TRANSISTOR FET Search Results

TRANSISTOR FET Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR FET Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list Text: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor	Original	PDF	X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45 MP-45F O-220 MP-80 MP-10 transistor POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
transistor Abstract: transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor Text: Road map Transistor Package Function / Application Bipolar Transistor Bipolar Transistor MOS FET Low VCE sat Transistor VDSS - ID(DC) (Small Signal MOS FET) High hFE Transistor 4VGate Driven Series Low Voltage, High Speed Switching Transistor 2.5VGate Driven Series	Original	PDF	X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45, MP-45F MP-25 MP-80 transistor transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor
2SA2160 Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series	Original	PDF	O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
advantage and disadvantage of igbt Abstract: HFBR1531Z HFBR-1522ETZ Text: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence	Original	PDF	AFBR-0546Z AFBR-0548Z HFBR-0543Z AV02-3407EN AFBR-1624Z/1629Z AFBR-2624Z/2529Z AV02-2699EN HFBR-0500ETZ IEC60664-1 AV02-3500EN advantage and disadvantage of igbt HFBR1531Z HFBR-1522ETZ
KIA78pI Abstract: transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	PDF	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78pI transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P
khb9D5N20P Abstract: khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	PDF	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb9D5N20P khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
UPA509TA Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509 Text: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor	Original	PDF	PA509TA SC-74A UPA509TA uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
2SK3266 Abstract: 2SC4639 FC22 Text: FC22 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp, AM Applications TENTATIVE Features • Composite type with an J-FET transistor and a PNP transistor contained in the conventional CP package, improving the	Original	PDF	2SC4639 2SK3266, 10IB1 --20V 990128TM2fXHD 2SK3266 FC22
high power FET transistor s-parameters Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .	Original	PDF	ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
high frequency transistor ga as fet Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .	Original	PDF	ATP-1054, 5963-2025E 5966-0779E high frequency transistor ga as fet ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
TPCP8F01 Abstract: No abstract text available Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive	Original	PDF	TPCP8F01 TPCP8F01
TRANSISTOR SMD MARKING CODE QR Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11 Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium	Original	PDF	PMC85XP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE QR MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic	Original	PDF	DTA143EE 416/SC

6aa marking Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic	Original	PDF	DTA114YE 416/SC 6aa marking
power Junction FET advantages and disadvantages Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor	Original	PDF	ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
4 channel triac opto Abstract: transistor transistor AC Switch OPTO- DARLINGTON dual channel opto triac ac opto triac Photo Relays DIP SWITCH 10 PIN photo transistor zero voltage AC 8 PIN Text: Contents INDEX OPTO ISOLATORS Photo Transistor 4 & 6 pin DIP FET Couplers High Collector / Emitter Voltage 8 pin SOIC Photo Transistor In Line Packages (4,8,16 pin DIP) Dual Channel Photo Transistor Quad Channel Photo Transistor 4 Photo Transistor Detector	OCR Scan	PDF
TRANSISTOR LD25 Abstract: No abstract text available Text: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope	OCR Scan	PDF	BUK581-100A OT223 BUK581 -100A TRANSISTOR LD25
BUK566-60A Abstract: No abstract text available Text: Product specification Philips Semiconductors PowerMOS transistor BUK566-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope	OCR Scan	PDF	BUK566-60A OT404 BUK566-60A
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope	OCR Scan	PDF	BUK581-100A OT223 BUK581-100A OT223.
Untitled Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transistor BUK582-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope	OCR Scan	PDF	BUK582-100A OT223 BUK582-100A OT223.
Untitled Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope	OCR Scan	PDF	BUK581-100A OT223 BUK581 -100A OT223.
BUK565-100A Abstract: No abstract text available Text: Product specification Philips Semiconductors PowerMOS transistor BUK565-100A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a	OCR Scan	PDF	BUK565-100A OT404 BUK565-100A
BUK555-100A Abstract: transistor c 839 BUK555 transistor M 839 Text: Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.	OCR Scan	PDF	BUK555-100A/B BUK555 -100A -100B BUK555-100A/B BUK555-100A transistor c 839 BUK555 transistor M 839

TRANSISTOR FET Search Results

TRANSISTOR FET Result Highlights (5)

TRANSISTOR FET Datasheets Context Search

transistor

transistor

2SA2160

MN1280

advantage and disadvantage of igbt

KIA78*pI

khb*9D5N20P

UPA509TA

2SK3266

high power FET transistor s-parameters

high frequency transistor ga as fet

TPCP8F01

TRANSISTOR SMD MARKING CODE QR

Untitled

6aa marking

power Junction FET advantages and disadvantages

4 channel triac opto

TRANSISTOR LD25

BUK566-60A

Untitled

Untitled

Untitled

BUK565-100A

BUK555-100A