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    TRANSISTOR EQUIVALENT M32 Search Results

    TRANSISTOR EQUIVALENT M32 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EQUIVALENT M32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    740F-080930

    Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
    Text: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications


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    PDF BFP740F 11b/g BFP620 AN171) 740F-080930 michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note LQP10A MTA-100 Miteq SMC-02 AN17-1

    3072 rohm

    Abstract: No abstract text available
    Text: TECHNICAL NOTE Ultra Small Headphone Amplifier Series Digital Input Hi-Fi Class-D Headphone Amplifier BU7839GVW ●Description Most suitable for long duration reproduction of digital audio because digital audio data is taken as its input and low power consumption is realized.


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    PDF BU7839GVW BU7839GVW 3072 rohm

    rohm 220uf

    Abstract: No abstract text available
    Text: TECHNICAL NOTE Ultra Small Headphone Amplifier Series Digital Input Hi-Fi Class-D Headphone Amplifier BU7839GVW ●Description Most suitable for long duration reproduction of digital audio because digital audio data is taken as its input and low power consumption is realized.


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    PDF BU7839GVW BU7839GVW rohm 220uf

    LQH32CN101K23

    Abstract: RSX201L-30 FS48K
    Text: Headphone Amplifiers Digital Input Class-D Headphone Amplifier BU7839GVW No.10102EAT03 ●Description Most suitable for long duration reproduction of digital audio because digital audio data is taken as its input and low power consumption is realized.BU7839GVW has Stereo Audio DAC and HP amp functions for digital audio playback.


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    PDF BU7839GVW 10102EAT03 BU7839GVW R1010A LQH32CN101K23 RSX201L-30 FS48K

    30591

    Abstract: 034Eh angle phase control TA210
    Text: APPLICATION NOTE M32C/83 Group Concept of the Three-phase Motor Control Program REJ05B0147-0120Z Rev.1.20 Jul 25, 2003 1. Abstract This application note describes the how to use three-phase motor control timer function, and application example. 2. Introduction


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    PDF M32C/83 REJ05B0147-0120Z 30591 034Eh angle phase control TA210

    30591

    Abstract: 30382 PWM MODIFIED SINE WAVE INVERTER CIRCUIT DIAGRAM 30381 solve three phase inverter in 180 degree 29935 32165 32-748
    Text: APPLICATION NOTE M32C/83 Group Concept of the Three-phase Motor Control Program using Intelligent I/O functions 1.0 Abstract This application note describes the concept of the three-phase motor control waveform output program using the function 2 and 3 of intelligent I/O.


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    PDF M32C/83 REJ05B0261-0100Z/Rev 30591 30382 PWM MODIFIED SINE WAVE INVERTER CIRCUIT DIAGRAM 30381 solve three phase inverter in 180 degree 29935 32165 32-748

    Transistor Equivalent m32

    Abstract: uPA1772
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1772 SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1772 is Dual P-Channel MOS Field Effect Transistor designed for power management applications of portable machines. 8 5 1 : Source 1


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    PDF PA1772 PA1772 PA1772G Transistor Equivalent m32 uPA1772

    M32 diode

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2713GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2713GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.


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    PDF PA2713GR PA2713GR 10ems, M32 diode

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    RB050M-30

    Abstract: C311 Transistor C311 Zener Transistor Equivalent m32 RB095B-30
    Text: BD81000MUV Power supply IC for TFT-LCD Panels For Large Current Load 7CH System Power Supply IC BD81000MUV No.12035EBT20 ●Description The BD81000MUV is a system power supply IC that provides control 6 power supply channels and 1 VCOM channel required for TFT-LCD panels on a single chip. Output voltage and start-up sequence is variable. In addition, this IC


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    PDF BD81000MUV 12035EBT20 BD81000MUV R1120A RB050M-30 C311 Transistor C311 Zener Transistor Equivalent m32 RB095B-30

    RB095B-30

    Abstract: No abstract text available
    Text: No.12035EBT20 Description The BD81000MUV is a system power supply IC that provides control 6 power supply channels and 1 VCOM channel required for TFT-LCD panels on a single chip. Output voltage and start-up sequence is variable. In addition, this IC incorporates Power Good output function.


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    PDF 12035EBT20 BD81000MUV 500kHz) R1120A RB095B-30

    RB050M-30

    Abstract: RB050M C311 Zener C311 Transistor M32 diode RB095B-30
    Text: Power supply IC for TFT-LCD Panels For Large Current Load 7CH System Power Supply IC BD81000MUV No.12035EBT20 ●Description The BD81000MUV is a system power supply IC that provides control 6 power supply channels and 1 VCOM channel required for TFT-LCD panels on a single chip. Output voltage and start-up sequence is variable. In addition, this IC


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    PDF BD81000MUV 12035EBT20 BD81000MUV R1120A RB050M-30 RB050M C311 Zener C311 Transistor M32 diode RB095B-30

    RB050M-30

    Abstract: C311 Transistor C311 Zener RB050M M31 transistor TMK105BJ103KV-F MP6M RB095B-30
    Text: Power supply IC for TFT-LCD Panels For Large Current Load 7CH System Power Supply IC BD81000MUV No.12035EBT20 ●Description The BD81000MUV is a system power supply IC that provides control 6 power supply channels and 1 VCOM channel required for TFT-LCD panels on a single chip. Output voltage and start-up sequence is variable. In addition, this IC


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    PDF BD81000MUV 12035EBT20 BD81000MUV R1120A RB050M-30 C311 Transistor C311 Zener RB050M M31 transistor TMK105BJ103KV-F MP6M RB095B-30

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    PNP Transistor 2N2222 equivalent

    Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
    Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510


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    PDF 1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching

    diode D07-15

    Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
    Text: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification


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    PDF 1N251 1N252 1N461 1N625 1N62G 1N814 1N903 1N903A 1N904 1N914 diode D07-15 diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 D07 15 DIODE 1N3605

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    beta transistor 2N2222

    Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


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    PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor

    2N2219 transistor substitute

    Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent