TRANSISTOR F 370 Search Results

TRANSISTOR F 370 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR F 370 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
9011 transistor Abstract: 9011 NPN transistor 9011 G Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original		PDF
9011 transistor Abstract: 9011 npn 9011 NPN transistor f 9011 h transistor transistor 9011 h 9011 9011 g f f 9011 Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original		PDF
NTE488 Abstract: No abstract text available Text: NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz	Original	NTE488 NTE488 175MHz	PDF
9011 transistor Abstract: 9011 ic CD4081 pin diagram datasheet 9011 G 9011 npn transistor 9011 h Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original		PDF
9011 transistor Abstract: 9011 NPN transistor 9011 npn f 9011 h transistor 9011 f 9011 f transistor Text: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original		PDF
LT1001A Abstract: transistor 335 Text: LT1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B C 45° ØA ØD DESCRIPTION: E The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications. F H G MAXIMUM RATINGS 200 mA IC DIM PDISS	Original	LT1001A ASILT1001A LT1001A transistor 335	PDF
bi 370 transistor Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j Text: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F9ÜcN P N i 1J 3 > F 5 >•$>;? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o	OCR Scan	CycleS50 SC-43B bi 370 transistor JNI Corporation AA1A4p bi 370 transistor e PA33 nec j	PDF
62003F Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852 Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r \|Tra n s i st o r\| TD62 xxx rray\| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F	OCR Scan	40Series, 226Devices) 62003P/PA 2003A 2004A 62003F/FB/ 62004F/FB/ 16bit TB62705BF DIP24 62003F 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852	PDF
BFX60 Abstract: Transistor BFX 90 bfx 63 Q60206-X60 Text: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge häuse elektrisch isoliert.	OCR Scan	BFX60 Q60206-X60 Transistor BFX 90 bfx 63 Q60206-X60	PDF
Transistor BFX 59 Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4 Text: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher	OCR Scan	Q60206-X Transistor BFX 59 BFX59F BFX59 kbr 1000 transistor BFX59 transistor w 04 59 Transistor BFX 4	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in U H F band 7.2 volts operation applications. C 1 .5 M A X Dimensions in mm	OCR Scan	2SC3629 2SC3629 520MHz,	PDF
2SA1798 Abstract: K 4005 transistor Text: I O rdering num ber: EN3709 z I SAMYO i 2SA1798 No.3709 f PN P Epitaxial P lan ar Silicon Transistor 20V/8A Switching Applications I F e a tu re s • Adoption of MBIT processes. • Low saturation voltage. • F ast switching speed. • Large current capacity.	OCR Scan	EN3709 2SA1798 2SA1798 K 4005 transistor	PDF
2SA1151 Abstract: 2SC2718 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF Text: Silicon Transistor 2 S A 1151 ' PNPx f □V \= 7 's i> 7 .9 fe m m iis m m PNP Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use PACKAGE DIMENSIONS f t * / FEATURES O ¡¡SI r^i ^ \ Unit : mm) V ceo . 50 V ^ ^ \|V\| \| \|J ^• o 2SC2718 1=> yyui)/ > ?>	OCR Scan	2SA1151 2SC2718 2SA1151 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF	PDF
2N3948 Abstract: No abstract text available Text: MO T O R O L A SC XSTRS/R F 4bE D • b3b72St4 00^403^ 1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3948 The R F Line 1.0 W - 400 MHz HIGH FREQUENCY TRANSISTOR N PN S IL IC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier applications i n industrial and com	OCR Scan	b3b72St4 2N3948 2N3948	PDF

VHF power TRANSISTOR PNP TO-39 Abstract: LN 7904 i31n mm4018 Text: I MOTOROLA SC XSTRS/R MbE D F h3b?2S4 G Q tm 2 3 t i MOTOROLA r SEMICONDUCTOR TECHNICAL DATA - 3 ^ HOTb n MM4018 T h e R F L in e \q 9 = - 4 0 0 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . designed for amplifier, frequency multiplier or oscillator appli	OCR Scan	MM4018 VHF power TRANSISTOR PNP TO-39 LN 7904 i31n mm4018	PDF
2SA1612 Abstract: No abstract text available Text: NEC j > y = l > Y = ÿ > i > 7 . 9 Silicon Transistor 2 S A 1 6 1 2 PNP Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier mm; 7" 1J V KICffl £ L T f t S T f „ o M 'h m f t -m v h O, 2 . 1 ± 0. 1 1 .2 5 ± 0 . 1 O h FE : 500 T Y P . I c = — 1 . 0	OCR Scan	2SA1612 2SC41801 SC-70 2SA1612	PDF
SC2334 Abstract: fls09 1444 G 92-0151 2SA1010 Text: NEC j \ f x > i / < 7 - Silicon Power Transistor A 2 P N P I t°i'+S'T./UJKS«' U 3 > h v S A 1 1 ^ S i i S J a iS W B E x - f ' y f v iS t ffl PNP Silicon Epitaxial Transistor High Speed High Voltage Switching Industrial Use 2 S A 1010 i i g J t i S i t B E X ^	OCR Scan	2SA1010 SC2334 SC2334 fls09 1444 G 92-0151 2SA1010	PDF
AF280 Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:	OCR Scan		PDF
62706f Abstract: TD62705P TD62706P 62706P Text: SILICON MONOLITHIC TD62705P/F TD62706P/F BIPO LAR DIGITAL INTEGRATED CIRCUIT 6CH HIGH-VOLTAGE SOURCE DRIVER The TD62705P, TD62705F and TD62706P, TD62706F are comprised of six source current transistor array. These drivers are specifically designed for fluorescent	OCR Scan	TD62705P/F TD62706P/F TD62705P, TD62705F TD62706P, TD62706F TD62705P TD62706P DIP16-P-300A 62706f TD62706P 62706P	PDF
Untitled Abstract: No abstract text available Text: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high	OCR Scan	AT-32063 OT-363 AT-32063 OT-363 5965-1234E 5965-8921E 4447SA4	PDF
BCW88 Abstract: C370 Q62702 Text: BCW88 PNP Silicon planar AF transistor The epitaxial silicon planar A F transistor in its hermetically sealed glass/ceramic flat package is especially suited for use in military and space applications. The advantage of this particular package lies in its high packing density.	OCR Scan	BCW88 Q62702â 100mA; BCW88 C370 Q62702	PDF
MPT100 Abstract: No abstract text available Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &	OCR Scan		PDF
transistor d 1557 Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S Text: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly	OCR Scan	fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S	PDF
2N5160 Abstract: 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516 Text: I MOTOROLA SC XSTRS/R F 4 bE b 3 b 7254 D 00=14075 7 MOTOROLA m o T b " P 3 3 - I 7 - • SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line If = -4 0 0 m A POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR P N P S ILIC O N . . . designed fo r am plifier, frequency m ultiplier or oscillator applica	OCR Scan	b3b7254 2N5160 2N3866 MIL-S-19500 MRF5160HX, MRF51 2N5160 300-MHz 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516	PDF

TRANSISTOR F 370 Search Results

TRANSISTOR F 370 Result Highlights (5)

TRANSISTOR F 370 Datasheets Context Search

9011 transistor

9011 transistor

NTE488

9011 transistor

9011 transistor

LT1001A

bi 370 transistor

62003F

BFX60

Transistor BFX 59

Untitled

2SA1798

2SA1151

2N3948

VHF power TRANSISTOR PNP TO-39

2SA1612

SC2334

AF280

62706f

Untitled

BCW88

MPT100

transistor d 1557

2N5160