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    TRANSISTOR H8050 Search Results

    TRANSISTOR H8050 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR H8050 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    H8050

    Abstract: H8050 equivalent
    Text: H8050 Shantou Huashan Electronic Devices Co.,Ltd. █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃


    Original     		PDF H8050 E00mA 800mA 800mA, 800mA 100AIE 100AIC H8050 H8050 equivalent

    H8050

    Abstract: transistor ss8050 SS8050 ss8050 TRANSISTOR transistor TO-92 SS8050 Transistor h8050 h8050 transistor Transistor 25V 1.5A, 1W H8050 equivalent NPN Transistor TO92 25v
    Text: NPN 汕头华汕电子器件有限公司 SILICON H8050 █ 主要用途 TRANSISTOR 对应国外型号 SS8050 █ 外形图及引脚排列 作便携式收音机 B 类推挽输出 2W 放大。 █ 极限值（Ta=25℃） TO-92 T stg ——贮存温度………………………………… -55~150℃


    Original     		PDF H8050 SS8050 100mA 800mA 800mA, 800mA 100AIE 100AIC H8050 transistor ss8050 SS8050 ss8050 TRANSISTOR transistor TO-92 SS8050 Transistor h8050 h8050 transistor Transistor 25V 1.5A, 1W H8050 equivalent NPN Transistor TO92 25v

    TRANSISTOR 8050

    Abstract: H8050 S8050 hFE 8050 transistor NPN TO-92 Vebo6v
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 8050 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C060AJ-00 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2


    Original     		PDF 100mm C060AJ-00 S8050H8050 35VIE 100mA 800mA 800mAIB 10VIC TRANSISTOR 8050 H8050 S8050 hFE 8050 transistor NPN TO-92 Vebo6v

    8050L

    Abstract: S8050 transistor NPN TO-92 Vebo6v s8050h
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 8050L 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C065BJ-00 芯片厚度：240±20µm 管芯尺寸：650x650µm 2 焊位尺寸：B 极 105×105µm 2；E 极 105×105µm 2


    Original     		PDF 8050L 100mm C065BJ-00 S8050H8050L 35VIE 100mA 800mA 800mAIB 10VIC 8050L S8050 transistor NPN TO-92 Vebo6v s8050h

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    LDTA143YLT1G

    Abstract: L8050QLT1G copper wire L8050HQLT1G L8550QLT1G L9012RLT1G list of transistor LDTC144EKALT1G LDTC114WLT1G LDTA143XLT1G
    Text: LESHAN RADIO COMPANY, LTD. Ver.A PRODUCT/PROCESS CHANGE NOTIFICATION TO CUSTOMER PCN Number: LNC 100401 PCN Issue Date: 25th Apr' 2010 Contact: Contact your local LRC Sales Office Phone: Change Title: Copper Wire replacing Gold Wire in the SOT23 Packages Contact your local LRC Sales


    Original     		PDF LDTC114YLT1G LDTC115ELT1G LDTC115GLT1G LDTC115TLT1G LDTC123ELT1G LDTC123JLT1G LDTC123TLT1G LDTC123YLT1G LDTC124ELT1G LDTC124GLT1G LDTA143YLT1G L8050QLT1G copper wire L8050HQLT1G L8550QLT1G L9012RLT1G list of transistor LDTC144EKALT1G LDTC114WLT1G LDTA143XLT1G

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009