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    TRANSISTOR F13 70 Search Results

    TRANSISTOR F13 70 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F13 70 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HM-65262

    Abstract: No abstract text available
    Text: HM-65262/883 TM 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/85ns Max


    Original     		HM-65262/883 MIL-STD883 70/85ns 125oC HM-65262 PDF

    Untitled

    Abstract: No abstract text available
    Text: TS7900 Series 3-Terminal Fixed Negative Voltage Regulator TO-220 ITO-220 Pin Definition: 1. Ground 2. Input tab 3. Output General Description The TS7900 series of fixed output negative voltage regulators are intended as complements to the popular TS7800


    Original     		TS7900 O-220 ITO-220 TS7800 PDF

    HM-65262

    Abstract: No abstract text available
    Text: HM-65262/883 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris


    Original     		HM-65262/883 MIL-STD883 HM-65262/883 HM-65262 PDF

    HM1-65262

    Abstract: HM-65262
    Text: HM-65262/883 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil


    Original     		HM-65262/883 MIL-STD883 HM-65262/883 HM1-65262 HM-65262 PDF

    dynamic ram binary cell

    Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
    Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of


    Original     		HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC PDF

    HM1-65642/883

    Abstract: 80C86 80C88 HM65642C
    Text: HM-65642/883 S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell


    Original     		HM-65642/883 MIL-STD883 150ns HM1-65642/883 80C86 80C88 HM65642C PDF

    SDA3202

    Abstract: 3006X6 SMD TRANSISTOR N12 GPS05119 Q67000-H5113 Q67006-H5113 sda 3202 prescaler smd transistor marking ip SDA 3202 TRANSISTOR SMD MARKING CODE n9
    Text: MGP 3006X6 GHz PLL with I2C Bus and Four Chip Addresses Bipolar IC Features ● ● ● ● ● ● 1-chip system for MPU-control I2C Bus 4 programmable chip addresses Short pull-in time for quick channel switch-over and optimized loop stability 3 high-current band switch outputs (20 mA)


    Original     		3006X6 P-DSO-16-1 Q67000-H5113 Q67006-H5113 P-DSO-16-1 3006X6 SDA3202 SMD TRANSISTOR N12 GPS05119 Q67000-H5113 Q67006-H5113 sda 3202 prescaler smd transistor marking ip SDA 3202 TRANSISTOR SMD MARKING CODE n9 PDF

    HM465642B

    Abstract: DQ420
    Text: HM-65642/883 TM 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell


    Original     		HM-65642/883 HM-65642/883 80C86 80C88 100kHz HM465642B DQ420 PDF

    HM1-65642/883

    Abstract: HM4-65642/883 80C86 80C88
    Text: HM-65642/883 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell


    Original     		HM-65642/883 MIL-STD883 150ns HM1-65642/883 HM4-65642/883 80C86 80C88 PDF

    dtc114ek

    Abstract: B 560 PNP TRANSISTOR Transistor circuits 2SA1037AK
    Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN/PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,


    Original     		SC-88, SC-74 SC-75A SC-70 SC-59 SC-59 SC-88A SC-75A, dtc114ek B 560 PNP TRANSISTOR Transistor circuits 2SA1037AK PDF

    T100

    Abstract: U6084B U6084B-FP VT100
    Text: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1


    Original     		U6084B T100 U6084B-FP VT100 PDF

    2027mA

    Abstract: 4677B
    Text: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1


    Original     		U6084B 4677B 2027mA PDF

    atmel 028

    Abstract: T100 U6084B U6084B-MFPG3Y VT100 820k switched potentiometer
    Text: Features • • • • • Pulse-width Modulation up to 2-kHz Clock Frequency Protection Against Short-circuit, Load-dump Overvoltage and Reverse VS Duty Cycle 0% to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and


    Original     		U6084B 4677C atmel 028 T100 U6084B-MFPG3Y VT100 820k switched potentiometer PDF

    HM1-65642/883

    Abstract: HM4-65642/883 80C86 80C88 HM65642C intersil eprom
    Text: HM-65642/883 8K x 8 Asynchronous CMOS Static RAM May 2002 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell


    Original     		HM-65642/883 MIL-STD883 150ns HM1-65642/883 HM4-65642/883 80C86 80C88 HM65642C intersil eprom PDF

    Untitled

    Abstract: No abstract text available
    Text: S h K S S « HM-65262/883 16K x 1 Asynchronous CM O S Static RAM August 1996 Features • Description T h is Circuit is P ro cessed in A cco rd a n ce to MIL-STD883 and is Fully Conform ant Under the P rovision s of Paragraph 1.2.1. • Fast A c c e s s T im e . 70/85nsMax


    OCR Scan     		HM-65262/883 MIL-STD883 70/85nsMax 4302B71 00tifi3ti4 PDF

    TTL TRANSISTOR MODEL PARAMETER

    Abstract: No abstract text available
    Text: FEATURES • 9 - 1 0 MHz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 38 J fcË f MODEL NO. CHD01940


    OCR Scan     		CHD01940 15VDCSUPW TTL TRANSISTOR MODEL PARAMETER PDF

    r2c transistor

    Abstract: 20190
    Text: ERICSSON ^ PTB 20190 175 Watts, 470-806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, com mon em itter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically


    OCR Scan     		G-200, r2c transistor 20190 PDF

    sxxxx

    Abstract: No abstract text available
    Text: æ H A « « H M - 6 5 2 2 /8 8 3 16K x 1 Asynchronous CMOS Static RAM January 1992 Features • 6 Pinouts This Circuit Is Processed In Accordance to Mtl-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HM1-65262/883 CERAMIC DIP


    OCR Scan     		HM1-65262/883 Mtl-Std-883 7CV85nsMax HM-65262/883 MIL-M38510 MIL-STD-1835, GDIP1-T20 L-M38510 sxxxx PDF

    TRANSISTOR BC 136

    Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
    Text: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


    OCR Scan     		T-33-17 DIN125A 15A3DIN TRANSISTOR BC 136 transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711 PDF

    bly89a

    Abstract: Transistor bly89a
    Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


    OCR Scan     		Q01414fl BLY89A 7Z675I bly89a Transistor bly89a PDF

    M2SK1544

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1544 TOSHIBA FIELD EFFECT TRANSISTOR M T SILICON N CHANNEL MOS TYPE tt-MOSIII-5 • m. ■ v ■ ■ INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • U nit in mm


    OCR Scan     		2SK1544 M2SK1544 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it


    OCR Scan     		DTB143EK/DTB143EC/DTB143ES 143EK 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-65262/883 S 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran­


    OCR Scan     		HM-65262/883 MIL-STD883 HM-65262/883 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE 86D 01812 ObE D b b s a ' m oam osa a • BLX92A D r-3 3 - 4 5 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		BLX92A QQ14D5 PDF