BF689
Abstract: BF689K transistor zs 35
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF689K NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54
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BF689K
MSB034
BF689
BF689K
transistor zs 35
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Untitled
Abstract: No abstract text available
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN1907FS
RN1909FS
RN1907FS,
RN1908FS,
RN2907FS
RN2909FS
RN1908Fesented
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RN1908FS
Abstract: RN1907FS RN1909FS RN2907FS RN2909FS f7 transistor transistor -25 f7
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN1907FS
RN1909FS
RN1907FS,
RN1908FS,
RN1908FS
RN1907FS
RN1908FS
RN1909FS
RN2907FS
RN2909FS
f7 transistor
transistor -25 f7
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CBVK741B019
Abstract: F63TNR F852 FDT439N PN2222A 63a30
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
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FDT439N
CBVK741B019
F63TNR
F852
FDT439N
PN2222A
63a30
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F852 transistor
Abstract: No abstract text available
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
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FDT439N
F852 transistor
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LDTD123YLT1G
Abstract: f62 current transistor marking F62 f62 transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD123YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTD123YLT1G
OT-23
LDTD123YLT1G
f62 current transistor
marking F62
f62 transistor
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CBVK741B019
Abstract: F63TNR FDD603AL FDD6680
Text: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This
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FDD603AL
CBVK741B019
F63TNR
FDD603AL
FDD6680
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RN1907FS
Abstract: RN1908FS RN1909FS RN2907FS RN2909FS
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN1907FS
RN1909FS
RN1907FS,
RN1908FS,
RN1908FS
RN1907FS
RN2907FS
RN2909FS
RN1908FS
RN1909FS
RN2909FS
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Untitled
Abstract: No abstract text available
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS,RN1908FS,RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enable the manufacture of ever more
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RN1907FS
RN1909FS
RN1908FS
RN1908FS
RN1907FS
RN2907FS
RN2909FS
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Untitled
Abstract: No abstract text available
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN1907FS
RN1909FS
RN1907FS,
RN1908FS,
RN1908FS
RN1907FS
RN2907FS
RN2909FS
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BLF8G10LS-270V
Abstract: transistor full 2000 to 2012
Text: BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev. 1 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.
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BLF8G10LS-270V;
BLF8G10LS-270GV
BLF8G10LS-270V
8G10LS-270GV
transistor full 2000 to 2012
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Untitled
Abstract: No abstract text available
Text: 1 F6-8R12KF EUPEC SEE D Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum permissible values V 1200 •c ^ • 34032^7 0QDD2t.fi DS7 « U P E C m Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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F6-8R12KF
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Untitled
Abstract: No abstract text available
Text: 7= 39- 3 / F6-8R10K EUPEC SEE Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces •c D • 3M032T7 GDDDEb? 110 H U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p er module
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F6-8R10K
3M032T7
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8 A 123
Abstract: DIODE BZ F6-8R10K
Text: 7 = 3 9 -3 / F6-8R10K EUPEC SEE Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces •c D • 3M032T7 GDDDEb? 110 H U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p er module
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F6-8R10K
00002b7
15Vits
8 A 123
DIODE BZ
F6-8R10K
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2SG3053
Abstract: 2SC3053
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SG3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING „ „
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2SC3053
2SG3053
-100MH2
2SC3053
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: fl SIGNETICS INTEGRATED CIRCUITS 54H00 Series 74H00 Series The 54H00/74H00 logic family is high speed TTL III. These transistor-transistor logic circuits were designed for general purpose applications. They have good external noise immunity and high fan-out.
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54H00
74H00
54H00/74H00
C-14-LEAD
-16-LEAD
D-14-LEAD
54H00/C
2-In16-LEAD
16-LEAD
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise
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16-LEAD
10-LEAD
24-LEAD
12-LEAD
40-LEAD
20-LEAD
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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transistor zg
Abstract: F689K BF689 zg transistor
Text: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PIN DESCRIPTION
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BF689K
F689K
SB034
transistor zg
BF689
zg transistor
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cd 5411
Abstract: 54175 CD 5401 7400 Series 4-bit Bi-Directional Shift Register 7400 J-K Flip-Flop Signetics 54123
Text: Tft SIGNETICS INTEGRATED CIRCUITS 5400 Series 7400 Series The 5400/7400 series of transistor-transistor logic consists of medium speed TTL integrated circuits. This high noise immunity family was designed for general digital logic applications requiring clock frequencies to 30 MHz and
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14-LEAD
-24-LEAD
24-LEAD
16-LEAD
cd 5411
54175
CD 5401
7400 Series 4-bit Bi-Directional Shift Register
7400 J-K Flip-Flop
Signetics 54123
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BT816
Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
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mm/13"
O-92S)
BT816
TA114E
a768
transistor b722
B861
B718
equivalent transistor TT 3034
C785 transistor
b714 transistor
B728
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equivalent transistor TT 3034
Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages
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-335/H-135/D-40
-334/H-280/D-41
-334/H-280/D-41
-334/H-28Q/D-41
L-56SW-42/H-115
L-565/W-42/H-12
OT-23,
SC-59
equivalent transistor TT 3034
transistor TT 3034
D718 transistor
D718 equivalent
transistor a769
TT 3034 transistor
transistor d718
d718* transistor
k d718
D718
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