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    TRANSISTOR G16 Search Results

    TRANSISTOR G16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR G16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    code marking NEC

    Abstract: date code marking NEC g1683
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2610 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA2610, which has a heat spreader, is P-channel MOS Field Effect Transistor designed for applications such as power switch of portable machine and so on.


    Original     		PDF PA2610 PA2610, PA2610T1C code marking NEC date code marking NEC g1683

    uPA2715

    Abstract: UPA2715GR M15022
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2715GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook


    Original     		PDF PA2715GR PA2715GR uPA2715 UPA2715GR M15022

    dc m13

    Abstract: PT22
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2718GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2718GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook


    Original     		PDF PA2718GR PA2718GR dc m13 PT22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2719GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook


    Original     		PDF PA2719GR PA2719GR

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2717GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2717GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook


    Original     		PDF PA2717GR PA2717GR

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2715GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook


    Original     		PDF PA2715GR PA2715GR

    g1630

    Abstract: SOP8 mos n PA2702GR UPA2702G
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2705GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2702GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5


    Original     		PDF PA2705GR PA2702GR g1630 SOP8 mos n UPA2702G

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2706TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter


    Original     		PDF PA2706TP PA2706TP,

    SOP8 mos n

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA2703GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2703GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power management 5 1, 2, 3


    Original     		PDF PA2703GR PA2703GR SOP8 mos n

    SOP8 mos n

    Abstract: nec 14-A
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2704GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2704GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.


    Original     		PDF PA2704GR PA2704GR SOP8 mos n nec 14-A

    upa650

    Abstract: marking WD
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 1.8 V drive available Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)


    Original     		PDF PA650TT PA650TT upa650 marking WD

    M140 diode

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2716GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2716GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.


    Original     		PDF PA2716GR PA2716GR M140 diode

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2706GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 1, 2, 3 ; Source 4 ; Gate


    Original     		PDF PA2706GR PA2706GR

    PA2717GR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2717GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2717GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.


    Original     		PDF PA2717GR PA2717GR

    PA2755GR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2755GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2755GR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.


    Original     		PDF PA2755GR PA2755GR

    XC6SLX16-CSG324

    Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
    Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller


    Original     		PDF DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA653TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 4.0 V drive available Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = −10 V, ID = −1.5 A)


    Original     		PDF PA653TT PA653TT

    PA2718GR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2718GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA2718GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.


    Original     		PDF PA2718GR PA2718GR

    D1207

    Abstract: 25A45
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA651TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 69 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)


    Original     		PDF PA651TT PA651TT D1207 25A45

    U6000

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


    Original     		PDF PA2452 PA2452 U6000

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2706TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The µ PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer.


    Original     		PDF PA2706TP PA2706TP, 30ems,

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1806 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1806 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and


    Original     		PDF PA1806 PA1806

    uPA677TB

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA677TB is a switching device which can be driven directly by a 2.5 V power source. The µPA677TB features a low on-state resistance and excellent


    Original     		PDF PA677TB PA677TB SC-70 uPA677TB

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1807 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1807 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and


    Original     		PDF PA1807 PA1807