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    TRANSISTOR HFE CLASSIFICATION MARKING CE Search Results

    TRANSISTOR HFE CLASSIFICATION MARKING CE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR HFE CLASSIFICATION MARKING CE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1132

    Abstract: 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q
    Text: 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE


    Original     		2SB1132 OT-89 2SB1132-P 2SB1132-Q 2SB1132-R -100mA -500mA, -50mA -50mA, 2SB1132 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y


    Original     		KSC2881 120MHz KSA1201 OT-89 KSC2881 PDF

    SOT89 MARKING CODE B2

    Abstract: KSC2881 KSA1201
    Text: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y


    Original     		KSC2881 120MHz KSA1201 OT-89 KSC2881 SOT89 MARKING CODE B2 KSA1201 PDF

    transistor 1203

    Abstract: No abstract text available
    Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSA1203 KSA1203 KSC2883 OT-89 KSA1203OTF KSA1203YTF transistor 1203 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2883 NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSC2883 KSC2883 KSA1203 OT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		KSA1201 -120V 120MHz KSC2881 OT-89 KSA1201 PDF

    transistor B3 OF

    Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
    Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSC2883 KSA1203 OT-89 KSC2883 transistor B3 OF B3 transistor KSA1203 B3 marking transistor PDF

    B3 transistor

    Abstract: KSA1203 KSC2883
    Text: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSA1203 KSC2883 OT-89 KSA1203 B3 transistor KSC2883 PDF

    TRANSISTOR marking ar code

    Abstract: KSA1201 KSC2881
    Text: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		KSA1201 -120V 120MHz KSC2881 OT-89 KSA1201 TRANSISTOR marking ar code KSC2881 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		KSC2883 KSA1203 OT-89 KSC2883 PDF

    KSC2982

    Abstract: No abstract text available
    Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking


    Original     		KSC2982 OT-89 KSC2982 PDF

    MARKING CODE B3 sot-89

    Abstract: MY sot-89 NPN medium power transistor in a SOT package
    Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking


    Original     		KSC2982 KSC2982 OT-89 KSC2982ATF KSC2982BTF KSC2982CTF KSC2982DTF MARKING CODE B3 sot-89 MY sot-89 NPN medium power transistor in a SOT package PDF

    C1008Y TRANSISTOR

    Abstract: c1008y C1008YC transistor BU 102 KSC1008 NPN transistor to-92 "high gain" C1008O NPN transistor 500ma TO-92 KSA708 KSC1008C
    Text: KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW TO-92 • Suffix “-C” means Center Collector 1.Emitter 2.Collector 3.Base


    Original     		KSC1008 700mA 800mW KSA708 KSC1008C KSC1008 C1008Y TRANSISTOR c1008y C1008YC transistor BU 102 NPN transistor to-92 "high gain" C1008O NPN transistor 500ma TO-92 KSA708 KSC1008C PDF

    C1008Y TRANSISTOR

    Abstract: 92/TP218 transistor KSC1008
    Text: KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : CI =700mA • Collector Power Dissipation : PC=800mW • Suffix “-C” means Center Collector 1.Emitter 2.Collector 3.Base


    Original     		KSC1008 700mA 800mW KSA708 KSC1008C KSC1008 C1008Y TRANSISTOR 92/TP218 transistor PDF

    transistor c1009

    Abstract: c1009 c1009 transistor KSA709 KSC1009
    Text: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base


    Original     		KSC1009 700mA 800mW KSA709 KSC1009 KSC1009CYBU KSC1009CYTA KSC1009GBU KSC1009GTA transistor c1009 c1009 c1009 transistor PDF

    A709 transistor

    Abstract: a709 fairchild a709 KSA709CGBU KSA709
    Text: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		KSA709 -160V 800mW KSC1009 KSA709 KSA709CGBU KSA709CGTA KSA709COBU KSA709COTA A709 transistor a709 fairchild a709 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor


    Original     		KSC2881 120MHz KSA1201 OT-89 250mm2x0 KSC2881YTF KSC2881OTF OT-89 PDF

    sot-89 marking H3

    Abstract: No abstract text available
    Text: KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board Complement to KSC2881 SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor


    Original     		KSA1201 -120V 120MHz KSC2881 OT-89 250mm2 OT-89 sot-89 marking H3 PDF

    2SC2411KPT

    Abstract: 2SC2411KP
    Text: CHENMKO ENTERPRISE CO.,LTD 2SC2411KPT SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(I C=500mA)


    Original     		2SC2411KPT OT-23) 500mA) 200mW OT-23 2SC2411KPT 2SC2411KP PDF

    transistor marking 12w

    Abstract: No abstract text available
    Text: KSC2883 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SOT-89 • 3W Output Application • Collector Dissipation Pc=1-2W: Mounted on Ceramic Board • Complement to KSA1203 ABSOLUTE MAXIMUM RATINGS TA=25t; Symbol Characteristic Collector-Base Voltage


    OCR Scan     		KSC2883 KSA1203 OT-89 transistor marking 12w PDF

    Untitled

    Abstract: No abstract text available
    Text: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER SOT-89 • • • • Collector-Emitter Voltage VCEo= -1 2 0 V fT= 120MHz Collector Dissipation Pc= 1 -2 W : Mounted on Ceramic Board Complement to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic


    OCR Scan     		KSA1201 OT-89 120MHz KSC2881 250mm2x 0024b64 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2982 STROBE FLASH MEDIUM POWER AMPLIFIER SOT-89 • Excellent hFE Linearity: h F E i = 140~600 • Low Collector-Emitter Saturation Voltage: Vce sat = 0.5V • Collector Dissipation Pc =1 ~2W: Mounted on Ceramic Board ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		KSC2982 OT-89 002402b PDF

    23 marking

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3876 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=6V , • Complementary to KTA1505. Ic=400mA. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		KTC3876 KTA1505. 400mA. 10/--ank 100mA, 100mA 25Min. 40Min. 400mA 23 marking PDF

    KTA1505S

    Abstract: KTC3876S
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3876S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=6V , • Complementary to KTA1505S. Ic=400mA. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		KTC3876S 40QmA. KTA1505S. OT-23 100mA 400mA 100mA, 25Min. 40Min. KTA1505S KTC3876S PDF