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    TRANSISTOR E11 Search Results

    TRANSISTOR E11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR E11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


    Original     		PDF LM96163 LM96163 2N3904,

    Untitled

    Abstract: No abstract text available
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


    Original     		PDF LM96163 2N3904,

    2N3904

    Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


    Original     		PDF LM96163 LM96163 2N3904, 2N3904 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6

    RTU620

    Abstract: No abstract text available
    Text: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta


    Original     		PDF LM96163 LM96163 SNAS433C RTU620

    Untitled

    Abstract: No abstract text available
    Text: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 3 1 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages


    Original     		PDF BFR750L3RH

    BFR750L3RH

    Abstract: spice germanium diode BFR705L3RH
    Text: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range 3 1 of wireless applications up to 10 GHz 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP 3 and P-1dB for driver stages


    Original     		PDF BFR750L3RH BFR750L3RH spice germanium diode BFR705L3RH

    Untitled

    Abstract: No abstract text available
    Text: BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC846A/B, BC847A/B/C, BC848A/B/C 250mW, OT-23 MIL-STD-202, MGT724

    transistor marking code SOT-23

    Abstract: transistor packing code 3f TRANSISTOR 3F t SOT-23 marking 050 transistor transistor sot23 3F transistor MARKING CODE 16 transistor sot23 SOT-23 transistor code 3e transistor SOT23 br sot-23 MARKING 3l
    Text: BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC856A/B, BC857A/B/C, BC858A/B/C 250mW, OT-23 MIL-STD-202, C/10s 008gram transistor marking code SOT-23 transistor packing code 3f TRANSISTOR 3F t SOT-23 marking 050 transistor transistor sot23 3F transistor MARKING CODE 16 transistor sot23 SOT-23 transistor code 3e transistor SOT23 br sot-23 MARKING 3l

    Untitled

    Abstract: No abstract text available
    Text: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range 3 1 of wireless applications up to 10 GHz 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP 3 and P-1dB for driver stages


    Original     		PDF BFR750L3RH

    TRANSISTOR 3F t

    Abstract: BC857A SOT-23 transistor code 3e
    Text: BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC856A/B, BC857A/B/C, BC858A/B/C 250mW, OT-23 MIL-STD-202, TRANSISTOR 3F t BC857A SOT-23 transistor code 3e

    transistor 1f sot-23

    Abstract: transistor marking code SOT-23 1B SOT-23 1k sot-23 NPN BC846B SOT23 BC846B BC847A 1a sot-23 BC847C BC848A
    Text: BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC846A/B, BC847A/B/C, BC848A/B/C 250mW, OT-23 MIL-STD-202, MGT724 transistor 1f sot-23 transistor marking code SOT-23 1B SOT-23 1k sot-23 NPN BC846B SOT23 BC846B BC847A 1a sot-23 BC847C BC848A

    E110NA20

    Abstract: Ultrasonic welding circuit diagram schematic diagram UPS Ultrasonic welding circuit schematic diagram UPS 600 Power free schematic diagram welding device SMPS SCHEMATIC DIAGRAM vdgr test circuit CIRCUIT DIAGRAM UPS ultrasonic welding
    Text: STE110NA20 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST E110NA20 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.019 Ω 110 A TYPICAL RDS(on) = 0.015 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STE110NA20 E110NA20 E110NA20 Ultrasonic welding circuit diagram schematic diagram UPS Ultrasonic welding circuit schematic diagram UPS 600 Power free schematic diagram welding device SMPS SCHEMATIC DIAGRAM vdgr test circuit CIRCUIT DIAGRAM UPS ultrasonic welding

    transistor TE 901 equivalent

    Abstract: transistor TE 901 IGT6D11 IGT6E11
    Text: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		PDF IGT6D11 6D11- transistor TE 901 equivalent transistor TE 901 IGT6E11

    K105 transistor

    Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
    Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		PDF IGT4D11 K105 transistor transistor k105 IGT4E11 IGT-4E11

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current


    OCR Scan     		PDF 2SC5507 2SC5507 2SC5507-T2

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages


    OCR Scan     		PDF -335/H-135/D-40 -334/H-280/D-41 -334/H-280/D-41 -334/H-28Q/D-41 L-56SW-42/H-115 L-565/W-42/H-12 OT-23, SC-59 equivalent transistor TT 3034 transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718

    PRW 200

    Abstract: transistor VCE 1000V CMK2100 1bw transistor
    Text: 7 ^ 3 < ? -3 / F F 100 R 10 K 52E EUPEC Transistor Transistor ]> • aM D SST? Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 100 A 751 MUPEC Thermal properties DC, pro Baustein / per module


    OCR Scan     		PDF 34D32CI7 PRW 200 transistor VCE 1000V CMK2100 1bw transistor

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    FF15R10K

    Abstract: No abstract text available
    Text: 7 *39-3/ F F 15R 10K SSE EUPEC D Ü D D lf iE Thermische Eigenschaften Transistor Transistor 34032^7 i RthJC Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1000 V 15 A RthCK lc 54b «U PEC Thermal properties DC, pro Baustein/per module


    OCR Scan     		PDF FF15R10K 34D32CI7 FF15R10K

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1BW TRANSISTOR

    Abstract: transistor 79t
    Text: 7 - 3 9 - 3 / F 300 R 10 K SSE EUPEC » • 34032^7 Q 000252 7TT «U PEC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 1000 V 300 A 600 A 2000 W V ge 20 V Inversdiode Inverse dlode


    OCR Scan     		PDF Q000252 34D32CI7 1BW TRANSISTOR transistor 79t

    J5417AKK

    Abstract: MALLORY 150 CAPACITORS Rogers 6010.5 ATC100A PH1819-45A transistor 41 j5417
    Text: PH1819-45A M/A-OOM Wireless Power Transistor 45 Watts, 1805- 1880 MHz /MOCOVI M RF & Microwave Products Outline Drawing1 Description M/A-COM’s PH11819-45A is a high efficiency silicon bipo­ lar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805


    OCR Scan     		PDF PH1819-45A PH11819-45A PH1819-45A J5417AKK TT50M50A ATC100A MALLORY 150 CAPACITORS Rogers 6010.5 transistor 41 j5417