Untitled
Abstract: No abstract text available
Text: CD00001880 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 6733 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature
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CD00001880
SD57060-01,
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Abstract: No abstract text available
Text: Part Number: Integra IB0912M600 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing
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IB0912M600
IB0912M600
IB0912M600-REV-NC-DS-REV-A
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Abstract: No abstract text available
Text: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing
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IB0912M350
IB0912M350
IB0912M350-REV-NC-DS-REV-D
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB0912M500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing
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IB0912M500
IB0912M500
IB0912M500-REV-NC-DS-REV-B
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Abstract: No abstract text available
Text: Part Number: Integra IB0912M210 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M210 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing
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IB0912M210
IB0912M210
IB0912M210-REV-NC-DS-REV-NC
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Abstract: No abstract text available
Text: Part Number: Integra IB0912M70 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M70 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing
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IB0912M70
IB0912M70
IB0912M70-REV-NC-DS-REV-C
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB0912L30 TECHNOLOGIES, INC. Avionics Broadband 30W Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912L30 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under 450us-15%
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IB0912L30
IB0912L30
450us-15%
IB0912L30-REV-NC-DS-REV-A
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB0912L70 TECHNOLOGIES, INC. L-Band JTIDS 70W Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912L70 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under 444x 7us on,
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IB0912L70
IB0912L70
IB0912L70-REV-NC-DS-REV-B
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bd 142 transistor
Abstract: No abstract text available
Text: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of
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IB0912L200
IB0912L200
IB0912L200-REV-NC-DS-REV-C
bd 142 transistor
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nec 2532
Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain
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2SC5014
2SC5014)
2SC5014-T2
nec 2532
NEC JAPAN 282 110 01
NEC 282 185 01
816-102
2SC5014
2SC5014-T1
2SC5014-T2
NEC 2134 transistor
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1012S500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 MHz. While operating in class C mode under DME pulsing
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IB1012S500
IB1012S500
IB1012S500-REV-NC-DS-REV-NC
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high power transistor 6 GHz
Abstract: transistor package
Text: BIPOLARICS INC. Part Number BPT23B06-23 SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Flange FEATURES: • P = 6 W @ 2.3 GHz • High Gain out GPE = 8.0 dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 480 mA • High Reliability
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BPT23B06-23
BPT23B06-23
high power transistor 6 GHz
transistor package
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C200H-DA004
Abstract: CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224
Text: ORDERING GUIDE PRODUCT PERFORMANCE STANDARDS OMRON devices that comply with EC Directives also conform to the related EMC standards so that they can be more easily built into other devices or the overall machine. The actual products have been checked for conformity to
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C200H-DA003
C200H-OD217
C200H-MAD01
C200H-IDS01-V1
C200H-DA004
C200H-IDS21
CS1W-MAD44
CS1W-AD041
CS1W-AD081
CS1W-DA041
C200H-DA004
CS1W-MD292
TRANSISTOR GUIDE
DRT1-TS04P
OC224
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HAT1058C
Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,
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notic50
SON3024-8
HAT1062G
ADE-A08-003Q
HAT1058C
HAT2106G
HAT1068C
Hitachi MOSFET
HAT3016G
H5P0201MF
BB304M
FU 3024
wba sot23
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MRF860
Abstract: 2n2222 npn transistor 2N2222 rf
Text: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF860/D
2PHX33728Q-0
MRF860
2n2222 npn transistor
2N2222 rf
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transistor bd135
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON
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TP3032
TP3032
BD135
transistor bd135
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tp3026
Abstract: transistor ft 960
Text: 12E D I b3fc,?2S4 MOTOROLA SC QOflflESÖ XSTRS/R 3 | F t 1 33-11 MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3026 Advance Inform ation The RF Line UHF P o w e r T ran sisto r 25 W — 960 M Hz UHF POWER TRANSISTOR The TP3026 is specifically designed fo r operation as the final stage in 960 M Hz mobile
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TP3026
TP3026
transistor ft 960
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ic ca 747
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, com mon em itter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP
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TRANSISTOR JG 92
Abstract: IFR 730
Text: H * m iG TU&Q rni 1 40 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 4 9 5 - 3 RF & MICROWAVE TRANSISTORS 9Ö0-960MHZ CLASS C, BASE STATIONS • ■ ■ ■ . . ■ CLASS C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN EFFICIENCY
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0-960MHZ
960MHz
SD14S5-03
SD1495-3
900-960MH2
960MH*
33S/S
TRANSISTOR JG 92
IFR 730
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transistor ft 960
Abstract: IC 7108
Text: ERICSSO N 0 PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN. com mon em itter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP
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BF960
Abstract: t187 BF-960 BF960 TELEFUNKEN GDDS530 Telefunken u 237 BF 22 W transistor bf 237 BF 606 a0lv
Text: oc TELEFUNKEN ELECTRONIC V fllC D 6 1 2 0 0 % DDDS530 *i • ALG6 T~3i - Xjr~ ■ miSPMMEN electronic BF 960 Creative Technologies j i N-Channel Dual Gate MOS-Fieldeffect Tetrode >Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz
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GDDS530
569-GS
000S154
HAL66
BF960
t187
BF-960
BF960 TELEFUNKEN
Telefunken u 237
BF 22 W
transistor bf 237
BF 606
a0lv
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itt 2222
Abstract: tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors
Text: PhHip^emiconductor^^^ _ bbSBIBl 003G12b TD7 H AP X ^Pjoduc^pecjficatjon UHF power MOS transistor ^ BLF544 N AMER P H I L I P S / D I S C R E T E bTE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures
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003G12b
BLF544
OT171
MCA836
itt 2222
tag l9 transistor
2222 030 capacitor philips
ITT 2222 A
4312 020 36642
Philips 2222 capacitor
electrolytic capacitor 47
capacitor j63 c9
38478
philips ceramic capacitors
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TRANSISTOR LC80
Abstract: No abstract text available
Text: Wireless Power Transistor M a PH0810-60 60 Watts, 850-960 MHz Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -32dBc Typ 3rd IMD at 60 Watts PEP Common Emitter Configuration Internal Input Impedance Matching
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PH0810-60
-32dBc
Sb42205
TRANSISTOR LC80
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2SC959
Abstract: 2sc960 C959 2SA606 2SA607 transistor ft 960 2116 2SC999
Text: 2SA606, 607/2SC 959, 960 2SA606, 607/2SC959, 960 PNP/NPN x e 9 * > 7 y a v h 9 V '✓7.9 / P N P / N P N SILICON EP IT A X IA L TRANSISTOR f â H S iî l Î B f f l / A u d io Frequency Amplifier « « ./F E A T U R E S ♦ »»8 /PACKAGE DIMENSIONS lUmtmml
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2SA606,
2SA607
2SC959,
2SC960
607/2SC959,
2SA606
2SC960
2SCS09
2SC959
C959
transistor ft 960
2116
2SC999
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