rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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transistor h9
Abstract: H9 sot 23 H9 transistor marking LDTC124GLT1G H922
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTC124GLT1G
OT-23
transistor h9
H9 sot 23
H9 transistor marking
LDTC124GLT1G
H922
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H9 transistor marking
Abstract: LDTC124GWT1G transistor h9 MARKING H9 h922 h9 MARKING
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTC124GWT1G
H9 transistor marking
LDTC124GWT1G
transistor h9
MARKING H9
h922
h9 MARKING
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RN1910FS
Abstract: RN1911FS RN2910FS RN2911FS
Text: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN2910FS
RN2911FS
RN2910FS,
RN1910FS
RN1911FS
RN1911FS
RN2911FS
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Untitled
Abstract: No abstract text available
Text: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FS,RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 package. C B fS6 E Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
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RN2910FS
RN2911FS
RN1910FS,
RN1911FS
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Untitled
Abstract: No abstract text available
Text: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN2910FS
RN2911FS
RN2910FS,
RN1910FS
RN1911FS
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RN2911FS
Abstract: RN1910FS RN1911FS RN2910FS H9 transistor marking
Text: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications C B 2 5 3 4 +0.02 0.48 -0.04 Equivalent Circuit and Bias Resistor Values
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RN2910FS
RN2911FS
RN2910FS,
RN1910FS
RN1911FS
RN2911FS
RN1911FS
H9 transistor marking
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Untitled
Abstract: No abstract text available
Text: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 5 3 4 0.48 C B 2 +0.02 -0.04 Equivalent Circuit and Bias Resistor Values
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RN2910FS
RN2911FS
RN2910FS,
RN1910FS
RN1911FS
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Application Notes
Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
Text: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the
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transistor h9
Abstract: PIMH9
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PIMH9 NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Product specification 2001 Sep 13 Philips Semiconductors Product specification NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ
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M3D302
SCA73
613514/01/pp8
transistor h9
PIMH9
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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transistor 2n5038
Abstract: 2N5038
Text: Data Sheet No. 2N5038 Generic Part Number: 2N5038 Type 2N5038 Geometry H9352 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/439 Features: • General-purpose high power transistor for use in high speed switching applications. • Housed in TO-3 case.
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2N5038
H9352
MIL-PRF-19500/439
MIL-PRF-19500/439
transistor 2n5038
2N5038
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h935
Abstract: No abstract text available
Text: Data Sheet No. 2N5039 Generic Part Number: 2N5039 Type 2N5039 Geometry H9352 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/439 Features: • General-purpose high power transistor for use in high speed switching applications. • Housed in TO-3 case.
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2N5039
H9352
MIL-PRF-19500/439
MIL-PRF-19500/439
h935
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2SC763
Abstract: 2SC763 C 2SC7
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC763 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCANGE, APPLICATION SIUCON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC763 is a silicon NPN epitaxial type transistor designed for high frequency amplify of FM radio tuner application.
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2SC763
2SC763
470MHz
100MHz)
SC-43
2SC763 C
2SC7
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BUK474-600B
Abstract: No abstract text available
Text: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 BUK474-600B PowerMOS transistor SbE D PHILIPS INTERNATIONA GENERAL DESCRIPTION N -channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope.
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BUK474-600B
DMML24
OT186A
BUK474-600B
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BUF644
Abstract: B12-B1 buf644 transistor
Text: Tem ic BUF644 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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BUF644
D-74025
18-Jul-97
BUF644
B12-B1
buf644 transistor
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MARKING CODE ht9
Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking
Text: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2
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SCA64
15002/00/01/pp8
MARKING CODE ht9
MARKING ht9 sot363
h9 marking
OT363
SOT363 marking code H9
transistor h9
MARKING HT9
SC88 SOT363 plastic package Ht9 MARKING CODE
hT9 marking
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B12-B1
Abstract: No abstract text available
Text: T e m ic BUF744 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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BUF744
D-74025
18-Jul-97
B12-B1
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I PS/DISCRETE bbS3131 00E0S7Q fi E5E D BUK427-450B PowerMOS transistor r - 3<3-ii G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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bbS3131
00E0S7Q
BUK427-450B
427-450B
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TRANSISTOR MARKING 707
Abstract: H9 transistor marking transistor h9
Text: UMH9N IMH9A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH9N and IMH9A; H9 • • • UMH9N (UMT6) 2.0+0.2 1,3±0.1 ,i. 3 i j 2 :p i 1 I
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SC-74)
DTC114YKA)
SC-70)
SC-59)
TRANSISTOR MARKING 707
H9 transistor marking
transistor h9
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