular MC7800 Series devices, except that they are specified for only half the output current. Like the MC7800 devices, the MC78M00 three-terminal regulators are
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MC78M00
MC7800
MJ2955
MJ2955
Mj2955 power transistor using regulator
48 VDC voltage regulator
369A
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4W0E
Abstract: SMEW H11C4 H11C5-H11C6 VP243 GE SCR 1000 H11C5 H11C6 400v transistor the light activated scr
Text: G E SOLID STATE 01 DE J 3ñ7SDñl DOlTOfl b | Optoelectronic Specifications " T -w -s 7 Photon Coupled Isolator H11C4 Ga As Infrared Emitting Diode & Light Activated SCR The GE Solid State H 11C4, H 11C5 and H11C6 are gallium arsenide, infrared emitting diodes coupled with light activated silicon con- j
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3fl75DÃ
H11C4
H11C5,
H11C6^
H11C4,
H11C5
33mW/Â
4W0E
SMEW
H11C4
H11C5-H11C6
VP243
GE SCR 1000
H11C6
400v transistor
the light activated scr
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