D1485
Abstract: 2SA1720
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SA1720
2SA1720
O-220
D1485
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NEC 2sc4552
Abstract: 2SC4552
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4552
2SC4552
NEC 2sc4552
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D1316
Abstract: 2SA1744
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is
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2SA1744
2SA1744
D1316
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TCA 785
Abstract: transistor BUX 48 vu bux BUX41 sonde de temperature
Text: *BUX 41N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE îfc Preferred device D isp o sitif recom m andé High speed, high current, high power transistor Transistor de puissance rapide, fo r t courant Thermal fatigue inspection
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CB-19
TCA 785
transistor BUX 48
vu bux
BUX41
sonde de temperature
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2SC4351
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for
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2SC4351
2SC4351
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2SD2161
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and
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2SD2161
2SD2161
O-220
O-220)
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D1486
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and
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2SD2162
2SD2162
O-220
O-220)
D1486
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2SC4815
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SC4815
2SC4815
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TRANSISTOR BO 346
Abstract: BFX89 case BFX89 Power Transisitor 100V 2A Q62702-F296
Text: B FX89 NPN Transistor for antenna amplifiers B F X 89 is an epitaxial N P N silicon RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general applications and, for instance, for use in antenna and RF amplifiers up into the GHz
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BFX89
BFX89
Q62702-F296
TRANSISTOR BO 346
case BFX89
Power Transisitor 100V 2A
Q62702-F296
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3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
BFX55
Q60206-X55
fl235bOS
3004x
Transistor BFX 59
634 transistor
bfx 63
63310-A
BFX55
D-10
Q60206-X55
Transistor BFX 90
BFX 79
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2SA1847
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1847
2SA1847
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MP-25
Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.
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NP40N06CLC
NP40N06DLC
NP40N06ELC
175dgree
027QMAX.
1000pF
O-220AB
O-262AA
O-220SMD
MP-25
NP40N06ELC
TO-220SMD
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2SA1843
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1843
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2SC5343
Abstract: SUT495J kst60
Text: SUT495J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT495J Package Code FX SOT-363 Outline Dimensions unit : mm
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SUT495J
2SC5343
OT-363
OT-363
KST-6037-000
SUT495J
kst60
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NEC semiconductor
Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.
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2SD2217
2SD2217
C11531E)
NEC semiconductor
transistor PT 4500
C11531E
NEC C11531E
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EN5052
Abstract: FX802 SB20W03P 2SB1302 50522
Text: Ordering number:EN5052 FX802 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode Twin type • Cathode Common DC-DC Converter Features Package Dimensions · Complex type of a low saturation voltage, high speed switching and large current PNP transistor and
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EN5052
FX802
FX802
2SB1302
SB20W03P,
FX802]
EN5052
SB20W03P
50522
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3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
Q60206-X55
BFX55
23SbOS
150mA
3004x
SIEMENS B 58 451
GE 639 transistor
2114D
transistor bfx 73
STATIC RAM 2114
Q2114
tic 2116 M
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2SC4553
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a
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3356P
Abstract: MC3356P
Text: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ARRAY General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays SILICON M O NOLITHIC INTEGRATED C IRCUIT The MC3346 is designed for general purpose, low power applications for con
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MC3346
MC3346
3356P
MC3356P
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sb30-03p
Abstract: C51ST
Text: Ordering num ber: E N 5028 No.5028 SA% YOi // _ FX401 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter F eatures • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and
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FX401
FX401
2SB1121
SB30-03P,
300mA
750mm2X
sb30-03p
C51ST
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D1558
Abstract: 2SA1649 2SA1649-Z
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1649, 2SA1649-Z PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter
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2SA1649-Z
2SA1649
D1558
2SA1649-Z
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sb30-03p
Abstract: No abstract text available
Text: Ordering number:EN5028 FX401 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Features Package Dimensions • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and a fast recovery and low forward voltage Shottky barrier
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EN5028
FX401
FX401
2SB1121
SB3003P,
FX401]
sb30-03p
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EN5028
Abstract: FX401 2SB1121 sb30-03p
Text: Ordering number:EN5028 FX401 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Features Package Dimensions • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and a fast recovery and low forward voltage Shottky barrier
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EN5028
FX401
FX401
2SB1121
SB3003P,
FX401]
EN5028
sb30-03p
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EN5387
Abstract: FX901 PNP Transistor MOSFET
Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low
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EN5387
FX901
FX901]
EN5387
FX901
PNP Transistor MOSFET
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