foto sensor
Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
Text: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor
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GPXY6052
foto sensor
optical interrupter darlington
gabellichtschranke
datasheet ic 4060
Fototransistor
Q62702-P5263
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foto sensor
Abstract: Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter
Text: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor
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GPX06992
foto sensor
Fototransistor
opto counter
Opto Interrupter slotted
1/IRF 9330
gabellichtschranke
Q62702-P5263
w 9330
opto sensor counter
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ITR8307
Abstract: No abstract text available
Text: Technical Data Sheet OPTO INTERRUPTER ITR ITR8307 Features Fast response time High sensitivity Cut-Off visible wavelength Thin Compact Pb free Descriptions ITR8307 is a light reflection switch which includes a GaAs IR-LED transmitter and a NPN photo-transistor with a high photosensitive
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ITR8307
ITR8307
DRX-083-025
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PW-240D
Abstract: No abstract text available
Text: DATA SHEET D-105 KBPW-240D PWM DC MOTOR SPEED CONTROL NEMA-4X / IP-65 For PM and Shunt Motors Rated: 1/50 – 3/4 HP SCR , 1 HP (PWM) @ 115 VAC 1/25 – 11⁄2 HP (SCR), 2 HP (PWM) @ 230 VAC Model KBPW-240D KB Part No. 8401 (Black Case) KB Part No. 8402 (White Case)
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D-105
KBPW-240D
IP-65
A42102)
PW-240D
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Untitled
Abstract: No abstract text available
Text: DATA SHEET D-105 KBPW-240D PWM DC MOTOR SPEED CONTROL NEMA-4X / IP-65 For PM and Shunt Motors Rated: 1/50 – 3/4 HP SCR , 1 HP (PWM) @ 115 VAC 1/25 – 11⁄2 HP (SCR), 2 HP (PWM) @ 230 VAC Model KBPW-240D KB Part No. 8401 (Black Case) KB Part No. 8402 (White Case)
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D-105
KBPW-240D
IP-65
A42102)
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IC 3130
Abstract: 4110 P525 Q62702-P5250 GEOY6976
Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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Untitled
Abstract: No abstract text available
Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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Q62702-P5250
suita10
GEOY6976
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IC 3130
Abstract: Q62702-P5250 of ic 3130 SFH3130F GEO06976 4110 opto
Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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E00386
OHF00383
GEO06976
IC 3130
Q62702-P5250
of ic 3130
SFH3130F
GEO06976
4110 opto
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CQM1H-CPU51 DIP SWITCH setting omron
Abstract: CQM1H-CPU21 CQM1-PA216 CQM1-PA203 CQM1-ID212 CQM1-OD212 Omron CQM1H-CPU21 CQM1H-CPU51 DIP SWITCH configuration CQM1-OC222 CQM1-PA206
Text: Programmable Controller CQM1H The CQM1H’s rack-less modular design lets you customize your control system by adding “inner boards” for advanced functions, as well as specialized I/O and communications modules. CQM1H offers the most flexibility of all PLC systems in its class.
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CQM1-OD213
CQM1-OA221
CQM1-OD215
CQM1-OA222
CQM1-OD216
CQM1H-CPU51 DIP SWITCH setting omron
CQM1H-CPU21
CQM1-PA216
CQM1-PA203
CQM1-ID212
CQM1-OD212
Omron CQM1H-CPU21
CQM1H-CPU51 DIP SWITCH configuration
CQM1-OC222
CQM1-PA206
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HVR-1X 7 diode
Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01EC0
TM1061S-L
TM1061S-R
TM1241S-L
TM1241S-R
TM1261S-L
TM1261S-R
TM1641P-L
TM1641S-L
TM1661P-L
HVR-1X 7 diode
STR80145
SE135N
hvr 1X 3 diode
semiconductor STR 20005
sk a 3120c
SE110N
ux-c2b equivalent
transistor CS 9012 PNP
STR83159
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Untitled
Abstract: No abstract text available
Text: INSTALLATION AND OPERATION MANUAL MODEL KBPW-240D KB Part No. 8401 Black Case • Part No. 8402 (White Case) NEMA 4X, IP-65 PWM DC Motor Speed Control For PM and Shunt Wound Motors Rated 7.5 Amps DC, 11.5 Amps AC @ 115/230 VAC ON STOP OL PENTA-DRIVE PWM DC MOTOR SPEED CONTROL
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KBPW-240D
IP-65
A40360)
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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PHOTO TRANSISTOR 940nm
Abstract: "photo transistor" PHOTO TRANSISTOR ITR9811 ITR9811-B dual infrared transistor 9811-b
Text: EVERLIGHT ELECTRONICS CO ,LTD. Device Number:DRX-811-078 REV:1.1 Ecn: Page:1of5 MODEL NO:ITR9811-B DIMENSIONS : 1.UNIT:mm. 2.GENERAL TOLERANCE ± 0.2mm. FOR ITR9811-B TEST PART,OUTPUT INTENSITY IS MEASURED INDIRECTLY BY MEASURING THE EMITTER CURRENT.THE PARTS ARE 6mm APART LEAD TO LEAD;SUCH AS FIG.4 .LED TEST CURRENT IS 4.0mA,
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DRX-811-078
ITR9811-B
ITR9811-B
22Lines)
ITR9811
9811-B
PHOTO TRANSISTOR 940nm
"photo transistor"
PHOTO TRANSISTOR
dual infrared transistor
9811-b
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TRANSISTOR 077
Abstract: dual infrared transistor photo transistor "photo transistor" dual infrared diode PHOTO TRANSISTOR 940nm ITR9811 ITR9811-C
Text: EVERLIGHT ELECTRONICS CO ,LTD. Device Number:DRX-811-077 REV:1.1 Ecn: Page:1of5 MODEL NO:ITR9811-C DIMENSIONS : 1.UNIT:mm. 2.GENERAL TOLERANCE ± 0.2mm. FOR ITR9811-C TEST PART,OUTPUT INTENSITY IS MEASURED INDIRECTLY BY MEASURING THE EMITTER CURRENT.THE PARTS ARE 6mm APART LEAD TO LEAD;SUCH AS FIG.4 .LED TEST CURRENT IS 4.0mA,
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DRX-811-077
ITR9811-C
ITR9811-C
22Lines)
ITR9811
9811-C
TRANSISTOR 077
dual infrared transistor
photo transistor
"photo transistor"
dual infrared diode
PHOTO TRANSISTOR 940nm
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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8-Lead TO-99 Package
Abstract: No abstract text available
Text: F A IR C H IL D S E M IC O N D U C T O R www.fairchildsemi.com tm L M 1 08A/LH21 08A P r e c is io n O p e r a t i o n a l Am plifiers Features Description • • • • • • • • • The LM108A operational amplifiers features low input bias current combined with the advantages of bipolar transistor
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8A/LH21
MIL-STD-883B
LM108A
8-Lead TO-99 Package
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D S E M IC O N D U C T O R www.fairchildsemi.com tm L M 1 08A/LH21 08 A P r e c is io n O p e r a t i o n a l Am plifiers Features Description • • • • • • • • • The LM108A operational amplifiers features low input bias current combined with the advantages of bipolar transistor
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8A/LH21
MIL-STD-883B
LM108A
DS3000108A
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BUX53
Abstract: transistor c 839 P6021 TRANSISTOR 841
Text: BUX 53 NPN S ILIC O N T R A N S I S T O R , T R I P L E D I F F U S E D M E S A T R A N S IS T O R N P N S IL IC I U M , M E S A T R I P L E D I F F U S E T E N TA T IV E D A TA N O T IC E P R O V IS O IR E Driver stage fo r high voltage power transistor Etage p ilo te p o u r tran sistor de puissance
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P6021
BUX53
transistor c 839
TRANSISTOR 841
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VK-211
Abstract: sd1415 thomson microwave transistor thomson rf power transistor
Text: S G S —THOMSON OMC D | 7^ 237 □DOGOS'l 7 | O ^^3-/3 ~~r\ SOHO STATE MICROWAVE SD1415 THOMSONCSF COMPONENTS CORPORATION Montgomeryville, PA 18936 • {215 855-8400 ■ TWX 510-661-7299 VHF CO M M UNICATIONS TRANSISTOR DESCRIPTION SSS device type SD1415 is a 12.5 volt epitaxial silicon NPN planar
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SD1415
SD1415
VK211/07-3B
3M-K-6098
VK-211
thomson microwave transistor
thomson rf power transistor
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IS09001
Abstract: H-33 H-35 ITR8307 h33 diode
Text: eVERJLIGKT IS09001 QS9000 APPROVED Subminiature High Sensitivity Photo Interrupter ITR8307 Features: ITR: • FAST RESPONSE TIME. • HIGHLY ANALYTICAL • CUTTING WAVELENGTH A.p=840nm. • THIN. • COMPACT. Package Dimensions: LO <=> Cc\iO ^ -!- 1-1
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IS09001
QS9000
ITR8307
840nm.
ITR8307
CO307
Ta-25Â
H-33
H-35
h33 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: j » mfRFProcfcjcfs ftp products M ic m s e -m * 140 C o m m e rc e Drive m M o m g e n « « ^ ^ , p a 18936 - 10 « Tel: 215 6 3 1-9 840 A a w w sK i ô y Tiwfiw arotyy i c m <f ì A « O U I 4 U Ü -4 RF & MICROWAVE TRANSISTORS 860-900MHZ CLASS C, BASE STATIONS
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860-900MHZ
FREQUEMCYB75MHZ
S01480-P
SD1400-02
SD1400-2
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PDF
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2N5016
Abstract: transistor 2n5016 att1100 multi-emitter transistor
Text: s G S—THOMSON Q4C D | 7=12^37 Q0GQ120 b ”J ~ *f ° SOLID STATE MICROWAVE 2N5016 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviìie, P A 18936 • 215 855-8400 » TWX 510-661-7299 1 . VHF-UHF SILICON NPN POWER TRANSISTOR DESCRIPTION: The SSS 2N5016 is a silicon epitaxial NPN planar transistor which
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Q0GQ120
2N5016
2N5016
700mHz.
transistor 2n5016
att1100
multi-emitter transistor
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PDF
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UL26
Abstract: No abstract text available
Text: mm jmmRF Prnmtc-* m Microsemi »ANWW fiÿ Wiwiiiiiÿx 140 C o m m e rc e D riv e M o n tg o m e ry v ille , PA 18936-10 13 Tel: {2 1 5> 6 3 1-9 840 S D 1 2 2 4 -2 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS CLASS C TRANSÌSTOR FRE-QUFtNCY 175MH z
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152MHz
175MH
SD1ffi40?
SD1224-S
11S136MHz
200iftA
UL26
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PDF
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Untitled
Abstract: No abstract text available
Text: >: >:->:
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RF2105L
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PDF
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