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    TRANSISTOR E3 Search Results

    TRANSISTOR E3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR E3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P PDF

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily


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    2N499 PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    IPW65R660CFD

    Abstract: ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.1, 2011-06-22 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD


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    IPx65R660CFD IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD IPW65R660CFD ipa65r PDF

    65c6280

    Abstract: IPA65R280C6 IPx65R280C6 MOSFET TRANSISTOR SMD MARKING CODE A1 to247 pcb footprint transistor 313 smd SMD MARKING CODE M3 IPP65R280C6 Diode SMD SJ 66A ipa65
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R280C6 Data Sheet Rev. 2.0, 2010-07-26 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R280C6, IPB65R280C6 IPI65R280C6, IPP65R280C6


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    IPx65R280C6 IPA65R280C6, IPB65R280C6 IPI65R280C6, IPP65R280C6 IPW65R280C6 65c6280 IPA65R280C6 IPx65R280C6 MOSFET TRANSISTOR SMD MARKING CODE A1 to247 pcb footprint transistor 313 smd SMD MARKING CODE M3 IPP65R280C6 Diode SMD SJ 66A ipa65 PDF

    2N5195

    Abstract: 2N5192
    Text: 2N5195  MEDIUM POWER PNP SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.


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    2N5195 2N5195 OT-32 2N5192. OT-32 2N5192 PDF

    PNP POWER TRANSISTOR SOT-32

    Abstract: 2N5195 2N5192
    Text: 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.


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    2N5195 2N5195 OT-32 2N5192. OT-32 PNP POWER TRANSISTOR SOT-32 2N5192 PDF

    65E6280

    Abstract: IPx65R280E6 JESD22 ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.1, 2010-08-16 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPP65R280E6, IPW65R280E6 Description


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    IPx65R280E6 IPA65R280E6, IPP65R280E6, IPW65R280E6 65E6280 IPx65R280E6 JESD22 ipa65r PDF

    6R099C6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6


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    IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6 PDF

    TRANSISTOR SMD MARKING CODE 604

    Abstract: 65F660 MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor M3 smd diode marking B3 MOSFET TRANSISTOR SMD MARKING A1 ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.0, 2011-02-01 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD


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    IPx65R660CFD IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD TRANSISTOR SMD MARKING CODE 604 65F660 MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor M3 smd diode marking B3 MOSFET TRANSISTOR SMD MARKING A1 ipa65r PDF

    6r125c6

    Abstract: IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 IPP60R125C6 to247 pcb footprint JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6


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    IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6r125c6 IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 to247 pcb footprint JESD22 PDF

    PNP POWER TRANSISTOR SOT-32

    Abstract: 2N5195 transistor 2N5195 industrial linear ic data book 2N5192
    Text: 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.


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    2N5195 2N5195 OT-32 2N5192. OT-32 PNP POWER TRANSISTOR SOT-32 transistor 2N5195 industrial linear ic data book 2N5192 PDF

    MJE210

    Abstract: TRANSISTOR B 834 Transistor 834 B 834 Y
    Text: MJE210 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.


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    MJE210 MJE210 OT-32 OT-32 TRANSISTOR B 834 Transistor 834 B 834 Y PDF

    BD234

    Abstract: PNP POWER TRANSISTOR SOT-32
    Text: BD234 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon Epitaxial-Base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.


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    BD234 BD234 OT-32 OT-32 PNP POWER TRANSISTOR SOT-32 PDF

    Transistor 834

    Abstract: MJE210 TRANSISTOR B 834
    Text: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.


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    MJE210 MJE210 OT-32 OT-32 Transistor 834 TRANSISTOR B 834 PDF

    BD179

    Abstract: No abstract text available
    Text: BD179  NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION ■ GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching


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    BD179 BD179 OT-32 OT-32 PDF

    carbon resistors

    Abstract: BLX13 BLX13C philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor
    Text: N AMER PHILIPS/DISCRETE b^E ]> bb53*i31 □ DS*ìSS2 T4T A E3LX13U H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear


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    e3lx13u 7Z77838 BLX13U BLX13C carbon resistors BLX13 philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor PDF

    BLX92A

    Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
    Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


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    BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944 PDF

    FT1551

    Abstract: FT2551
    Text: FUJITSU MICROELECTRONICS 31E D E3 D01bbl2 b E3FMI r-*s- r January 1990 Edition 1.1 FUjlTSU PRODUCT PROFILE - FT2551 Silicon High Speed Power Transistor DESCRIPTION T h e F T 2 5 5 1 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T ) technology. R E T devices are


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    FT2551 FT1551, FT1551 PDF

    Untitled

    Abstract: No abstract text available
    Text: Opto Semiconductors Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Vorläufige Daten/Preliminary Data t'- LO C \J cg 2o: e3 Emitter - t - î Sensor 1 Circuitry -o3 V 1o- -o4 GPX06992 C\J O


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    GPX06992 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BD179 NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package,


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    BD179 BD179 OT-32 OT-32 O-126) PDF

    t125 switch

    Abstract: BUK437-600B
    Text: PHILIPS INTERNATIONAL bSE D E3 711085b OObaSBb 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    7110A2b BUK437-600B t125 switch BUK437-600B PDF