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    TRANSISTOR F390 Search Results

    TRANSISTOR F390 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F390 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    f22e

    Abstract: Scans-0010547 din 867 BFT12 Q62702
    Text: B FT12 l\IPI\l-Silizium-HF-Planar-Transistor B F T 1 2 is t ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Kunststoffgehäuse 50 B3 DIN 41 867 äh n l.T O -50 für allgemeine Verwendung in Verstärkern bis in den GHz-Bereich, z .B . für Breitbandantennenverstärker hoher Ausgangsleistung und Linearität sowie für Os­


    OCR Scan     		PDF BFT12 Q62702â 140mA f22e Scans-0010547 din 867 BFT12 Q62702

    b72 zener

    Abstract: Transistor DF- Rt M115 diode Lz 5n zener DI400MIM-050 MSX50 C 125t Zener diode
    Text: 1DI400MN-050 400A e±,(„ 5l-, '•Outline Drawings '< * 7 - h POWER TRANSISTOR MODULE ■ fë JI : Features • hFEÄ'^l' • • High DC Current Gain KrtflK ■ fflji! : Applications • >'< —9 General Purpose Inverter • Uninterruptible Power Supply


    OCR Scan     		PDF DI400MIM-050 25-35kfi-cm E82988 b72 zener Transistor DF- Rt M115 diode Lz 5n zener MSX50 C 125t Zener diode

    transistor BFT 95

    Abstract: 150a gto 2DI75M-050 T151 T760 trs in cms equivalent transistor cms
    Text: 2DI75M-050 75A '\ 9 — ' Ë ± ' < r7 — ;u I Outline Drawings POWER TRANSISTOR MODULE • 95:11: I Features • jtSfljhiFE High DC Current Gain • High Speed Switching Applications 9 General Purpose • Inverter ninterruptible Power Supply • NCIf!M8M£


    OCR Scan     		PDF 2DI75M-050 l95t/R89 transistor BFT 95 150a gto T151 T760 trs in cms equivalent transistor cms

    60JG

    Abstract: No abstract text available
    Text: 2DI75M-050 75A ' \9 — ' Ë ± ' < r7 — ;u I Outline Drawings POWER TRANSISTOR MODULE • 95:11: I Features • jtSfljhiFE High DC Current Gain • High Speed Switching Applications 9 General Purpose Inverter • ninterruptible Power Supply • NCIf!M8M£


    OCR Scan     		PDF 2DI75M-050 l95t/R89 60JG

    pj969

    Abstract: PJ 96
    Text: 6D I30M -120 3 oa y<ry- i> 7, ? =L ~ : Outline Drawings POWER TRANSISTOR MODULE : Features 7.5 21 , 2B.5 19 • High Arm Short Circuit Capability • hFEA^&i,' High DC Current Gain •7' J ' J FfajBL Including Freewheeling Diode • Ifei¥klte Insulated Type


    OCR Scan     		PDF I95t/R89 Shl50 pj969 PJ 96

    b72 zener

    Abstract: ZENER MIO N41I 30S3 M115 T151
    Text: 1DI400MN-050 400A e±,(„ 5l-, '•Outline Drawings POWER TRANSISTOR MODULE ■ S J I : Features • hFE^'^V' High DC Current Gain • K rtJ •zm nm m t \ : Applications >'<— 9 • d General Purpose Inverter • Uninterruptible Power Supply • N C If P i& M


    OCR Scan     		PDF DI400MIM-050 E82988 l95t/R89 Shl50 b72 zener ZENER MIO N41I 30S3 M115 T151

    transistor f390

    Abstract: No abstract text available
    Text: 1DI2OOE-O55 200a POWER TRANSISTOR MODULE : Features • R if t S • High Voltage 7'J— Kl*3/ • A S O A 'IS i' •mmm Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • 5 I & • Applications • Chopper Controls •DC^—


    OCR Scan     		PDF 1DI2OOE-O55 transistor f390

    Power INVERTER schematic circuit

    Abstract: 2DI150M-050 T151 ED35 fuji 2di T46o
    Text: 2D I 150M-050 15 oa IW K ’+ j i : Outline Drawings POWER TRANSISTOR MODULE Features • S h FE High DC Current Gain • High Speed Switching : Applications • General Purpose Inverter • fafaWWiM&cfB. • N C lfE ffifctt • □ tfy h Uninterruptible Power Supply


    OCR Scan     		PDF 150M-050 E82988 11S193- I95t/R89) Shl50 Power INVERTER schematic circuit 2DI150M-050 T151 ED35 fuji 2di T46o

    e5kk

    Abstract: No abstract text available
    Text: 2DI3OZ-1OO 30a : O utline Draw ings POWER TRANSISTOR MODULE F e a tu re s • «¡W/± High Voltage • 7 U— ') > * f f • i ' t — Krt/Si Including Free Wheeling Diode • ASO A'"/a V-' Excellent Safe Operating Area • M i WM Insulated Type LAMPNo 10


    OCR Scan     		PDF E82988 dl-1231 e5kk

    2DI75D-050A

    Abstract: DIODE B93 B-93 H125 M208 gip transistor b93 diode YSTT
    Text: 2DI75D-050A 75a /<7- -)V POWER TRANSISTOR MODULE i F e a tu re s • 7 'J — • h F E ^ ftt' •m m X — KF*3W Including Free Wheeling Diode High DC Current Gain Insulated Type If f liÉ : A p p lic a t io n s • High Power Switching • AC i AC Motor Controls


    OCR Scan     		PDF 2DI75D-050A E82988 DIODE B93 B-93 H125 M208 gip transistor b93 diode YSTT

    1D500A-030

    Abstract: 1D500A030 AJ/transistor AJ 16 1D500A030 equivalent
    Text: 1 D 5 O O A - O 3 O / \ 7 — 5 0 0 a —;u /< 7 - fflffc " 't > £ ! Outline Drawings POWER TRANSISTOR MODULE : F e a tu re s • High Current • hFE*v'^ i v High DC Current Gain • im m m Non Insulated Type ‘ Applications >9 • B Uninterrupti ble Power Supply


    OCR Scan     		PDF 1D500A-030 1D500A-030 1D500A030 AJ/transistor AJ 16 1D500A030 equivalent

    2SD923

    Abstract: 30S3 SC-65 T151 T930
    Text: 2SD923 Ë ± ' < r7 - h 7 > i > X ? TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH ¡3 TRANSISTOR UBT INDUSTRIAL USE POWER SUPPLY : O utline D ra w in g s * Features • Ultra high/? • hFE<7)U—T ' Î T ' l i ? E x c e l l e n t linearity in hFE • A S O ^ JÎl'


    OCR Scan     		PDF 2SD923 EaT05 19S24% I95t/R89) 2SD923 30S3 SC-65 T151 T930

    6DI100A-050

    Abstract: AAJK
    Text: 6DI100A-050 iooa /\°7H ’ Outline D raw ings POWER TRANSISTOR MODULE 1 Features • 7 ÿ — >; y • h F E * '" i^ ix • i — Kl*9/8t H igh D C In clu d in g Free W h e e lin g D iode C urrent Gain Insulated Type • ffliÊ : Applications • AC ie — 9


    OCR Scan     		PDF 6DI100A-050 E82988 AAJK

    Untitled

    Abstract: No abstract text available
    Text: 1DI400MN-050 400A e±,(„ 5l-, '• Outline Drawings POWER TRANSISTOR MODULE ■ S J I : Features • h F E ^'^V ' High DC C urre n t Gain • KrtJ •z m n m m t \ : A pplications >'< — 9 • d General Purpose Inverter • U n in te rru p tib le P ow er S u pp ly


    OCR Scan     		PDF 1DI400MN-050

    JCS7

    Abstract: No abstract text available
    Text: 1 D I 2 4 A - l- 5 240A ) 5 u : Outline Drawings POWER TRANSISTOR MODULE • ¡K H t: : F e a tu re s • ÜSHŒ H ig h V oltage • 7 U — sfc-f 'J :+ — K r t H • ASO In c lu d in g Free W h e e lin g 'D io d e E xcellent Safe O p e ra tin g Area


    OCR Scan     		PDF A88-7681 JCS7

    nsi 60 jg

    Abstract: VCBo-400V transiter CD 100 M6WA
    Text: ETI\I35-O3O 300a • : Outline D rawings POWER TRANSISTOR MODULE ’ F e a tu re s H igh C u rre n t • h F E ^ ^ v ,^ H igh DC C u rre n t Gain • Non Insulated T yp e 83 -iVVr'4 ‘ Applications • " jT - 's 'f H igh Pow er S w itc h in g U n in te rru p tib le Pow er S u p p ly


    OCR Scan     		PDF ETN35-O3O nsi 60 jg VCBo-400V transiter CD 100 M6WA

    1736d

    Abstract: No abstract text available
    Text: 6DI75M-050 75A 'U ± '< h - y < 7 _ Y = 7 > '> ^ ^ ì>d. - ì V l £ f ' :£ ï > d , - ) v O utline Draw ings POWER TRANSISTOR MODULE F e a tu r e s • f f ih FE H igh DC C u rre n t Gain • H ig h S peed S w itc h in g : A p p lic a tio n s • ? G eneral P urpose Inverter


    OCR Scan     		PDF 6DI75M-050 e9Ti30S3 1736d

    500 DKZ

    Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
    Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt


    OCR Scan     		PDF 150/160-MHz-Band 500 DKZ TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren

    mrf502 gold transistor

    Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 mrf502 gold transistor Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911

    BI 344 TRANSISTOR

    Abstract: transistor 3Ft B341
    Text: 1 D I 3 M P - 1 2 3 A ï ± , , _ . ^ : Outline Drawings POW ER T R A N SIST O R M ODULE •¡HJi: : Features • hFE * ''« l' High DC Current Gain • « » ¡» ■ ftB E n rfll 2M0 : Applications "TI • i/L ffi'f w < — 9 General Purpose Inverter


    OCR Scan     		PDF E82988 130S3-t 95t/R89 Shl50 BI 344 TRANSISTOR transistor 3Ft B341

    PC3000

    Abstract: 20-HIM 1DI400MN-120 M118 B362 tzis
    Text: 1 D I4 0 0 M IM -1 2 0 4 0 0 A : Outline Drawings V s7 > i > X f sE i > 3 . - ) U POW ER T R A N S IS T O R M ODULE 1ï “ rA •ifêHi: : Features • hFE*'”i ^ High DC Current Gain • ( * - K rt M : Applications • General Purpose Inverter ? •


    OCR Scan     		PDF 1DI400MN-120 E82988 -t810 I95t/R89) PC3000 20-HIM M118 B362 tzis

    MRF536

    Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 MRF536 MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237

    2N3866 MOTOROLA s parameters

    Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 2N3866 MOTOROLA s parameters 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD

    151S5

    Abstract: transistor f390 POWER TRANSISTER
    Text: 2 D I5 0 M - 0 5 0 5 o a /<7 : Outline Drawings POWER TRANSISTER MODULE : Features • # hFE High DC Current Gain • High Speed Switching • fflife : A p p lica tio n s 9 General Purpose Inverter Uninterruptible Power Supply • N C lfiD lfc fi • nsji-yh


    OCR Scan     		PDF E82988 151S5 transistor f390 POWER TRANSISTER