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    TRANSISTOR H1A Search Results

    TRANSISTOR H1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR H1A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AUGR4045D

    Abstract: AUIRGR4045D transistor model h1a auirgr4045 marking code H1A
    Text: PD - 97637 AUIRGR4045D AUIRGU4045D AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


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    AUIRGR4045D AUIRGU4045D AUGR4045D transistor model h1a auirgr4045 marking code H1A PDF

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    Abstract: No abstract text available
    Text: PD - 97637 AUIRGR4045D AUIRGU4045D AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


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    AUIRGR4045D AUIRGU4045D PDF

    transistor model h1a

    Abstract: IRGS4045D irgs4045 JESD-47 lm 230 wf1 JESD47F
    Text: IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC  6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C C E G VCE on typ.  1.7V G D2-Pak IRGS4045DPbF E n-channel Applications • Appliance Motor Drive  Inverters


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    IRGS4045DPbF capabilityC-Q101-005 transistor model h1a IRGS4045D irgs4045 JESD-47 lm 230 wf1 JESD47F PDF

    intel 945 motherboard schematic diagram

    Abstract: intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2
    Text: ORDER NO. CPD0111006C1 Personal Computer CF-07 This is the Service Manual for the following areas. M …for U.S.A. Model Number Reference The following models are numbered in accordance with the types of CPU and HDD etc. featured by product. Model No. CF-071 Z 2 ZY3 4


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    CPD0111006C1 CF-07 CF-071 intel 945 motherboard schematic diagram intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2 PDF

    MN3101

    Abstract: 4007A J201A transistor a 501523 transistor j201 Transistor 4007A 0022J a7l transistor NJM4560 pins 1m50e1
    Text: R52 10K-7 2 C1 .047MD7 1 INPUT 1 R3 47K-7 Q1 J201 R5 47K-7 R9 27K-7 8 R8 27K-7 5 4 R2 10K-7 R1 1M-7 C44 .0015J 10K-7 R4 2 VBIAS VBIAS 1 U1A 7 U1B 6 3 C13 .10KD7 C5 .0022J 7 .22LLME1 R6 10K-7 NJM4560/SM 5 6 C41 U2A INV R3 OUT NJM4560/SM C7 470PMD1 MN3005 NE570


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    10K-7 047MD7 47K-7 27K-7 0015J 10KD7 MN3101 4007A J201A transistor a 501523 transistor j201 Transistor 4007A 0022J a7l transistor NJM4560 pins 1m50e1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKHI 21A R . Absolute Maximum Ratings Symbol Conditions R^954&5 R^9KK4&5 b9H1M?HB)( /9? ,H?BI '9B1@J( ?%&4O E5?H1 )&J5@B '9B1O 8D&J2: +H1?H1 ?(@L >H%%(51 +H1?H1 @'(%@J( >H%%(51 4@YO )0&1>2&5J K%([H(5>I G9BB(>19% (4&11(% '9B1@J( )(5)( @>%9) 12( E^_/ R@1( 9K %&)( @5$ K@BB 9K '9B1@J( )(>95$@%I


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    A91194 PDF

    transistor marking B5

    Abstract: No abstract text available
    Text: UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A UMG1N / U M H IN / UMH5N / FMG1A / IM H1A / IMH5A Transistors Digital Transistor Dual Digital Transistors for Inverter Driver UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A I •A bsolu te maximum ratings (Ta=25°C)


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    DTA124E 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c transistor marking B5 PDF

    transistor 6NC

    Abstract: CNX82S
    Text: 6 LEADED DEVICES continued Transistor Output with No Base Connection Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emltter, 5-Collector, 6-N.C. (Style 3) Current Transfer Ratio (CTR) % a\ Min Device MOC8101S.F MOC8102S,F MOC8103S,F MOC8104S,F MOC8111S,F CNX82S.F


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    MOC8101S MOC8102S MOC8103S MOC8104S MOC8111S CNX82S MOC8112S MOC8113S MOC8113 MOC3043S. transistor 6NC PDF

    B452

    Abstract: RRJ diode h11q
    Text: 2DI75Z-140 75a '• O u tlin e D ra w in g s POWER TRANSISTOR MODULE : Features • iSHJŒ High Voltage • 7 ')— f r 'l'J 's 'ÿ ÿ 'f J '— KF*3 • A S O A '7 2 ;v .' • Including Freewheeling Diode E xc e lle n t S a fe O p eratin g Area In su late d Type


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    2DI75Z-140 l9St/R89) B452 RRJ diode h11q PDF

    t1d6

    Abstract: PN3906 t1d6 transistor RXT3904 SST3904 UMT3904 SPEC-C37 r1a transistor 2N3904 MMST3904
    Text: Transistors I NPN General Purpose Transistor UM T3904/SST3904/M M S T3904/R XT3904/2N 3904 • F e a tu re s • E x te r n a l d im e n s io n s U n its : m m 1 ) B V ceo < 4 0 V (lc = 1 m A > 2 ) C o m p le m e n ts th e U M T 3 9 0 6 /S S T 3 9 0 6 /M M S T 3 9 0 6 /R X T 3 9 0 6 /P N 3906.


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    UMT3904/SST3904/MMST3904/RXT3904/2N3904 UMT3906/SST3906/MMST3906/RXT3906/PN3906 UMT3904 SST3904 V1MST3904 RXT3904 2N3904 t1d6 PN3906 t1d6 transistor SPEC-C37 r1a transistor 2N3904 MMST3904 PDF

    transistor h1a

    Abstract: No abstract text available
    Text: UMH1N/IMH1A h 7 > y 7 $ / T ransistors UMH1N m • ■ ■ ■ -M h IM H1A Isolated Mini-Mold Device •f >/i— $ /^/Inverter Driver • il-fl^ jilS I/D im e n s io n s Unit : mm ■«a 1) UMT (SC-70), SMT (SC-59) tm~ 2 i B O x v i f JU h 7 > ÿ X Î ¡ P À o T t '« , ,


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    SC-70) SC-59) transistor h1a PDF

    Untitled

    Abstract: No abstract text available
    Text: TCD5120AC GENERAL TCD5120AC is a frame interline CCD area image sensor developed for a 3-CCD color camera NTSC TV system . This device has signal pixels of 772 (horizontal) x 492 (vertical), and its image size agrees with 2/3 inch type optical system. This device offers high sensitivity and resolution, low


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    TCD5120AC TCD5120AC 002135T -TCD5120AC D0213bQ PDF

    s52 photo

    Abstract: C500 TC6335AF TCD5700D
    Text: TOSHIBA TCD5700D TOSHIBA CCD AREA IMAGE SENSOR CCD Charge Coupled Device TCD5700D 2 /3 INCH 640k IT CCD (ED T V -II) TCD5700D is a frame interline CCD area image sensor developed for a 3-CCD wide aspect color camera (EDTVII system). This device has signal pixels of 1216 (horizontal) x 492


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    TCD5700D TCD5700D s52 photo C500 TC6335AF PDF

    Untitled

    Abstract: No abstract text available
    Text: TCD5130AC GENERAL TCD5130AC is a fram e interline CCD area image sensor developed fo r a 3-CCD color camera PAL/SECA M TV system . This device has signal pixels of 754 (horizontal) x 583 (vertical), and its image size agrees w ith 2 / 3 inch type optical system.


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    TCD5130AC TCD5130AC PDF

    UPS TOSHIBA

    Abstract: C500 TC6134AF TCD5340C 3ccd asi3
    Text: INTEGRATED TOSHIBA TOSHIBA CCD AREA IMAGE SENSOR CIRCUIT TECHNICAL TCD5340C DATA CCD Charge Coupled Device GENERAL TCD5340C is a frame interline CCD area image sensor developed for a 3-CCD color camera (NTSC TV system). This device has signal pixels of 1163 (horizontal) x 492


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    TCD5340C TCD5340C UPS TOSHIBA C500 TC6134AF 3ccd asi3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TCD5580C TO SH IBA CCD A R EA IMAGE SENSOR CCD Charge Coupled Device TCD5580C 2/3 INCH 640k FIT CCD (EIA) TCD5580C is a fram e interline CCD area im age sensor developed for a 3-CCD color camera (NTSC TV system). This device has signal pixels of 1216 (horizontal) x 492


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    TCD5580C TCD5580C PDF

    transistor 110 3CG

    Abstract: 110 3CG Transistor Data chart
    Text: INTEGRATED TOSHIBA TOSHIBA CCD AREA IMAGE SENSOR CIRCUIT TECHNICAL TCD5130AC DATA CCD{Charge Coupled Device GENERAL TCD5130AC is a frame interline CCD area image sensor developed for a 3-CCD color camera PAL/SECAM TV system). This device has signal pixels of 754 (horizontal) x 583


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    TCD5130AC TCD5130AC transistor 110 3CG 110 3CG Transistor Data chart PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TCD5580C TOSHIBA CCD AREA IMAGE SENSOR CCD Charge Coupled Device TCD5580C 2/3 INCH 640k FIT CCD (EIA) TCD5580C is a frame interline CCD area image sensor developed for a 3-CCD color camera (NTSC TV system). This device has signal pixels of 1216 (horizontal) x 492


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    TCD5580C TCD5580C PDF

    ad 152 transistor

    Abstract: transistor ad 162 Toshiba TCD5481AD CCD Image Sensor toshiba ccd ad 162 transistor T3 V2F toshiba image sensor C500 TCD5481AD TCD5481AD Toshiba CCD Image Sensor
    Text: T O S H IB A TCD5481AD TCD5481AD TOSHIBA CCD AREA IMAGE SENSOR CCD Charge Coupled Device GENERAL The TCD5481AD is an interline CCD area image sensor developed for a NTSC system Color television camera. This device has signal pixels of 858 (horizontal) x 614


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    TCD5481 TCD5481AD ad 152 transistor transistor ad 162 Toshiba TCD5481AD CCD Image Sensor toshiba ccd ad 162 transistor T3 V2F toshiba image sensor C500 TCD5481AD TCD5481AD Toshiba CCD Image Sensor PDF

    transistor fn 155

    Abstract: ay- 8500 system transistor H1A s3 tech
    Text: INTEGRATED TO SH IB A TO SH IBA CCD A R EA IMAGE SENSOR CIRCUIT TECH N ICAL TCD5340C D ATA CCD Charge Coupied Device GENERAL TCD5340C is a frame interline CCD area image sensor developed for a 3-CCD color camera (NTSC TV system). This device has signal pixels of 1163 (h o rizo n ta l)x 492


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    TCD5340C TCD5340C TCD534QC transistor fn 155 ay- 8500 system transistor H1A s3 tech PDF

    s53 photo

    Abstract: C500 TC6335AF TCD5710D toshiba ccd
    Text: TOSHIBA TCD5710D TOSHIBA CCD AREA IMAGE SENSOR CCD Charge Coupled Device TCD571OD 2 / 3 INCH 740k IT CCD (PAL-PLUS) TCD5710D is a frame interline CCD area image sensor developed for a 3-CCD wide aspect color camera (PALPLUS system). This device has signal pixels of 1186 (horizontal) x 583


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    TCD5710D TCD571OD TCD5710D s53 photo C500 TC6335AF toshiba ccd PDF

    c5v3

    Abstract: No abstract text available
    Text: TCD5481 AD TOSHIBA TOSHIBA CCD AREA IMAGE SENSOR CCD Charge Coupled Device TCD5481AD GENERAL The TCD5481AD is an interline CCD area image sensor developed for a IMT$C SyStciTi Color tclcViSiOD Cafficra. This device has signal pixels of 858 (horizontal) x 614


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    TCD5481 TCD5481AD TCD5481AD c5v3 PDF

    LAT03B7B

    Abstract: LA394B5CB JE3055 LA394B2CB LAIC3B2B HP3-T0127-CB insultek 445 TBA810 semi catalog LA394B2B
    Text: WE STOP HEAT COLD MEOT SINK/DISSIPATOR PRODUCTS AND THERMAL MANAGEMENT GUIDE 5672 M cAdam Road Mississauga, O ntario L4Z 1T2 Telephone 416 890-0221 Fax (416) 890-1628 UliHWT I UfUUfW-Mi fr z r r r T ] , INTERNATIONAL ELECTRONIC RESEARCH CORPORATION The most comprehensive line


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MA79M08QB 3-Terminal Negative Voltage Regulator FA IR C HILD A Schlumberger Company MIL-STD-883 July 1986— Rev 25 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 3-Lead TO-39 Can Top View The /JA79M08QB 3-Terminal Medium Current Negative


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    MA79M08QB MIL-STD-883 /JA79M08QB 79M08QB PDF