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    TRANSISTOR E304 Search Results

    TRANSISTOR E304 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR E304 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tr0032

    Abstract: TR0032C
    Text: SFT22907GW Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Dual Microminiature Package 600 mA 60 Volts Complimentary NPN & PNP Transistor DESIGNER’S DATA SHEET


    Original     		SFT22907GW 2N2222AU 2N2907AU SFT22907 SFT22907GW SFT2222 SFT2222 SFT2907 tr0032 TR0032C PDF

    110SL

    Abstract: Q67040-S4004-A2 BUZ110SL E3045
    Text: BUZ 110SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.01 Ω 80 A • Logic Level • dv/dt rated


    Original     		110SL BUZ110SL P-TO220-3-1 Q67040-S4004-A2 BUZ110SL E3045A P-TO263-3-2 Q67040-S4004-A6 E3045 110SL E3045 PDF

    Q67040-S4008-A2

    Abstract: BUZ103SL E3045 Q67040-S4008-A6 Q67040-S4008-A5
    Text: BUZ 103SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated


    Original     		103SL BUZ103SL P-TO263-3-2 Q67040-S4008-A6 BUZ103SL E3045 P-TO220-3-1 Q67040-S4008-A2 E3045A E3045 Q67040-S4008-A5 PDF

    BUZ104SL

    Abstract: E3045 Q67040-S4006-A2
    Text: BUZ 104SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.064 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 12.5 A • Logic Level • dv/dt rated


    Original     		104SL BUZ104SL P-TO263-3-2 Q67040-S4006-A6 BUZ104SL E3045 P-TO220-3-1 Q67040-S4006-A2 E3045A E3045 PDF

    101SL

    Abstract: BUZ101SL E3045 Q67040-S4012-A2 eas70
    Text: BUZ 101SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.04 Ω 20 A • Logic Level • dv/dt rated


    Original     		101SL BUZ101SL P-TO220-3-1 Q67040-S4012-A2 BUZ101SL E3045A P-TO263-3-2 Q67040-S4012-A6 E3045 101SL E3045 eas70 PDF

    BUZ100SL

    Abstract: E3045 Q67040-S4000-A2
    Text: BUZ 100SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.012 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 70 A • Logic Level • dv/dt rated


    Original     		100SL BUZ100SL P-TO220-3-1 Q67040-S4000-A2 BUZ100SL E3045A P-TO263-3-2 Q67040-S4000-A6 E3045 E3045 PDF

    111SL

    Abstract: BUZ111SL smd JH transistor BUZ111SL Application Notes E3045 BUZ111SLE3045A
    Text: BUZ 111SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.007 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 80 A • Logic Level • dv/dt rated


    Original     		111SL BUZ111SL P-TO220-3-1 Q67040-S4002-A2 BUZ111SL E3045A P-TO263-3-2 Q67040-S4002-A6 E3045 111SL smd JH transistor BUZ111SL Application Notes E3045 BUZ111SLE3045A PDF

    8055s

    Abstract: buz110s smd Q67040-S4005-A6 BUZ110S E3045 Q67040-S4005-A2
    Text: BUZ 110S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.01 Ω 80 A • dv/dt rated • 175 ˚C operating temperature


    Original     		BUZ110S P-TO263-3-2 Q67040-S4005-A6 BUZ110S E3045 P-TO220-3-1 Q67040-S4005-A2 E3045A 8055s buz110s smd E3045 PDF

    buz102s

    Abstract: 102S E3045 Q67040-S4011-A2 9070C FID60
    Text: BUZ 102S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.018 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 52 A • dv/dt rated • 175 ˚C operating temperature


    Original     		BUZ102S P-TO220-3-1 Q67040-S4011-A2 P-TO263-3-2 Q67040-S4011-A6 Q67040-S4011-A5 BUZ102S E3045 102S E3045 Q67040-S4011-A2 9070C FID60 PDF

    100S

    Abstract: BUZ100S E3045 Q67040-S4001-A2 FS25
    Text: BUZ 100S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 77 A • dv/dt rated • 175˚C operating temperature


    Original     		BUZ100S P-TO220-3-1 Q67040-S4001-A2 BUZ100S E3045A P-TO263-3-2 Q67040-S4001-A6 E3045 100S E3045 FS25 PDF

    103S

    Abstract: BUZ103S E3045 Q67040-S4009-A2
    Text: BUZ 103S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.036 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 31 A • dv/dt rated • 175 ˚C operating temperature


    Original     		BUZ103S P-TO263-3-2 Q67040-S4009-A6 BUZ103S E3045 P-TO220-3-1 Q67040-S4009-A2 E3045A 103S E3045 PDF

    BUZ104S

    Abstract: 104S E3045 Q67040-S4007-A2 12J8
    Text: BUZ 104S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated 55 V RDS on 0.08 Ω ID 13.5 A • dv/dt rated • 175 ˚C operating temperature


    Original     		BUZ104S P-TO263-3-2 Q67040-S4007-A6 BUZ104S E3045 P-TO220-3-1 Q67040-S4007-A2 E3045A 104S E3045 12J8 PDF

    buz101s

    Abstract: 101S E3045 Q67040-S4013-A2
    Text: BUZ 101S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.05 Ω 22 A • dv/dt rated • 175 ˚C operating temperature


    Original     		BUZ101S P-TO263-3-2 Q67040-S4013-A6 BUZ101S E3045 P-TO220-3-1 Q67040-S4013-A2 E3045A 101S E3045 PDF

    buz111S

    Abstract: E3045 Q67040-S4003-A2 BUZ 32 SMD Q67040-S4003-A6
    Text: BUZ 111S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.008 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 80 A • dv/dt rated • 175˚C operating temperature


    Original     		BUZ111S P-TO220-3-1 Q67040-S4003-A2 BUZ111S E3045A P-TO263-3-2 Q67040-S4003-A6 E3045 E3045 BUZ 32 SMD PDF

    smd transistor 43t

    Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
    Text: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018


    OCR Scan     		BUZ102S P-T0220-3-1 Q67040-S4011-A2 E3045A P-T0263-3-2 Q67040-S4011-A6 E3045 smd transistor 43t marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor smd code book transistor 43t SMD G1333 PDF

    smd transistor marking 7j

    Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
    Text: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current


    OCR Scan     		BUZ103S BUZ103S P-T0220-3-1 Q67040-S4009-A2 E3045A P-T0263-3-2 Q67040-S4009-A6 E3045 smd transistor marking 7j TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s diode marking code MU marking 684 diode smD PDF

    cc 3025 diode

    Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
    Text: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated


    OCR Scan     		BUZ110S BUZ110S P-T0220-3-1 Q67040-S4005-A2 E3045A P-TC263-3-2 Q67040-S4005-A6 E3045 cc 3025 diode 5T4 tube MC 140 transistor 8235 smd transistor h7 transistor smd marking CODE Wb transistor marking smd 7c PDF

    SMD TRANSISTOR MARKING 9f

    Abstract: H7 marking code smd BUZ101SL E3045 Q67040-S4012-A2 004II
    Text: BUZ 101SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ DS on Continuous drain current b • Avalanche rated ^DS 55 V 0.04 ii 20 A • Logic Level


    OCR Scan     		BUZ101SL_ P-TQ220-3-1 Q67040-S4012-A2 BUZ101SL E3045A P-TQ263-3-2 Q67040-S4012-A6 E3045 P-T0263-3-2 SMD TRANSISTOR MARKING 9f H7 marking code smd 004II PDF

    SQT-89

    Abstract: BUZ100SL E3045 Q67040-S4000-A2 smd code book la tube smd diode 27 5j Diode smd 5j
    Text: BUZ 100SL Inf ineon technologie» SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vfos • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.012 a 70 A b 55 V • Logic Level


    OCR Scan     		100SL BUZ100SL_ P-TQ220-3-1 Q67040-S4000-A2 BUZ100SL E3045A P-TQ263-3-2 Q67040-S4000-A6 E3045 SQT-89 smd code book la tube smd diode 27 5j Diode smd 5j PDF

    TRANSISTOR SMD MARKING CODE 702

    Abstract: 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd
    Text: Infineo n |m p ,° v e d technologies f c — BUZ 104SL • SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance f l DS on • Avalanche rated Continuous drain current


    OCR Scan     		BUZ104SL BUZ104SL P-T0220-3-1 Q67040-S4006-A2 E3045A P-T0263-3-2 Q67040-S4006-A6 E3045 TRANSISTOR SMD MARKING CODE 702 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd PDF

    smd transistor 43t

    Abstract: buz1025 MARKING SMD 43t st smd diode marking code BUZ SMD DIODE BOOK smd marking wds P-T0263-3-2 infineon 3330 BUZ 1025 E304
    Text: Infineon , m proved te c h n o lo g ie s BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current CO Features 55 V ñ DS on 0.018 Í 2


    OCR Scan     		BUZ102S BUZ102S P-T0220-3-1 Q67040-S4011-A2 E3045A P-T0263-3-2 Q67040-S4011-A6 E3045 smd transistor 43t buz1025 MARKING SMD 43t st smd diode marking code BUZ SMD DIODE BOOK smd marking wds infineon 3330 BUZ 1025 E304 PDF

    TRANSISTOR SMD MARKING CODE B7t

    Abstract: transistor marking b7t BU2104S transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t P-T0263-3-2 smd transistor marking JR marking b7t D1337
    Text: in tP ro BUZ104S tv e d * SIPMOS Power Transistor Product Summary Features « N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS V 55 ^DS on 0.08 ii b 13.5 A • du/df rated


    OCR Scan     		BUZ104S BU2104S P-T0220-3-1 Q67040-S4007-A2 BUZ104S E3045A P-T0263-3-2 Q67040-S4007-A6 E3045 TRANSISTOR SMD MARKING CODE B7t transistor marking b7t transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t smd transistor marking JR marking b7t D1337 PDF

    FDS 4800

    Abstract: smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 BUZ111SL TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457
    Text: BUZ 111SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f l DS on 0.007 n A 80 t> Continuous drain current • Avalanche rated 55 V • Logic Level


    OCR Scan     		111SL BUZ111SL P-T0220-3-1 Q67040-S4002-A2 E3045A P-T0263-3-2 Q67040-S4002-A6 E3045 FDS 4800 smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457 PDF

    TRANSISTOR SMD MARKING CODE 7B 6 pin

    Abstract: SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd BUZ110SL
    Text: BUZ 110SL Infineon t « c h n o I o g <e s SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS R DS on Id 55 V 0.01 a


    OCR Scan     		110SL BUZ110SL P-T0220-3-1 Q67040-S4004-A2 E3045A P-T0263-3-2 Q67040-S4004-A6 E3045 TRANSISTOR SMD MARKING CODE 7B 6 pin SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd PDF