MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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Untitled
Abstract: No abstract text available
Text: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily
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2N499
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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IPW65R660CFD
Abstract: ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.1, 2011-06-22 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD
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IPx65R660CFD
IPD65R660CFD
IPB65R660CFD,
IPP65R660CFD
IPA65R660CFD
IPW65R660CFD
ipa65r
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65c6280
Abstract: IPA65R280C6 IPx65R280C6 MOSFET TRANSISTOR SMD MARKING CODE A1 to247 pcb footprint transistor 313 smd SMD MARKING CODE M3 IPP65R280C6 Diode SMD SJ 66A ipa65
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R280C6 Data Sheet Rev. 2.0, 2010-07-26 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R280C6, IPB65R280C6 IPI65R280C6, IPP65R280C6
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IPx65R280C6
IPA65R280C6,
IPB65R280C6
IPI65R280C6,
IPP65R280C6
IPW65R280C6
65c6280
IPA65R280C6
IPx65R280C6
MOSFET TRANSISTOR SMD MARKING CODE A1
to247 pcb footprint
transistor 313 smd
SMD MARKING CODE M3
IPP65R280C6
Diode SMD SJ 66A
ipa65
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2N5195
Abstract: 2N5192
Text: 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.
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2N5195
2N5195
OT-32
2N5192.
OT-32
2N5192
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PNP POWER TRANSISTOR SOT-32
Abstract: 2N5195 2N5192
Text: 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.
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2N5195
2N5195
OT-32
2N5192.
OT-32
PNP POWER TRANSISTOR SOT-32
2N5192
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65E6280
Abstract: IPx65R280E6 JESD22 ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.1, 2010-08-16 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPP65R280E6, IPW65R280E6 Description
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IPx65R280E6
IPA65R280E6,
IPP65R280E6,
IPW65R280E6
65E6280
IPx65R280E6
JESD22
ipa65r
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6R099C6
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6
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IPx60R099C6
IPA60R099C6,
IPB60R099C6
IPP60R099C6
IPW60R099C6
6R099C6
MOSFET TRANSISTOR SMD MARKING CODE A1
IPx60R099C6
IPW60R099C6
TRANSISTOR SMD MARKING CODE 604
IPB60R099C6
to247 pcb footprint
6R099
TRANSISTOR SMD MARKING CODE
IPA60R099C6
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TRANSISTOR SMD MARKING CODE 604
Abstract: 65F660 MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor M3 smd diode marking B3 MOSFET TRANSISTOR SMD MARKING A1 ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.0, 2011-02-01 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD
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IPx65R660CFD
IPD65R660CFD
IPB65R660CFD,
IPP65R660CFD
IPA65R660CFD
TRANSISTOR SMD MARKING CODE 604
65F660
MOSFET TRANSISTOR SMD MARKING CODE A1
smd transistor M3
smd diode marking B3
MOSFET TRANSISTOR SMD MARKING A1
ipa65r
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6r125c6
Abstract: IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 IPP60R125C6 to247 pcb footprint JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6
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IPx60R125C6
IPA60R125C6,
IPB60R125C6
IPP60R125C6
IPW60R125C6
6r125c6
IPx60R125C6
MOSFET TRANSISTOR SMD MARKING CODE A1
INFINEON to-220 date code marking
MOSFET TRANSISTOR SMD MARKING CODE 11
IPA60R125C6
IPB60R125C6
to247 pcb footprint
JESD22
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PNP POWER TRANSISTOR SOT-32
Abstract: 2N5195 transistor 2N5195 industrial linear ic data book 2N5192
Text: 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.
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2N5195
2N5195
OT-32
2N5192.
OT-32
PNP POWER TRANSISTOR SOT-32
transistor 2N5195
industrial linear ic data book
2N5192
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MJE210
Abstract: TRANSISTOR B 834 Transistor 834 B 834 Y
Text: MJE210 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.
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MJE210
MJE210
OT-32
OT-32
TRANSISTOR B 834
Transistor 834
B 834 Y
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BD234
Abstract: PNP POWER TRANSISTOR SOT-32
Text: BD234 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon Epitaxial-Base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.
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BD234
BD234
OT-32
OT-32
PNP POWER TRANSISTOR SOT-32
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Transistor 834
Abstract: MJE210 TRANSISTOR B 834
Text: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.
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MJE210
MJE210
OT-32
OT-32
Transistor 834
TRANSISTOR B 834
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BD179
Abstract: No abstract text available
Text: BD179 NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION ■ GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching
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BD179
BD179
OT-32
OT-32
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carbon resistors
Abstract: BLX13 BLX13C philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor
Text: N AMER PHILIPS/DISCRETE b^E ]> bb53*i31 □ DS*ìSS2 T4T A E3LX13U H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear
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e3lx13u
7Z77838
BLX13U
BLX13C
carbon resistors
BLX13
philips carbon film resistor
carbon resistor
RF amplifiers in the HF and VHF
A1E transistor
Philips Carbon Resistor
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BLX92A
Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX92A
BLX92A
BLX92
em 179
sfe 5,5 ma
IEC134
transistor IR 944
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FT1551
Abstract: FT2551
Text: FUJITSU MICROELECTRONICS 31E D E3 D01bbl2 b E3FMI r-*s- r January 1990 Edition 1.1 FUjlTSU PRODUCT PROFILE - FT2551 Silicon High Speed Power Transistor DESCRIPTION T h e F T 2 5 5 1 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T ) technology. R E T devices are
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FT2551
FT1551,
FT1551
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Untitled
Abstract: No abstract text available
Text: Opto Semiconductors Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Vorläufige Daten/Preliminary Data t'- LO C \J cg 2o: e3 Emitter - t - î Sensor 1 Circuitry -o3 V 1o- -o4 GPX06992 C\J O
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GPX06992
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BD179 NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package,
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BD179
BD179
OT-32
OT-32
O-126)
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t125 switch
Abstract: BUK437-600B
Text: PHILIPS INTERNATIONAL bSE D E3 711085b OObaSBb 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110A2b
BUK437-600B
t125 switch
BUK437-600B
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