ge-20 transistor
Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams
Text: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching
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IRGPH30MD2
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V
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IRGPH30MD2
10kHz)
O-247AC
C-478
IRGPH30MD2
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Untitled
Abstract: No abstract text available
Text: PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C High switching speed optimized for up to 25kHz with low VCE on Short Circuit Rating 10µs @ 125°C, V GE = 15V
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-95597A
IRG4IBC30KDPbF
25kHz
O-220
O-220AB
IRG4BC30KD
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IRGPH40MD2
Abstract: C479
Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V
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IRGPH40MD2
10kHz)
O-247AC
C-480
IRGPH40MD2
C479
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IRGPH40MD2
Abstract: 930 18a C479
Text: Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH40MD2
10kHz)
O-247AC
C-480
IRGPH40MD2
930 18a
C479
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IRGPH40MD2
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH40MD2
10kHz)
O-247AC
C-480
IRGPH40MD2
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IRG4BC30KD
Abstract: No abstract text available
Text: PD -95597 IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switching speed optimized for up to 25kHz with low VCE on Short Circuit Rating 10µs @ 125°C, V GE = 15V Generation 4 IGBT design provides tighter
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IRG4IBC30KDPbF
25kHz
O-220
IRG4BC30KD
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IRGPH30MD2
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH30MD2
10kHz)
O-247AC
C-478
IRGPH30MD2
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IRG4BC30KD
Abstract: No abstract text available
Text: PD -95597 IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switching speed optimized for up to 25kHz with low VCE on Short Circuit Rating 10µs @ 125°C, V GE = 15V Generation 4 IGBT design provides tighter
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IRG4IBC30KDPbF
25kHz
O-220
IRG4BC30KD
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C478
Abstract: igbt socket IRGPH30MD2 irgph30
Text: Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH30MD2
10kHz)
O-247AC
C-478
C478
igbt socket
IRGPH30MD2
irgph30
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IRG4BC30KD
Abstract: No abstract text available
Text: PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switching speed optimized for up to 25kHz with low VCE on Short Circuit Rating 10µs @ 125°C, V GE = 15V Generation 4 IGBT design provides tighter
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-95597A
IRG4IBC30KDPbF
25kHz
O-220
O-220AB
IRG4BC30KD
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IRGBC30KD2-S
Abstract: GC smd diode AN-994 SMD-220
Text: PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes
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IRGBC30KD2-S
applica480V
SMD-220
IRGBC30KD2-S
GC smd diode
AN-994
SMD-220
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1838t
Abstract: 1838 T D-10 IRGPH50MD2 C-483 C483 SE 135 N se 130 n
Text: Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH50MD2
10kHz)
O-247AC
C-488
1838t
1838 T
D-10
IRGPH50MD2
C-483
C483
SE 135 N
se 130 n
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BFX60
Abstract: Transistor BFX 90 bfx 63 Q60206-X60
Text: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge häuse elektrisch isoliert.
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BFX60
Q60206-X60
Transistor BFX 90
bfx 63
Q60206-X60
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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Untitled
Abstract: No abstract text available
Text: International [^Rectifier Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT VCes = 1200V • Short circuit rated -10ps @ 12 5 °C , V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH40MD2
-10ps
10kHz)
00A/ps
O-247AC
C-480
0G2Q27Q
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C943 transistor
Abstract: DI 944 c939 transistor transistor c939 transistor C938
Text: P D - 9.1081 International ^R ectifier IRGPC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 600V • Short circuit rated -1 Ops @ 12 5 °C , V GE= 15V • Switching-loss rating includes all "tail" losses
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IRGPC30KD2
O-247AC
C-944
C943 transistor
DI 944
c939 transistor
transistor c939
transistor C938
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Untitled
Abstract: No abstract text available
Text: International IM] Rectifier Preliminary Data Sheet PD - 9.1135 IRGBC40M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10jjs @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC40M-S
10jjs
10kHz)
SMD-220
C-348
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LA 7693
Abstract: ic CD 4047 7737 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain
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2SC5014
2SC5014-T1
2SC5014-T2
LA 7693
ic CD 4047
7737 transistor
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transistor c905
Abstract: igbt c905 IRGBC30KD2 C909 D-12 qe r 908
Text: International i«rJRectifier P D - 9.1107 IRGBC3ÖKD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features c VcES = 6 0 0 V • Short circuit rated -1 Ops @125°C, V GE = 15V • Swiiching-loss rating includes ail "tail" tosses
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IRGBC30KD2
C-911
TQ-220AB
C-912
transistor c905
igbt c905
C909
D-12
qe r 908
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VN66AK
Abstract: 99AK VN98AK VN66 VN35AK VN67AK VN99AK T0-205AD
Text: VN35AK Series G^MIF3°[MìS@ FUIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DM O S technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in
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VN66AK
VN98AK
VN35AK
VN67AK
VN99AK
VN66AK
99AK
VN98AK
VN66
VN35AK
VN99AK
T0-205AD
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MRF9331
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in low p ow er am plifiers to 1 GHz. Ideal for p a ge rs and other battery operated sy ste m s w here low pow er c o n su m p tio n is critical.
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Untitled
Abstract: No abstract text available
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST T he N E 9 44 series o f NPN silicon epitaxial b ipo lar transisto rs is intended fo r use in ge ne ral purpose U H F o scilla to r and m ixer applicatio ns. It is su ita b le fo r au tom otive keyless entry
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NE944
NE94430
2SC4184
NE94430-T2
NE94433-T1B
24-Hour
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3096E
Abstract: 3096ce 3096C rca CA3096 CA3096E RCA 3096AE CA3096E
Text: Arrays if! HARRIS S E M I C O N D U C T O R HARRIS RCA GE CA3096, CA3096A, CA3096C • IN T ER S IL M ay 1 9 9 0 N -P -N /P -N -P Transistor Array Five-Ind epend ent Transistors: Three n -p -n and Two p -n -p A pplications: ■ D ifferential A m plifiers ■ Lam p and Relay D rivers
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CA3096,
CA3096A,
CA3096C
3096E
3096C
3096H
3096E
3096ce
rca CA3096
CA3096E RCA
3096AE
CA3096E
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