k455
Abstract: BUK455 BUK455-200A BUK455-200B T0220AB
Text: bTE D N AMER PHI LIP S/ DI SC R ET E • 0D30b50 Ô3D H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0D30b50
K455-200A/B
T0220AB
BUK455
-200A
-200B
-ID/100
k455
BUK455-200A
BUK455-200B
T0220AB
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xl 1225 transistor
Abstract: BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300
Text: nu. e „ • Philips Semiconductors 1— 1 b 1353131 0024123 21b ■ APX AMER PH IL IP S/D IS CR ET E Product specification L7E D NPN 7 GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband
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BFG135
OT223
MSB002
OT223.
xl 1225 transistor
BFG135 amplifier
transistor B 1184
BFG135
bfg135 scattering
transistor d 1557
603-30-1
BFG135 A amplifier
2222 379
UBB300
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transistor et 455
Abstract: No abstract text available
Text: SOT23 NPN SILICON F'LANAR HIGH PERFORMANCE TRANSISTOR ISSU E 3 - FEBRUARY 1996 FEATURES * 140 Volt V CE0 * 1 Amp continuous current * Ptot= 500 m W PARTMARKING D ET A IL- 455 ABSOLUTE M AXIMUM RATINGS. SYM BO L PARAM ETER VALUE UNIT Collector-Base Voltage
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2493 transistor
Abstract: BFG35 BFG55 UBB337
Text: •I Philips Sem iconductors — ^ 53^131 □ 0 iMfi3 b T T 3 H A P X N A PIER PHI LIP S /D IS C R ET E bVE p Product soeciflcation PNP 4 GHz wideband transistor FEATURES ^ BFG55 PINNING • High output voltage capability PIN • High gain bandwidth product
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BFG55
OT223
BFG35.
OT223.
2493 transistor
BFG35
BFG55
UBB337
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BUK455
Abstract: BUK455-400A BUK455-400B T0220AB
Text: N AMER SSE D P H I L I P S/ DI S CR ET E • 1^53^31 GQ20500 T ■ B U K 455-400A B U K 455-400B P o w erM O S tra n s isto r r - 5 7 - / 3 G E N E R A L D ESC R IP TIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK455
-400A
-400B
BUK455-400A
BUK455-400B
T0220AB
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BUK455-500B
Abstract: BUK455 BUK455-500A 25KW T0220AB RFTN-1
Text: N A ME R 2se d PHILIPS/DISCRETE • b t 53T 3i oa a D s i D a ■ PowerMOS transistor B U K 455-500A B U K 455-500B r - ^ 7 - GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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T-37-IS
BUK455
-500A
-500B
BUK455-500B
BUK455-500A
25KW
T0220AB
RFTN-1
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SCR 1989
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 2SE D ^53=131 QD2DS1D 2 • B U K 455-500A B U K 455-500B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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55-500A
455-500B
BUK455
-500A
-500B
00B0S14
SCR 1989
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2SC4552
Abstract: No abstract text available
Text: y ’ — • y — h - 1 > y U / \ ° 7 - Silicon Power Transistor 2SC4552 2SC 4552 i, isîÜ X 'f h 9 •/ y X ^ t'L o w VcE<sat T'hFE ^ ^ T ' ' D C / D C f-iX -^ c o L T A IÜ T -to ( M Ù l •’ mm) > n 10.0 + 0 .3 4.5 + 0.2 2.7 + 0.2 # m O hFE <( Î Ê VCE(sat) X ' " Ÿ o
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2SC4552
2SC4552
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nujira
Abstract: NCT-H4010 ERNI 024403 PD002412 power amplifier TRANSISTOR wcdma modulator crest factor reduction 1223 digital transistor envelope tracking Power amplifier SER2013-472
Text: coolteq.h NCT-H4010 High Voltage Modulator PRELIMINARY DATASHEET PD002412 Overview Nujira’s High Accuracy Tracking HAT Modulation technology uses advanced switching techniques to provide a high power, high bandwidth and high efficiency power supply to
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NCT-H4010
PD002412
NCT-H4010
10-20MHz
nujira
ERNI 024403
PD002412
power amplifier TRANSISTOR
wcdma modulator
crest factor reduction
1223 digital transistor
envelope tracking Power amplifier
SER2013-472
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transistor et 455
Abstract: transistor et 454
Text: N AMER PHI LI PS/ DI SCRETE DbE D PowerMOS transistor • bb53*131 0D147bb 7 ■ BCZ3$ l f - ~ _ 3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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0D147bb
T0218AA;
00147bT
T-39-13
BUZ351
001477E
transistor et 455
transistor et 454
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BUZ351
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE PowerMOS transistor = ObE D BUZ351 ^ ^ _ 3 • bki53ci31 0D147tt May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ351
T0218AA;
T-39-13
BUZ351
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1DI75E-120
Abstract: M206 B305
Text: 1DI75E-120 75 a lg ± s < r7 - * ì > z . - ) l ' ’ Outline Drawings POWER TRANSISTOR MODULE Features • MMJ± H igh Voltage • 7 U— KF*3i # • A S O ^ '/ a L' • Îê ÎiflS Including F re e w h e e lin g Diode Excellent Safe Operating Area Insulated Type
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1DI75E-120
M206
B305
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1736d
Abstract: No abstract text available
Text: 6DI75M-050 75A 'U ± '< h - y < 7 _ Y = 7 > '> ^ ^ ì>d. - ì V l £ f ' :£ ï > d , - ) v O utline Draw ings POWER TRANSISTOR MODULE F e a tu r e s • f f ih FE H igh DC C u rre n t Gain • H ig h S peed S w itc h in g : A p p lic a tio n s • ? G eneral P urpose Inverter
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6DI75M-050
e9Ti30S3
1736d
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN
Abstract: 180NM IBM
Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE
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11b/g
Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN
180NM IBM
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mitsumi 455KHz filter
Abstract: Ceramic filter 455khz murata 10.7Mhz ceramic filter "Ceramic Filter" 455khz ceramic filter 10.7MHz Murata 455KHz discriminator bt35f filter 455khz Mitsumi PVC tuning capacitor Mitsumi rf modulator
Text: A N 7234/S AN7234/S RF + FM IF + AM Tuner for Radio and Radio/Cassette Tape Recorder T h e sp ec ific a tio n h e re in a re su b jec t to change w ithout prio r n otice due to under d e v e lo p m e n t. R e fe r to o u r u p -to -d a te sp ecific atio n w h e n d iscu ssin g the final
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AN7234/S
AN7234
16-Lead
16-DIP)
AN7234S
105mVrms.
bT35flS2
AN7234/S
mitsumi 455KHz filter
Ceramic filter 455khz
murata 10.7Mhz ceramic filter
"Ceramic Filter" 455khz
ceramic filter 10.7MHz
Murata 455KHz discriminator
bt35f
filter 455khz
Mitsumi PVC tuning capacitor
Mitsumi rf modulator
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mitsumi 455KHz filter
Abstract: murata 10.7Mhz ceramic filter "Ceramic Filter" 455khz Ceramic filter 455khz filter 455khz CDA 10.7MHZ ceramic filter 10.7MHz Mitsumi PVC tuning capacitor Mitsumi 10.7MHZ COIL AM MODULATOR
Text: A N 7234/S AN7234/S RF + FM IF + AM Tuner for Radio and Radio/Cassette Tape Recorder T h e sp ec ific a tio n h e re in a re su b jec t to change w ithout prio r n otice due to under d e v e lo p m e n t. R e fe r to o u r u p -to -d a te sp ecific atio n w h e n d iscu ssin g the final
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AN7234/S
AN7234/S
AN7234
16-Lead
16-DIP)
AN7234S
105mVrms.
bT35flS2
mitsumi 455KHz filter
murata 10.7Mhz ceramic filter
"Ceramic Filter" 455khz
Ceramic filter 455khz
filter 455khz
CDA 10.7MHZ
ceramic filter 10.7MHz
Mitsumi PVC tuning capacitor
Mitsumi 10.7MHZ COIL
AM MODULATOR
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UBIQUITI
Abstract: transistor FFD 455 H.264 SVC codec storm-1 h.264 encoder H.264 encoder ethernet JPEG2000 SP16 scalable video coding people counting
Text: White Paper Stream Processing: Enabling a new class of easy to use, high-performance parallel DSPs "By re-thinking the roles of the architecture, programming model and compiler tools, SPI has created a new class of DSPs that makes parallel processing practical."
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transistor et 455
Abstract: ultra low noise transistor 003Hz SSM2220 low noise audio transistor op 20db 8MHZ AN-136 OP-27 SSM-2220 200Khz bandwidth
Text: ANALOG ► DEVICES AN-136 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 « 617/329-4700 An Ultra Low Noise Preamplifier by M. Jachowski Achieving the maximum usable dynamic range from low output level transducers such as audio microphones, magnetic pick
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AN-136
200kHz
SSM-2220
v/20kHz
20kHz
57nVRMi
70-5nV
l26nVMM.
transistor et 455
ultra low noise transistor
003Hz
SSM2220
low noise audio transistor
op 20db 8MHZ
OP-27
200Khz bandwidth
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split-gate flash
Abstract: NAND read disturb markov sl 100 sem vlsi tech
Text: Charge-Gain Program Disturb Mechanism in Split-Gate Flash Memory Cell V. Markov, K. Korablev, A. Kotov, X. Liu, Y.B. Jia, T.N. Dang, and A. Levi Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 408-523-8506; fax: 408-736-4409; e-mail: vmarkov@sst.com
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EVK31-050
Abstract: M190G J3E diode 30H3 M201 P460 T151 MTM M201
Text: EVK31-O5O 50a • S ± / < 7 - je ì >j . - ; u W M ’t H / < 7 — : Outline Drawings POWER TRANSISTOR MODULE : Features • 7 U —jJW U ' s W 4 • hFE^Siv,' • IfeÎ&Tfé — K rtS I Including Free Wheeling Diode High DC Current Gain Insulated Type
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EVK31-O5O
E82988
l95t/R89
EVK31-050
M190G
J3E diode
30H3
M201
P460
T151
MTM M201
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transistor et 455
Abstract: ZIX690B T092 ZSM561 T0921 diode L04C
Text: SUPPLY VOLTAGE ZSM561 MONITOR ISSUE 2- NOVEMBER 1995 DEVICE DESCRIPTION The device is available in a T092 package for through hole applications as wall as S08 and SOT223 for surface mount requirements. The ZSM561 is a three terminal under voltage monitor circuit for use in microprocessor
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ZSM561
OT223
ZSM561
ZIX690B
transistor et 455
T092
T0921
diode L04C
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aps-c cmos sensor
Abstract: KAI-11000 cmos transistor 0.35 um photodiode linear array CMOS digital image sensor CMOS Sensor APS-C KTC AL PHOTODIODE current voltage amplifier array photon imaging sensors silicon photodiode array
Text: A 14 Mpixel 36 x 24 mm2 Image Sensor, presented Electronic Imaging 21 Jan 2004, San Jose CA; SPIE proceedings vol. A 14 MPixel 36 x 24 mm2 Image Sensor Guy Meynants, Danny Scheffer, Bart Dierickx, Andre Alaerts FillFactory, Schaliënhoevedreef 20b, B-2800 Mechelen, Belgium
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B-2800
KAI-11000M
aps-c cmos sensor
KAI-11000
cmos transistor 0.35 um
photodiode linear array
CMOS digital image sensor
CMOS Sensor APS-C
KTC AL
PHOTODIODE current voltage amplifier array
photon imaging sensors
silicon photodiode array
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B426
Abstract: No abstract text available
Text: 6 D I5 0 M -1 2 0 5 0 a '<n — POWER TRANSISTOR MODULE Features W ffi-fk • High Arm Short Circuit Capability • High DC Current Gain • 7U— — KrtflS Including Freewheeling Diode • f l & i I n s u l a t e d Type Applications • — 9 General Purpose Inverter
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l95t/R89
B426
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