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    TRANSISTOR FALL TIME Search Results

    TRANSISTOR FALL TIME Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FALL TIME Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUS CIRCUIT

    Abstract: MJ13333 mj1333 pswt an222
    Text: 1165908 SwitchmodeTM series NPN silicon power transistor. The MJ13333 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated SWITCHMODE applications.


    Original     		PDF MJ13333 200ns O-204 SUS CIRCUIT mj1333 pswt an222

    MJE13007D

    Abstract: NPN Transistor 50A 400V 24 pin ic utc rc
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is


    Original     		PDF MJE13007D MJE13007D MJE13007DL-TA3-T MJE13007DG-TA3-T O-220 MJE13007DL-TA3-T O-220 QW-R203-042 NPN Transistor 50A 400V 24 pin ic utc rc

    MJ13330

    Abstract: MJ13333 1N4934 1N4937 MJ13331 MJE200 MJE210 mj13 MJ-13330
    Text: ON Semiconductort MJ13333 SWITCHMODEt Series NPN Silicon Power Transistor The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated SWITCHMODE applications


    Original     		PDF MJ13333 MJ13333 r14525 MJ13333/D MJ13330 1N4934 1N4937 MJ13331 MJE200 MJE210 mj13 MJ-13330

    MJE13003K

    Abstract: Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003K 290ns MJE13003KL-x-x-T60-K MJE13003KG-x-x-T60-K MJE13003KL-x-x-T6C-A-K MJE13003KG-x-x-Tues QW-R223-006 MJE13003K Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V

    NTE283

    Abstract: npn 10a 800v
    Text: NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include


    Original     		PDF NTE283 NTE283 npn 10a 800v

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 MJE13007 MJE13007L-TA3-T MJE13007G-TA3-T MJE13007L-TF3-T MJE13007G-TF3-T MJE13007L-TF1-T MJE13007G-TF1-T MJE13007L-TF2-T MJE13007G-TF2-T

    MJE13007-M

    Abstract: NPN Transistor 50A 400V 24 pin ic utc rc 400v 50A Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is


    Original     		PDF MJE13007-M MJE13007-M MJE13007L-M-TA3-T MJE13007G-M-TA3-T O-220 MJE13007L-M-TA3-T O-220 QW-R204-028 NPN Transistor 50A 400V 24 pin ic utc rc 400v 50A Transistor

    MJE13007G

    Abstract: rb28 MJE13007 utc mje13007l MJE13007L-TA3-T MJE13007-TA3-T MJE13007* transistor MJE130
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 MJE13007 MJE13007L MJE13007G MJE13007-TA3-T MJE13007-TF3-R MJE13007L-TA3-T MJE13007L-TF3-R MJE13007G-TA3-T MJE13007G-TF3-R MJE13007G rb28 utc mje13007l MJE13007L-TA3-T MJE13007-TA3-T MJE13007* transistor MJE130

    MJE13007G

    Abstract: MJE13007 utc mje13007l MJE13007-TA3-T MJE13007L-TA3-T MJE13007* transistor TRANSISTOR BIPOLAR 400V 20A silicon transistor Vcbo 800 Vceo 1000 Ic 20A NPN Transistor 50A 400V 700 v power transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 MJE13007 MJE13007L MJE13007G MJE13007-TA3-T MJE13007-TF3- MJE13007L-TA3-T MJE13007L-TF3- MJE13007G-TA3-T MJE13007G-TF3- MJE13007G utc mje13007l MJE13007-TA3-T MJE13007L-TA3-T MJE13007* transistor TRANSISTOR BIPOLAR 400V 20A silicon transistor Vcbo 800 Vceo 1000 Ic 20A NPN Transistor 50A 400V 700 v power transistor

    MJE13007

    Abstract: mje13007 TRANSISTOR transistor MJE13007
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 MJE13007 MJE13007L-TA3-T MJE13007G-TA3-T MJE13007L-TF3-T MJE13007G-TF3-T O-220 O-220F MJE13007L-TA3-T O-220, mje13007 TRANSISTOR transistor MJE13007

    pswt

    Abstract: MJE13003 TO-92 NPN Transistor 1.5A 700V
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-T60-K MJE13003G-x-T60-K MJE13003L-x-T6C-A-K MJE13003Gues QW-R204-004 pswt MJE13003 TO-92 NPN Transistor 1.5A 700V

    NTE51

    Abstract: 75W NPN TO220
    Text: NTE51 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE51 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited


    Original     		PDF NTE51 NTE51 75W NPN TO220

    MJE13003

    Abstract: MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns QW-R204-004 MJE13003 MJE13003 TO-92

    222A

    Abstract: 1N4937 MJ10023 mj1002
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10023 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchmode


    Original     		PDF MJ10023 r14525 MJ10023/D 222A 1N4937 mj1002

    NTE379

    Abstract: NTE379 equivalent
    Text: NTE379 Silicon NPN Transistor Power Amp, High Voltage, Switch Description: The NTE379 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited


    Original     		PDF NTE379 NTE379 NTE379 equivalent

    MJE13003 TO-92

    Abstract: MJE13003 transistor tr/MJE13006/MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns QW-R204-004 MJE13003 TO-92 MJE13003 transistor tr/MJE13006/MJE13003 TO-92

    transistor mje13003

    Abstract: mje13003 to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-T60-K MJE13003G-x-T60-K MJE13003L-x-T6C-A-K MJE13003Gues QW-R204-004 transistor mje13003 mje13003 to-92

    mje13003x

    Abstract: MJE13003 transistor MJE13003 pswt MJE13003 TO-92 MJE13003l
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-x-T60-K MJE13003G-x-x-T60-K O-126 MJE13003L-ues QW-R204-004 mje13003x MJE13003 transistor MJE13003 pswt MJE13003 TO-92 MJE13003l

    MJE13003

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-T60-K MJE13003G-at QW-R204-004 MJE13003

    transistor mje13003

    Abstract: MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-T60-K MJE13003G-x-T60-K MJE13003L-x-T6C-A-K MJE13003Gues QW-R204-004 transistor mje13003 MJE13003 TO-92

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-Q Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007-Q MJE13007-Q MJE13007L-Q-TA3-T MJE13007G-Q-TA3-T O-220 QW-R203-046

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-P Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007-P MJE13007-P MJE13007L-P-TA3-T MJE13007G-P-TA3-T O-220 QW-R203-047

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003-x-x-T60-K MJE13003-x-x-T6C-A-K MJE13003-x-x-T6C-F-K MJE13003-x-x-T92-B MJE13003-x-x-at QW-R204-004

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003-P 290ns MJE13003L-P-x-T60-K MJE13003G-P-x-T60-K MJE13003L-P-x-T6at QW-R204-027