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    TRANSISTOR H5551 Search Results

    TRANSISTOR H5551 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR H5551 Datasheets Context Search

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    H5551

    Abstract: 625MW transistor H5551
    Text: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 █ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc max =625mW █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 T stg ——Storage Temperature………………………… -55~150℃


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    PDF H5551 625mW 10AIC 100MHz H5551 625MW transistor H5551

    transistor 5551

    Abstract: H5551 2N5551
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 5551 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:C043BJ-01 芯片厚度:240±20µm 管芯尺寸:430x430µm 2 焊位尺寸:B 极 107×107µm2,E 极 101×101µm2


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    PDF 100mm C043BJ-01 2N5551H5551 625mW 600mA 120VIE 10mAIB 50mAIB transistor 5551 H5551 2N5551

    transistor 5551

    Abstract: C046AJ-00 H5551 2N5551 PC625 2N5551H5551
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 5551 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:C046AJ-00 芯片厚度:240±20µm 管芯尺寸:460x460µm 2 焊位尺寸:B 极 110×110µm 2;E 极 110×110µm 2


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    PDF 100mm C046AJ-00 2N5551H5551 625mW 600mA 120VIE 10mAIB 50mAIB transistor 5551 C046AJ-00 H5551 2N5551 PC625 2N5551H5551