MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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AN3025
Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
Text: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace
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AN3025
AN3025
transistor working principle
tinning
METCAL MX-500 circuit
free transistor
SN62
SN63
GC Electronics 108109
metcal
transistor free
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IGBT/MOSFET Gate Drive
Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it
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20-May-09
IGBT/MOSFET Gate Drive
IGBT PNP
power BJT anti saturation diode
Gate Drive Optocoupler
optocoupler drive relay
IGBT gate drive for a boost converter
IGBT gate driver ic
high side MOSFET driver optocoupler
IGBT cross
igbt dc to dc converter capacitor charging
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N2894AC1
-200mA
360mW
88mW/Â
2N2894AC1B
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2N2894AC1
Abstract: LE17 MIL-PRF19500 QR217 marking l3d sot23
Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N2894AC1
-200mA
360mW
2N2894AC1B
2N2894AC1
LE17
MIL-PRF19500
QR217
marking l3d sot23
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available
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2N4209C1A
2N4209C1B
-50mA
360mW
05mW/Â
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Untitled
Abstract: No abstract text available
Text: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current
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2SC5507
2SC5507
2SC5507-T2
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2SC2352
Abstract: z239
Text: NEC SILICON TRANSISTOR BfCTRON OEVKE 2SC2352 VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC2352 is an NPN silicon epitaxial transistor intended fo r use as a in millimeters inches V H F m ixer in a tun er o f a T V receiver.
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2SC2352
2SC2352
11-i--
z239
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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Lb53T31
0Dm03L.
BLX91A
D01404S
7Z68928
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BLW84
Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith
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bbS3S31
BLW84
59-j54
OT-123.
7Z77529
7Z77S30
BLW84
transistor tt 2222
C 829 transistor
TT 2222 npn
TT 2222
SOT123
C 828 Transistor
transistor L6
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K 3699 transistor
Abstract: BLY88A 3699 npn pscw
Text: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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GGmi32
BLY88A
K 3699 transistor
BLY88A
3699 npn
pscw
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration
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MJE802
MJE802
OT-32
GC73280
OT-32
O-126)
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Untitled
Abstract: No abstract text available
Text: BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED
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BUL128D-B
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Untitled
Abstract: No abstract text available
Text: BUL49D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS . ELECTRONIC TRANSFORMERS FOR
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BUL49D
BUL49D
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Untitled
Abstract: No abstract text available
Text: BUL49D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS . ELECTRONIC TRANSFORMERS FOR
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BUL49D
BUL49D
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2SC4548
Abstract: No abstract text available
Text: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity
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2SA1740
250mm2
2SA1740/2SC4548
-----12SA1740/2SC4548
250mm2XOi
2SC4548
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS
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BUL216
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mitsubishi vcb
Abstract: 2SC3443
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3443 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3443 is a silicon NPN epitaxial type transistor designed for small OUTLINE DRAWING Uni( type motor drive, power supply application.
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2SC3443
2SC3443
2SA1363.
500mW
SC-62
mitsubishi vcb
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Untitled
Abstract: No abstract text available
Text: BUL39D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS . ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS . SWITCH MODE POWER SUPPLIES
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BUL39D
BUL39D
O-220
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BUL310
Abstract: No abstract text available
Text: B U L 310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED
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Untitled
Abstract: No abstract text available
Text: BUL59 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS . ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS . SWITCH MODE POWER SUPPLIES
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BUL59
BUL59
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