Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Power Management dual transistors LUMF23NDW1T1G S-LUMF23NDW1T1G zApplication Power management circuit 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product
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LUMF23NDW1T1G
S-LUMF23NDW1T1G
AEC-Q101
SC-88
LUMF23NDW1T3G
S-LUMF23NDW1T3G
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LUMF23NDW1T3G
Abstract: transistors marking HJ mh 7489 789 marking
Text: LESHAN RADIO COMPANY, LTD. Power Management dual transistors zApplication Power management circuit LUMF23NDW1T1G 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product
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LUMF23NDW1T1G
SC-88
3000/Tape
LUMF23NDW1T3G
10000/Tape
LUMF23NDW1T3G
transistors marking HJ
mh 7489
789 marking
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TRANSISTOR IFW
Abstract: intel g31 chipset motherboard ba21 transistor Intel BGA bpm signal processor intel g41 intel Penryn transistor BD28 transistor Bb26 ba17 diode
Text: Intel Celeron® Processor 900 Series and Ultra Low Voltage 700 Series Datasheet For platforms based on Mobile Intel® 4 Series Chipset family February 2010 Document Number: 320389-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
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Intel BGA
Abstract: intel g31 chipset motherboard
Text: Intel Celeron® Processor Ultra Low Voltage 700 Series Datasheet For platforms based on Mobile Intel® GS45 Express Chipset August 2008 Document Number: 320389-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
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DARLINGTON TRANSISTOR ARRAY
Abstract: No abstract text available
Text: EVERLIGHT. THE SOURCE OF LIGHT. EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable partner for many of the world’s leading electronics companies,
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6 Pin LED PIRANHA
Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
Text: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable
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D-85737
SE-573
6 Pin LED PIRANHA
everlight 50-215
smd transistor 2T
EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM
PLR262
19-237A/R6GHBHC-B01/2T
IRM-3638M-X
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eq7 instruction manual
Abstract: submersible motor winding formula
Text: Preface The EQ7 product is designed to drive a three-phase induction motor. Read through this instruction manual to become familiar with proper handling and correct use. Improper handling might result in incorrect operation, shorter life cycle, or failure of this product as well as the motor.
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Untitled
Abstract: No abstract text available
Text: PTFC262157FH advance specification Confidential, Limited Internal Distribution Description advance specification Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Advance Specification Data Sheets describe products that are being considered by Infineon
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PTFC262157FH
PTFC262157FH
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transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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T9550
Abstract: intel p8400 p8600 P9700 diode AH44 320-122 T9900 X9100 CXE DIODE micro switch lie n41
Text: Intel Core 2 Duo Mobile Processor, Intel® Core™2 Solo Mobile Processor and Intel® Core™2 Extreme Mobile Processor on 45-nm Process Datasheet For platforms based on Mobile Intel® 4 Series Express Chipset Family March 2009 Document Number: 320120-004
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45-nm
T9550
intel p8400
p8600
P9700
diode AH44
320-122
T9900
X9100
CXE DIODE
micro switch lie n41
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transistor BC33
Abstract: No abstract text available
Text: Intel Core 2 Duo Mobile Processor, Intel® Core™2 Solo Mobile Processor and Intel® Core™2 Extreme Mobile Processor on 45-nm Process Datasheet For platforms based on Mobile Intel® 4 Series Express Chipset Family August 2008 Document Number: 320120-002
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45-nm
transistor BC33
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PSW31B
Abstract: No abstract text available
Text: ELECTRONIC PRESSURE SWITCHES WITH DIGITAL DISPLAY PSW32 Series PSW31 Series Digital Hydraulic Switch Digital Pneumatic Switch PSW30 series pressure switches are electronic devices for pressure monitoring. The switches consist essentially of an integral pressure sensor, microprocessor evaluation circuitry,
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PSW32
PSW31
PSW30
PSW32
PSW31
PSW30
PSW32)
PSW31B
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diagram wiring mitsubishi elevator
Abstract: FR-D740-012 mitsubishi MODBUS RTU FR-D740-036 FR-D740-120 FR-D700 mitsubishi motor SF-HRCA FR-BSF01 MITSUBISHI INVERTER FR-D720S
Text: FR-D700-EC INVERTER IB NA -0600353ENG-C (0804)MEE Printed in Japan Specifications subject to change without notice. INSTRUCTION MANUAL HEAD OFFICE: TOKYO BUILDING 2-7-3, MARUNOUCHI, CHIYODA-KU, TOKYO 100-8310, JAPAN C INVERTER FR-D700 INSTRUCTION MANUAL FR-D740-012 to 160 - EC
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FR-D700-EC
FR-D700
FR-D740-012
FR-D720S-008
-0600353ENG-C
FR-D700
diagram wiring mitsubishi elevator
mitsubishi MODBUS RTU
FR-D740-036
FR-D740-120
mitsubishi motor SF-HRCA
FR-BSF01
MITSUBISHI INVERTER
FR-D720S
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82801IBM
Abstract: diode AH44 82801ibm ich9m Socket 478 VID pinout intel mvp-6 T3500
Text: Intel Celeron® Mobile Processor Dual-Core on 45-nm Process Datasheet For Platforms Based on Mobile Intel® 4 Series Express Chipset Family September 2009 Document Number: 321111-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
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45-nm
82801IBM
diode AH44
82801ibm ich9m
Socket 478 VID pinout
intel mvp-6
T3500
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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RCA-CD4007
Abstract: No abstract text available
Text: ¿ o c lO è Types CM OS Dual Complementary Pair Plus Inverter H ig h -V o lta g e T y p e s 2 0 - V o lt R a tin g The RCA-CD4007UB types are comprised o f three n-channel and three p-channel enhancem ent-type MOS transistors. The transistor elements are accessible through the package
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RCA-CD4007UB
CD4007UB
14-lead
14-lMENSIONS
RCA-CD4007
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Untitled
Abstract: No abstract text available
Text: HE WLETT-PACKARD/ CMPNTS blE J> m H4475ß4 Q4D • H P A INA-03100 H EW LETT PACKARD M agIC Low Noise, Cascadable Silicon Bipolar MMIC Am plifier Chip Outline^ Features • • • • • • Q010D25 Cascadable 50 ft Gain Block Low Noise Figure: 2.5 dB typical at 1.5 GHz
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H4475Ã
INA-03100
Q010D25
INA-03100
minimu19
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bd7995
Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND
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8366IT
STR910A
B26000
B26050
B2G010
B26010
B2701D
9SM102/V4T7
bd7995
P8243
178M15
transistor b492
TRANSISTOR BJ 131-6
P8035
sk 7443
1334 diode
LM1456
LM 8361
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HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2
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PF0025
PF0026
NMT900,
PF0027
PF0030
PF0031
NMT900
PF0032
PF0040
PF0042
HG62G
HG71G154
hg62g051
HG62G019
HG71G063
HG71G
HG71G030
HG62g014
HG51B
HG62G035
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L66C
Abstract: C1f TRANSISTOR ECG906 transistor HJ 388 MAC15
Text: E C G INC PHILIPS 17 E D • bL.S3‘iSfl O D O a S T I ECG906 DUAL HIGH-FREQUENCY DIFFERENTIAL AMPLIFIER semiconductors For Low-Power Applications at Frequencies up to 500 MHz •32O 0 - ^ ECG906 conilsts o f two Independent differential amplifiers w ith associated constant-current tran
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ECG906
6CQ906
T-74-09-01
ECG906
L66C
C1f TRANSISTOR
transistor HJ 388
MAC15
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Untitled
Abstract: No abstract text available
Text: TC58V16BFT TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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TC58V16BFT
TC58V16
264-byte,
264-byte
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V16BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. Tne device is organized as 264 byte X
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TC58V16BFT
TC58V16
264-byte,
264-byte
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5816BFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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TC5816BFT
TC5816
264-byte,
264-byte
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PHOTO TRANSISTOR 940nm
Abstract: transistor h44
Text: EV/ERJUGHT IS09001 QS9000 APPROVED General Purpose Photo Interrupter ITR8402 Features: Package Dimensions: IR: • LOW FORWARD VOLTAGE. • PEAK WAVELENGTH Xp=940nm. • HIGH RADIANT POWER AND HIGH RADIANT INTENSITY. • HIGH RELIABILITY. 14.0+0.2 • HIGH SENSITIVITY.
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IS09001
QS9000
ITR8402
940nm.
ITR8402
PHOTO TRANSISTOR 940nm
transistor h44
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