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    TRANSISTOR F 370 Search Results

    TRANSISTOR F 370 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F 370 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9011 transistor

    Abstract: 9011 NPN transistor 9011 G
    Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    9011 transistor

    Abstract: 9011 npn 9011 NPN transistor f 9011 h transistor transistor 9011 h 9011 9011 g f f 9011
    Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    NTE488

    Abstract: No abstract text available
    Text: NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz


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    PDF NTE488 NTE488 175MHz

    9011 transistor

    Abstract: 9011 ic CD4081 pin diagram datasheet 9011 G 9011 npn transistor 9011 h
    Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original
    PDF

    9011 transistor

    Abstract: 9011 NPN transistor 9011 npn f 9011 h transistor 9011 f 9011 f transistor
    Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF

    LT1001A

    Abstract: transistor 335
    Text: LT1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B C 45° ØA ØD DESCRIPTION: E The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications. F H G MAXIMUM RATINGS 200 mA IC DIM PDISS


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    PDF LT1001A ASILT1001A LT1001A transistor 335

    bi 370 transistor

    Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j
    Text: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F*9ÜcN P N i 1J 3 > F 5 >•$>;*? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o


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    PDF CycleS50 SC-43B bi 370 transistor JNI Corporation AA1A4p bi 370 transistor e PA33 nec j

    62003F

    Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
    Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F


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    PDF 40Series, 226Devices) 62003P/PA 2003A 2004A 62003F/FB/ 62004F/FB/ 16bit TB62705BF DIP24 62003F 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852

    BFX60

    Abstract: Transistor BFX 90 bfx 63 Q60206-X60
    Text: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge­ häuse elektrisch isoliert.


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    PDF BFX60 Q60206-X60 Transistor BFX 90 bfx 63 Q60206-X60

    Transistor BFX 59

    Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4
    Text: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher


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    PDF Q60206-X Transistor BFX 59 BFX59F BFX59 kbr 1000 transistor BFX59 transistor w 04 59 Transistor BFX 4

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in U H F band 7.2 volts operation applications. C 1 .5 M A X Dimensions in mm


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    PDF 2SC3629 2SC3629 520MHz,

    2SA1798

    Abstract: K 4005 transistor
    Text: I O rdering num ber: EN3709 z I SAMYO i 2SA1798 No.3709 f PN P Epitaxial P lan ar Silicon Transistor 20V/8A Switching Applications I F e a tu re s • Adoption of MBIT processes. • Low saturation voltage. • F ast switching speed. • Large current capacity.


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    PDF EN3709 2SA1798 2SA1798 K 4005 transistor

    2SA1151

    Abstract: 2SC2718 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF
    Text: Silicon Transistor 2 S A 1151 ' PNPx f □V \= 7 's i> 7 .9 fe m m iis m m PNP Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use PACKAGE DIMENSIONS f t * / FEATURES O ¡¡SI r^i ^ \ Unit : mm) V ceo . 50 V ^ ^ |V| | |J ^• o 2SC2718 1=> yyui)/ > ?>


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    PDF 2SA1151 2SC2718 2SA1151 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF

    2N3948

    Abstract: No abstract text available
    Text: MO T O R O L A SC XSTRS/R F 4bE D • b3b72St4 00^403^ *1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3948 The R F Line 1.0 W - 400 MHz HIGH FREQUENCY TRANSISTOR N PN S IL IC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier applications i n industrial and com*


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    PDF b3b72St4 2N3948 2N3948

    VHF power TRANSISTOR PNP TO-39

    Abstract: LN 7904 i31n mm4018
    Text: I MOTOROLA SC XSTRS/R MbE D F h3b?2S4 G Q tm 2 3 t i MOTOROLA r SEMICONDUCTOR TECHNICAL DATA - 3 ^ HOTb n MM4018 T h e R F L in e \q 9 = - 4 0 0 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . designed for amplifier, frequency multiplier or oscillator appli­


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    PDF MM4018 VHF power TRANSISTOR PNP TO-39 LN 7904 i31n mm4018

    2SA1612

    Abstract: No abstract text available
    Text: NEC j > y = l > Y = ÿ > i > 7 . 9 Silicon Transistor 2 S A 1 6 1 2 PNP Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier mm; 7" 1J V KICffl £ L T f t S T f „ o M 'h m f t -m v h O, 2 . 1 ± 0. 1 1 .2 5 ± 0 . 1 O h FE : 500 T Y P . I c = — 1 . 0


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    PDF 2SA1612 2SC41801 SC-70 2SA1612

    SC2334

    Abstract: fls09 1444 G 92-0151 2SA1010
    Text: NEC j \ f x > i / < 7 - Silicon Power Transistor A 2 P N P I t°i'+S'T./UJKS«' U 3 > h v S A 1 1 ^ S i i S J a iS W B E x - f ' y f v iS t ffl PNP Silicon Epitaxial Transistor High Speed High Voltage Switching Industrial Use 2 S A 1010 i i g J t i S i t B E X ^


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    PDF 2SA1010 SC2334 SC2334 fls09 1444 G 92-0151 2SA1010

    AF280

    Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
    Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:


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    62706f

    Abstract: TD62705P TD62706P 62706P
    Text: SILICON MONOLITHIC TD62705P/F TD62706P/F BIPO LAR DIGITAL INTEGRATED CIRCUIT 6CH HIGH-VOLTAGE SOURCE DRIVER The TD62705P, TD62705F and TD62706P, TD62706F are comprised of six source current transistor array. These drivers are specifically designed for fluorescent


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    PDF TD62705P/F TD62706P/F TD62705P, TD62705F TD62706P, TD62706F TD62705P TD62706P DIP16-P-300A 62706f TD62706P 62706P

    Untitled

    Abstract: No abstract text available
    Text: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high


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    PDF AT-32063 OT-363 AT-32063 OT-363 5965-1234E 5965-8921E 4447SA4

    BCW88

    Abstract: C370 Q62702
    Text: BCW88 PNP Silicon planar AF transistor The epitaxial silicon planar A F transistor in its hermetically sealed glass/ceramic flat package is especially suited for use in military and space applications. The advantage of this particular package lies in its high packing density.


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    PDF BCW88 Q62702â 100mA; BCW88 C370 Q62702

    MPT100

    Abstract: No abstract text available
    Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &


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    transistor d 1557

    Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
    Text: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly


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    PDF fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S

    2N5160

    Abstract: 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516
    Text: I MOTOROLA SC XSTRS/R F 4 bE b 3 b 7254 D 00=14075 7 MOTOROLA m o T b " P 3 3 - I 7 - • SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line If = -4 0 0 m A POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR P N P S ILIC O N . . . designed fo r am plifier, frequency m ultiplier or oscillator applica­


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    PDF b3b7254 2N5160 2N3866 MIL-S-19500 MRF5160HX, MRF51 2N5160 300-MHz 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516