Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR ES 8 C36 Search Results

    TRANSISTOR ES 8 C36 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ES 8 C36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    schematic diagram analog tv tuner rca

    Abstract: dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017
    Text: ORDER NO.DSD0503040C2 DVD Video Recorder DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG Vol.1 Colour K .Black Type (S).Silver Type 2005 Matsushita Electric Industrial CO., Ltd. All rights reserved. Unauthorized copying and


    Original     		PDF DSD0503040C2 DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG schematic diagram analog tv tuner rca dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017

    AGR19180EF

    Abstract: JESD22-A114 Z111A
    Text: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF JESD22-A114 Z111A

    J307 FET

    Abstract: J307 transistor c35 equivalent IM335
    Text: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180E Hz--1990 AGR19180EU AGR19180EF Voltag48, DS02-377RFPP J307 FET J307 transistor c35 equivalent IM335

    J307 FET

    Abstract: AGR19180EF JESD22-A114 agere c8
    Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8

    J307 FET

    Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
    Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386

    LM324 SMD

    Abstract: LLC resonant full bridge schematic resonant full bridge schematic NCP4303 resonant half bridge schematic 1n5408 smd NCP1397 SMD resistor 01R NCP1605 SMD resistors 2r2
    Text: TND399/D Rev. 0, February-10 216 W All in One Power Supply Reference Design Featuring NCP1605, NCP1397 and NCP4303 Documentation 1 Intellectual Property is conveyed by the transfer of this documentation. This reference design documentation package is provided only to assist


    Original     		PDF TND399/D February-10 NCP1605, NCP1397 NCP4303 IEC61000-3-2 NCP1605: NCP1397: NCP4303: TLV431: LM324 SMD LLC resonant full bridge schematic resonant full bridge schematic NCP4303 resonant half bridge schematic 1n5408 smd SMD resistor 01R NCP1605 SMD resistors 2r2

    IGBT DRIVER SCHEMATIC 3 PHASE

    Abstract: No abstract text available
    Text: Reference Design Gate driver for M40x-M80x Power Modules GD-M40x-80x for NPC Modules Reference Design no.: RD_2014-12_001-v02 Table of Contents 1 In tr o d uc t i o n . 3


    Original     		PDF M40x-M80x GD-M40x-80x 001-v02 5040DFH-PNPSOT23; -TK100-0805-CM -TK100-0603; R-R510-1 -TK100-1210-PM; R-15K-1 -TK100-0805-PM; IGBT DRIVER SCHEMATIC 3 PHASE

    antena microondas

    Abstract: circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS
    Text: 4 Siemens AG 2014 Medida de nivel 4/2 Sinopsis de productos 4/9 Detección de nivel Sensores capacitivos Medición continua continuación Accesorios para sistemas ultrasónicos 4/185 – Bridas de fijación EA 4/187 – Soportes de montaje FMS 4/189 – Sensor de temperatura TS-3


    Original     		PDF LR200 CLS300 LR250 7ML1830-1HA 7ML1830-1MC 7ML1830-1MM antena microondas circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS

    DSA003127

    Abstract: C-38 IRGPC50S IGBT IRGPC50S
    Text: PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.6V


    Original     		PDF IRGPC50S 400Hz) O-247AC DSA003127 C-38 IRGPC50S IGBT IRGPC50S

    pec 632

    Abstract: IRGPC50S C-38
    Text: Previous Datasheet Index Next Data Sheet PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve


    Original     		PDF IRGPC50S 400Hz) O-247AC pec 632 IRGPC50S C-38

    IRGPC50S

    Abstract: C-38 TRANSISTOR ES 8 C36
    Text: PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.6V


    Original     		PDF IRGPC50S 400Hz) O-247AC IRGPC50S C-38 TRANSISTOR ES 8 C36

    RJ45 datasheet 8P8C

    Abstract: IBM simm 30-pin smd LD9 smd transistor ld3 motorola 30-pin simm memory dynamic 74ACT14D 74ACT74D AMD PCMCIA Flash Memory Card PC MOTHERBOARD CIRCUIT diagram of LG computers LED SMD 1206 INFRA RED
    Text: Freescale Semiconductor, Inc. MOTOROLA Motorola Semiconductor Israel Ltd. MICROPROCESSOR & MEMORY Freescale Semiconductor, Inc. CT OR , IN C.2 006 TECHNOLOGIES GROUP MIC ON DU MPC860ADS User’s Manual AR CH IVE DB YF RE ES CA LE SE Board Revision - ENG


    Original     		PDF MPC860ADS MPC860ADS, RJ45 datasheet 8P8C IBM simm 30-pin smd LD9 smd transistor ld3 motorola 30-pin simm memory dynamic 74ACT14D 74ACT74D AMD PCMCIA Flash Memory Card PC MOTHERBOARD CIRCUIT diagram of LG computers LED SMD 1206 INFRA RED

    transistor 2N1771

    Abstract: GE C220B ge c220e scr ge c220d c122d scr ge c220c ob 2268 Ria5 2N1770A C10U
    Text: GETYPE JEDEC C10 C11 C15 C 116 2N 1770A 77A 2N 1770-78 - - 25-400 25-600 25-600 C l 2 2 -3 * C220-2 C126 C36 C37 - - 2 N 1842-50 - 25-600 25 600 ELECTRICAL SPECIFICATIONS | VOLTAGE RANGE i 50-600 25-600 { 25-600 25-800 j 2b I FORWARD CONDUCTION It r m s


    OCR Scan     		PDF C220-2 2N1770A-77 2N1770-78 2N1842-50 transistor 2N1771 GE C220B ge c220e scr ge c220d c122d scr ge c220c ob 2268 Ria5 2N1770A C10U

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    TOSHIBA 2SA1213Y

    Abstract: S8520E50MC E50M 2SA1213Y MA737 IFR7606 c50mcb S-8520B36MC-ARV-T2 seiko 320 240 S-8520
    Text: Rev.7.4_io PWM Control & PWM/PFM Control Step-Down Switching Regulator-Controllers Q_R«9n/ft* 9 i <5 • " eries The S-8520/8521 Series consists of C M O S step-dow n sw itching regulatorcontrollers with P W M -control S-8520 and P W M /P F M -sw itched control (S8521). These devices contain a reference voltage source, oscillation circuit,


    OCR Scan     		PDF S-8520/8521 S-8520) S-8521) S-8520 S-8521 work-8521B30MC S-8521F33MC S-8521D50MC S-8521B50MC TOSHIBA 2SA1213Y S8520E50MC E50M 2SA1213Y MA737 IFR7606 c50mcb S-8520B36MC-ARV-T2 seiko 320 240

    c38 transistor

    Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
    Text: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.


    OCR Scan     		PDF D0b31t BLV948 OT262A2 MRC117 2x100 c38 transistor PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37

    2SA1763

    Abstract: A4-DCA015 C4168 A1753 transistor a1839 A1814 2SA1813 DCF015 2SC4413 2SC4694
    Text: M C P Mini Chip Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so sraal1-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ate V e r y li i g h f r e q u e n c y


    OCR Scan     		PDF 2SA1687/2SC4446 DCF015 DCA015 DCG015 DCB015 DSE015* DSA015 DSH015* DSB015 2SA1763 A4-DCA015 C4168 A1753 transistor a1839 A1814 2SA1813 2SC4413 2SC4694

    IRGPC50S

    Abstract: No abstract text available
    Text: PD - 9.694A International [1ÓRRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features c • Switchlng-loss rating includes all “tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGPC50S 400Hz) O-247AC

    Untitled

    Abstract: No abstract text available
    Text: International BUlRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.694A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGPC50S 400Hz) O-247AC 5S452

    Untitled

    Abstract: No abstract text available
    Text: SA0YO M CP Mini C h i p Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so small-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ole V e i - y h i g h


    OCR Scan     		PDF 2SA1688 2SA1857 2SC4399 2SC4400 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406

    a1764

    Abstract: 2SA1815 J2SK242 A1607 DS-17 SANYO
    Text: SANYO MCP Mini C h i p Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so small-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ate V t a t - y h i g h


    OCR Scan     		PDF 2SA1688 2SA1857 2SC4399 2SC4400 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC440fi a1764 2SA1815 J2SK242 A1607 DS-17 SANYO

    C3656

    Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
    Text: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)


    OCR Scan     		PDF 11-sized 2SA1676 /2SC4396 2SA1677 /2SC4397 2SA1678 /2SC4398 2SA1722 /2SC4498 2SA1341 C3656 C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396

    panasonic rx c39

    Abstract: fj series capacitor panasonic ECU-E1E102KBQ murata sfeca 10.7 CE CAPACITOR PANASONIC ERJ2GE0R00 SMD resistors 0402 SFECA smd transistor SOT-23 fj hc49/smd transistor lf
    Text: RF RF2905 Preliminary M ICRO-DEVICES 4 3 3 /8 6 8 /9 1 5 M H Z FM /FSK /A S K /O O K TR A N S C E IV E R T y p ic a l A p p lic a t io n s • Wireless Meter Reading • Wireless Data Transceiver • Keyless Entry Systems • Wireless Security Systems • 433/868/915MHz ISM Band Systems


    OCR Scan     		PDF RF2905 433/868/915MHZ RF2905 48-lead 915MHz 433MHz 868MHz panasonic rx c39 fj series capacitor panasonic ECU-E1E102KBQ murata sfeca 10.7 CE CAPACITOR PANASONIC ERJ2GE0R00 SMD resistors 0402 SFECA smd transistor SOT-23 fj hc49/smd transistor lf

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60