7H diode
Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1, W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO
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Original
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IPA50R140CP
799EH
7H diode
IPA50R140CP
DIODE marking ED X9
diode marking BEM
LM7m
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MRF227
Abstract: MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G
Text: MOTOROLA SC XSTRS/R F 4bE D b3b72S4 0£m 50fl 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF227 The RF Line 3 W - 225 MHz R F POWER TRANSISTOR NPN SILIC ON NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt large-signal power amplifier applica
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b3b72S4
MRF227
T0-206A
O-391
MRF227
MRF227 equivalent
420 NPN Silicon RF Transistor
transistor 7905
J 420 G
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2N3948
Abstract: No abstract text available
Text: MO T O R O L A SC XSTRS/R F 4bE D • b3b72St4 00^403^ *1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3948 The R F Line 1.0 W - 400 MHz HIGH FREQUENCY TRANSISTOR N PN S IL IC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier applications i n industrial and com*
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b3b72St4
2N3948
2N3948
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2N5160
Abstract: 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516
Text: I MOTOROLA SC XSTRS/R F 4 bE b 3 b 7254 D 00=14075 7 MOTOROLA m o T b " P 3 3 - I 7 - • SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line If = -4 0 0 m A POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR P N P S ILIC O N . . . designed fo r am plifier, frequency m ultiplier or oscillator applica
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b3b7254
2N5160
2N3866
MIL-S-19500
MRF5160HX,
MRF51
2N5160
300-MHz
2N5160 MOTOROLA
MRF5160
MRF*5160
MRF5160HX
2N3866
MRF5160HXV
J0240
RIA 39 transistor
MRF516
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2SK680
Abstract: 2sk68 TRANSISTOR DG S-10 tc6106
Text: M O S Field Effect Power Transistor 2SK680Ü, N - f ?Wb|ÊÉ ^“'7 - M 0 S F E T T ', J : £ i f i f ê l i I ! j * r 5 T t b £ : x -i v - f > i , ^ 7 i t i t i 5 V t l# JC « ( ¥ f i 4 .5 ± 0 .1 X T 't„ f f if t - C V 'S f c t f ) , T : m m ) ?
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2SK680
2SK680Ã
Cycled50
0-47L
2SK680
2sk68
TRANSISTOR DG S-10
tc6106
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SC4179 FM /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f-j- = 250 MHz TYP. • Low O utput Capacitance: CQb = 1.8 pF TYP. • Low Noise Figure: NF * 2.0 dB TYP.
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2SC4179
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MGF4310
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .
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4310E
F4319E
MGF4310E
MGF4314E
MGF4318E
GF4319E
MGF4310
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PDF
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FMMT918
Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
Text: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid
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FMMT918
OT-23
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
BCW67B
FMMT-A42
BCW67C
FMMT918
marking of m7 diodes
transistor EH sot-23
A12 marking
sot-23 MARKING CODE G1
3B sot23 marking
m6 marking transistor sot-23
ferranti
marking code CB sot23
transistor marking code 7E SOT-23
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP321 ,TLP321 -2JLP321-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T• I P■ 3IMF7 1■ g T■ I P■ 3MP7 1 - ? g TU I P■ 3IM7 - Æ■ F 1■ PRO GRAM M ABLE CONTROLLERS DC-OUTPUT MODULE TELECOMMUNICATION The TOSHIBA TLP321, -2 and -4 consist of a photo-transistor
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TLP321
TLP321
-2JLP321-4
TLP321,
TLP321-2
TLP321-4
TLP321-2JLP321-4
-2JLP321
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L147F
Abstract: mo9t Transistor 3-347 UL147F 3-347 transistor ADE 450
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet B U M 47* BUL147F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications *Moton>la Pr*f«rr*d D *vic* POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state-of-the-art die designed
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BUL147/BUL147F
O-220
O-220
BUL147F,
22mperature
L147F
mo9t
Transistor 3-347
UL147F
3-347 transistor
ADE 450
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MJ12005
Abstract: MJ12005 MOTOROLA MR918 4229P-L00-3C8 POT CORE 4229P-L00 4229PL00-3C8 motorola mj12005 Motorola mr918
Text: MOTOROLA SC XSTRS/R F 15E D I L3t?aSM QOflSQTS 7 | MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA 8 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR . . . s p e c ific a lly designed fo r use in d e fle c tio n c irc u its . • V c E X = 1500 V
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MR918
4229P-L00-3C8
MJ12005
MJ12005 MOTOROLA
MR918
POT CORE 4229P-L00
4229PL00-3C8
motorola mj12005
Motorola mr918
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2SA1871
Abstract: 2SC4942 TC789
Text: — S 7 • 5/— h '> U =3 > h^ Silicon Transistor 2SC4942 N P N = Ü £ t m S ' y =1 v h ^ r s jîf fiÎ/ d E - X ' ' f 2SC4942 i B i i Î J Î S W Œ X ^ f- > ?" • l^ — ^ -y^f X ^ 'y -y ( W i • m m D C / D C ^ > '< — ? & t * 6 D X ' f ' y ^ >
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2SC4942
2SA1871
IEI-620)
2SC4942
TC789
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BUX13
Abstract: transistor BUX Thomson CSF BUX 115
Text: * B U X 13 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N SIS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^ P re fe rre d device Dispositif recommandé High speed, high current, high pow er transistor Transistor de puissance rapide, fo rt courant
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BUX13
CB-19
BUX13
transistor BUX
Thomson CSF
BUX 115
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & *1 f t UL VDE C SA SETI ® ® ® 8EMKO DEMKO NEMKO BABT GlobalOptoisolatorTV 6-Pin DIP Optoisolators Transistor Output MCT2 MCT2E [CTR •20% Min] The M CT and M CT2E devices consist of a gallium arsenide Infrared emitting
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MJ10016HX
Abstract: No abstract text available
Text: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall
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b3b72S4
MJ10016HX,
MJ10016HX
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PDF
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Untitled
Abstract: No abstract text available
Text: • 4305571 00544A5 T3b ■ H a r r i s January 1993 HAS R F A 1 N 5 E N-Channel Enhancement-Mode Power Field-Effect Transistor MegaFET Package Features • 1 0 0 A, 50 V • rD S(on) = 0 .0 0 8 f l D R A IN • E lectro static D ischarge Rated • UiS S O A Rating C urve (Single Pulse)
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00544A5
23e-12
55e-9
14e-9)
37e-5)
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PDF
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sot-23 MARKING CODE G1
Abstract: C5 MARKING TRANSISTOR sot 23 marking code 2t BFS20 sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes
Text: FERRANTI semiconductors BFS20 NPN Silicon Planar VHF Transistor DESCRIPTION These devices are intended fo r IF and V H F applications w here lo w feedback capacitance is required. Encapsulated in the popular SOT-23 package these devices are designed specifically fo r use in thin and thick film
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BFS20
OT-23
BFS20
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
BCW67B
FMMT-A42
sot-23 MARKING CODE G1
C5 MARKING TRANSISTOR
sot 23 marking code 2t
sot-23 Marking G1
MARKING CODE DH SOT 23
marking code C5 sot23
marking H6 sot 23
marking code CB sot23
marking of m7 diodes
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PDF
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I348
Abstract: TMDB IRFM360 SS452 I-348
Text: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM36Q ;n N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e H E X F E T ® technology is the key to International Part N um ber
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IRFM360
IRFM360D
IRFM360U
O-254
MIL-S-19500
I348
TMDB
IRFM360
SS452
I-348
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PDF
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2N6790
Abstract: diode RA 225 R
Text: 2N6790 23 HARRIS N-Channel Enhancement-Mode Power MOS Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 3.5A, 200V * rD S on = 0 -8 n * S O A is P ow er-D issip atio n Lim ited SOURCE • N anosecond Switching S peeds GATE _
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2N6790
T0-205A
LHQ063
2N6790
diode RA 225 R
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current mirrors wilson
Abstract: 8E-15 2N3906 EP2015ACN EP2015C EP2015CM EP2015CN MPQ3906 TPQ3906 PNP Monolithic Transistor Pair
Text: EP2015C/EP2015AC HIGH PERFORMANCE ANALOG INTEGRATED ClRCunS FastQuad PNP Array F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides A.C. performance
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EP2015C/EP2015AC
2N3906
TPQ3906
MPQ3906
EP2015CN
MDP0031
EP2015ACN
EP2015CM
20-Lead
current mirrors wilson
8E-15
2N3906
EP2015C
MPQ3906
PNP Monolithic Transistor Pair
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PDF
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SAI SOT23
Abstract: T-589 5C500
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE3 - OCTOBER 1995 FMMT489 G It FEATURES * V ery lo w e q u iv a le n t on -re sista rice ; RCE 5at 175m£). CO M PLEM ENTARY TYPE - F M M T589 PARTM ARKING DETAIL - 489 a t 1A PARAMETER SYMBOL VALUE UNIT
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FMMT489
100mAJ
200mA*
100mA*
100MHz
FMMT449
SAI SOT23
T-589
5C500
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N12111
Abstract: ir 9214 TP 9212 F 9214 9218 9214
Text: Transistors with built-in Resistor UN9211 / 921 E/921 F/921 K/921 L/UNR921 M/921 N/921AJ/921BJ/921CJ Silicon NPN epitaxial planer transistor U nit: mm For digital circuits • Features • Costs can be reduced through downsizing of the equipment and
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UN9211
/9214/9215/9216/9217/9218/9219/9210/921DI
E/921
F/921
K/921
L/UNR921
M/921
N/921AJ/921BJ/921CJ
UN9212
N12111
ir 9214
TP 9212
F 9214
9218
9214
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uPA604T
Abstract: IC-8413 PA604T T540 25bgie
Text: I z\> Silicon Transistor ¿¿PA604T ^PA604T ü , KM m ì : mm) Yÿ>î SX9 * 2 m & f t M L t z i H ë Ü lt w r ê ii, x H 4# c o B iJ M ìc m ÌK L i t » « V s t 15] O S C - 5 9 '-f-y y h ÿ 9 > -^X t o^PA605T £ 2 tv- 'i XCO'< ~y 'r - v C 0 Ï& I* ];*
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uPA604T
PA604T
PA605T
IEI-620)
IC-8413
PA604T
T540
25bgie
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PDF
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sn29601
Abstract: SN7400J 9601C Direct Replacement DALLAS SN7404J SN7410J SN29002 SN29003 SN29004 Sn2960
Text: SERIES 29000 TRANSÌSTOR-TRANSISTOR LOGIC jdescription Senes 2 9 0 0 0 devices are designed to be used in existing systems as replacments fo r 9 0 0 0 -ty p e circuits. Series 2 9 0 0 0 circuits o ffe r several significant advantages over 9 0 0 0 type circuits, some o f w hich are:
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9000-type
RL-400fi
sn29601
SN7400J
9601C
Direct Replacement DALLAS
SN7404J
SN7410J
SN29002
SN29003
SN29004
Sn2960
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